Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element
In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.
1. A method for fabricating contacts in an RF switch comprising a phase-change material (PCM) and a heating element approximately underlying an active segment of said PCM and extending outward and transverse to said PCM, the method comprising:
forming lower portions of PCM contacts for connection to passive segments of said PCM, wherein said passive segments extend outward and are transverse to said heating element;
forming upper portions of said PCM contacts from a lower interconnect metal;
forming heating element contacts cross-wise to said PCM contacts, said heating element contacts comprising a top interconnect metal and intermediate metal segments for connecting with terminal segments of said heating element.
2. The method of claim 1 , wherein said upper portions of said PCM contacts have an offset towards said active segment of said PCM.
3. The method of claim 1 , wherein said lower portions of said PCM contacts are formed from said lower interconnect metal.
4. The method of claim 1 , wherein prior to forming said upper portions of said PCM contacts the method further comprises:
planarizing said lower portions of said PCM contacts with a contact dielectric;
depositing a layer of said lower interconnect metal over said lower portions of said PCM contacts and said contact dielectric.
5. The method of claim 1 , further comprising performing an etch stop using a contact uniformity support layer over said passive segments of said PCM.
6. The method of claim 1 , further comprising:
etching first holes in an interconnect dielectric overlying said upper portions of said PCM contacts;
etching second holes in said interconnect dielectric and a contact dielectric overlying said terminal segments of said heating element.
7. The method of claim 1 , further comprising forming a nugget of thermally conductive and electrically insulating material on top of said heating element.
8. The method of claim 7 , wherein said nugget of thermally conductive and electrically comprises a material selected from the group consisting of AlN, Al X O Y , Be X O Y , SiC, Si X N Y , diamond, and diamond-like carbon.
9. The method of claim 1 , wherein said PCM comprises a material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.
10. A method for fabricating contacts in an RF switch comprising a phase-change material (PCM) and a heating element underlying said PCM, said method comprising:
forming a lower portion of a PCM contact for connection to said PCM;
forming an upper portion of said PCM contact from a lower interconnect metal;
forming a heating element contact, said heating element contact comprising a top interconnect metal and an intermediate metal segment for connecting with a terminal segment of said heating element.
11. The method of claim 10 , wherein said heating element approximately underlies an active segment of said PCM.
12. The method of claim 11 , wherein said upper portion of said PCM contact has an offset towards said active segment of said PCM.
13. The method of claim 10 , wherein said lower portion of said PCM contact is formed from said lower interconnect metal.
14. The method of claim 10 , wherein prior to forming said upper portion of said PCM contact said method further comprises planarizing said lower portion of said PCM contact with a contact dielectric.
15. The method of claim 14 , wherein said method further comprises depositing a layer of said lower interconnect metal over said lower portion of said PCM contact and said contact dielectric.
16. The method of claim 10 , further comprising performing an etch stop using a contact uniformity support layer over said PCM.
17. The method of claim 10 , further comprising forming a nugget of thermally conductive and electrically insulating material on top of said heating element.
18. The method of claim 17 , wherein said nugget of thermally conductive and electrically comprises a material selected from the group consisting of AN, Al X O Y , Be X O Y , SiC, Si X N Y , diamond, and diamond-like carbon.
19. The method of claim 10 , wherein said PCM comprises a material selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.