METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL
A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer ( 228 ) on a metal layer ( 226 ) above a substrate. A phase-change material layer ( 230 ) is formed on the dielectric layer. A contact region ( 232 ) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.
1 . A method of forming a memory cell, the method comprising:
forming a selector device on a substrate;
forming a metal plug to couple to a contact of the selector device of the memory cell;
forming an oxygen-free layer on exposed portions of the metal plug to prevent oxidation of the metal plug;
forming a dielectric layer on the oxygen-free layer;
forming a phase-change material layer on the dielectric layer; and
forming a contact region disposed within the dielectric layer and between the phase-change material layer and the metal plug by
determining a set-state target current for the phase-change material layer, and
applying, through the metal plug, a current pulse greater than the set-state target current; and
subsequent to applying the current pulse greater than the set-state target current, making a determination of an actual amount of current driven by the phase-change memory cell in a crystalline state.