Semiconductor memory device
A semiconductor memory device according to one embodiment includes: a memory cell, the memory cell including a ferroelectric film; and a control circuit controlling the memory cell. Additionally, the control circuit determining whether the number of times of executions of a write process or an erase process on the memory cell has reached a predetermined number of times; and, if the number of times of executions has reached the predetermined number of times, executing a voltage application process in which a first voltage of a first polarity and a second voltage of a second polarity opposite to the first polarity are applied to the ferroelectric film.
1. A semiconductor memory device, comprising:
a memory cell including a ferroelectric film, and
a control circuit controlling the memory cell,
the control circuit
determining whether a number of times of executions of a write process or an erase process on the memory cell is a multiple of a predetermined integer, and
if the number of times of executions is a multiple of the predetermined integer, executing, a voltage application process in which a first voltage of a first polarity and a second voltage of a second polarity opposite to the first polarity are applied to the ferroelectric film.
2. The semiconductor memory device according to claim 1 ,
the control circuit comprising a memory holding the number of times of executions,
the control circuit
updating the number of times of executions in the memory in response to an execution of the write process or the erase process, and
referring to the memory at a time of determination of the number of times of executions.
3. The semiconductor memory device according to claim 1 ,
the ferroelectric film including hafnium (Hf) and oxygen (O) as main components, and, including at least one of silicon (Si), magnesium (Mg), aluminum (Al), barium (Ba), zirconium (Zr), gadolinium (Gd), lanthanum (La), samarium (Sm), nitrogen (N) and yttrium (Y) as additive.
4. A semiconductor memory device, comprising:
a memory cell including a ferroelectric film; and
a control circuit controlling the memory cell,
the control circuit
applying a voltage of a first polarity to the ferroelectric film in a write process,
applying a voltage of a second polarity opposite to the first polarity to the ferroelectric film in an erase process,
determining whether a number of times of executions of the write process or the erase process on the memory cell has reached a predetermined number of times, and
if the number of times of executions has reached the predetermined number of times,
executing a voltage application process in which a first voltage of the first polarity and a second voltage of the second polarity are applied to the ferroelectric film,
a magnitude of the first voltage being the same as or larger than a magnitude of a maximum voltage applied to the ferroelectric film in the write process, and
a magnitude of the second voltage being the same as or larger than a magnitude of a maximum voltage applied to the ferroelectric film in the erase process.
5. The semiconductor memory device according to claim 4 ,
the control circuit comprising a memory holding the number of times of executions,
the control circuit
updating the number of times of executions in the memory in response to an execution of the write process or the erase process, and
referring to the memory at a time of determination of the number of times of executions.
6. The semiconductor memory device according to claim 4 ,
the ferroelectric film including hafnium (Hf) and oxygen (O) as main components, and, including at least one of silicon (Si), magnesium (Mg), aluminum (Al), barium (Ba), zirconium (Zr), gadolinium (Gd), lanthanum (La), samarium (Sm), nitrogen (N) and yttrium (Y) as additive.
7. A semiconductor memory device, comprising:
a memory cell including a ferroelectric film, and
a control circuit controlling the memory cell, the control circuit
being capable of executing a write process, an erase process, a voltage application process, and an erase sequence in which data is erased from the memory cell, the erase sequence including at least one of the erase process or the voltage application process,
in the voltage application process, applying a first voltage of a first polarity and a second voltage of a second polarity opposite to the first polarity to the ferroelectric film,
determining whether a number of times of executions of the write process or the erase process on the memory cell has reached a predetermined number of times, and
if the number of times of executions has reached the predetermined number of times, in the erase sequence, executing the voltage application process in addition to or instead of the erase process.
8. The semiconductor memory device according to claim 7 ,
the control circuit comprising a memory holding the number of times of executions,
the control circuit
updating the number of times of executions in the memory in response to an execution of the write process or the erase process, and
referring to the memory at a time of determination of the number of times of executions.
9. The semiconductor memory device according to claim 7 ,
the ferroelectric film including hafnium (Hf) and oxygen (O) as main components, and, including at least one of silicon (Si), magnesium (Mg), aluminum (Al), barium (Ba), zirconium (Zr), gadolinium (Gd), lanthanum (La), samarium (Sm), nitrogen (N) and yttrium (Y) as additive.
10. A semiconductor memory device, comprising:
a memory cell including a ferroelectric film; and
a control circuit controlling the memory cell, the control circuit
determining whether a number of times of executions of a write process or an erase process on the memory cell has reached a predetermined number of times, and
if the number of times of executions has reached the predetermined number of times, executing a voltage application process in which a first voltage of a first polarity and a second voltage of a second polarity opposite to the first polarity are applied to the ferroelectric film after executing the erase process and before executing the write process.
11. The semiconductor memory device according to claim 10 ,
the control circuit comprising a memory holding the number of times of executions,
the control circuit
updating the number of times of executions in the memory in response to an execution of the write process or the erase process, and
referring to the memory at a time of determination of the number of times of executions.
12. The semiconductor memory device according to claim 10 ,
the ferroelectric film including hafnium (Hf) and oxygen (O) as main components, and, including at least one of silicon (Si), magnesium (Mg), aluminum (Al), barium (Ba), zirconium (Zr), gadolinium (Gd), lanthanum (La), samarium (Sm), nitrogen (N) and yttrium (Y) as additive.
13. A semiconductor memory device, comprising:
a memory cell including a ferroelectric film; and
a control circuit controlling the memory cell,
the control circuit
determining whether a number of times of executions of a write process or an erase process on the memory cell has reached a predetermined number of times, and
if the number of times of executions has reached the predetermined number of times, executing a voltage application process in which a first voltage of a first polarity and a second voltage of a second polarity opposite to the first polarity are alternately applied to the ferroelectric film a plurality of times.
14. The semiconductor memory device according to claim 13 ,
the control circuit comprising a memory holding the number of times of executions,
the control circuit
updating the number of times of executions in the memory in response to an execution of the write process or the erase process, and
referring to the memory at a time of determination of the number of times of executions.
15. The semiconductor memory device according to claim 13 ,
the ferroelectric film including hafnium (Hf) and oxygen (O) as main components, and, including at least one of silicon (Si), magnesium (Mg), aluminum (Al), barium (Ba), zirconium (Zr), gadolinium (Gd), lanthanum (La), samarium (Sm), nitrogen (N) and yttrium (Y) as additive.