A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.
1. A display unit comprising:
a first substrate provided with a display region and a peripheral region outside the display region;
a transistor provided in the display region on the first substrate, the transistor including a semiconductor layer, a gate electrode that faces the semiconductor layer, a gate insulating film located between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer;
a first wiring layer provided in the peripheral region on the first substrate, the first wiring layer being electrically coupled to the transistor and being disposed at a position closer to the first substrate than a position in same layer as the gate electrode and the source-drain electrode of the transistor;
a second wiring layer provided on the first substrate and in the peripheral region, the second wiring layer having an electric potential that is different from an electric potential of the first wiring layer; and
an insulating film provided between the second wiring layer and the first wiring layer.
2. The display unit according to claim 1 , wherein the first wiring layer has a thickness that is smaller than each of a thickness of the gate electrode and a thickness of the source-drain electrode.
3. The display unit according to claim 1 , further comprising a connection wiring layer that is provided in the same layer as the gate electrode or the source-drain electrode, and is electrically coupled to the first wiring layer.
4. The display unit according to claim 1 , further comprising a display element provided in the display region on the first substrate, the display element including a first electrode, an organic layer, and a second electrode.
5. The display unit according to claim 1 , wherein the transistor includes, in order from a position close to the first substrate, the semiconductor layer, the gate insulating film, the gate electrode, and the source-drain electrode.
6. The display unit according to claim 5 , wherein the insulating film includes a first insulating film that covers the first wiring layer, and a second insulating film that is provided between the gate electrode and the source-drain electrode, the second insulating film extending to the peripheral region.
7. The display unit according to claim 6 , further comprising an organic insulating film that is provided between the gate electrode and the source-drain electrode and is stacked on the second insulating film, the organic insulating film extending to the peripheral region.
8. The display unit according to claim 7 , wherein the organic insulating film has a groove in the peripheral region, and the second wiring layer is provided in the groove.
9. The display unit according to claim 5 , wherein the insulating film includes a first insulating film that covers the first wiring layer, and the gate insulating film.
10. The display unit according to claim 1 , further comprising:
a sealing section that is provided in the peripheral region on the first substrate and surrounds the display region; and
a second substrate that faces the first substrate, with the sealing section being interposed therebetween.
11. The display unit according to claim 10 , wherein the first wiring layer is provided to face the sealing section.
12. The display unit according to claim 1 , wherein the first wiring layer extends in a direction orthogonal to the second wiring layer.
13. The display unit according to claim 1 , wherein the semiconductor layer includes an oxide semiconductor material.
14. The display unit according to claim 1 , further comprising an additional electrode that faces the semiconductor layer and is provided in same layer as the first wiring layer, the additional electrode being electrically coupled to one of the gate electrode and the source-drain electrode.
15. The display unit according to claim 1 , wherein the first wiring layer includes one or more of molybdenum, titanium, tungsten, and copper.
16. A display unit comprising:
a first substrate provided with a display region and a peripheral region outside the display region;
a transistor provided in the display region on the first substrate, the transistor including a semiconductor layer, a gate electrode that faces the semiconductor layer, a gate insulating film located between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer;
a first wiring layer provided in the peripheral region on the first substrate, the first wiring layer being electrically coupled to the transistor and being disposed at a position closer to the first substrate than a position in same layer as the gate electrode and the source-drain electrode of the transistor;
a second wiring layer provided on the first substrate and in the peripheral region, the second wiring layer having an electric potential that is different from an electric potential of the first wiring layer;
an insulating film provided between the second wiring layer and the first wiring layer; and
a storage capacitor that includes a pair of electrodes, one of the pair of electrodes being provided in same layer as the first wiring layer.