LASER DIODE ENHANCEMENT DEVICE
The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.
1 . The laser of claim 15 , the laser further including a DBR mirror and at least one quantum well in the DBR mirror.
2 . The laser of claim 1 , including a laser beam output that is back propagated for emitting a large sized Gaussian beam with high encircled energy.
3 . The laser of claim 1 , wherein the DBR mirror has a plurality of GaAs/AlGaAs layers.
4 . The laser of claim 1 wherein the quantum well is composed of AlGaAs/InGaAs.
5 . The laser of claim 14 wherein the CGH comprises GaAs/AlGaAs.
6 . (canceled)
7 . The laser of claim 14 wherein there are at least 20 cascaded CGHs.
8 . The laser of claim 14 wherein there are more than 20 cascaded CGHs.
9 . The laser of claim 14 where each CGH comprises GaAs/AlGaAs.
10 . (canceled)
11 . The laser of claim 15 having a laser gain medium that is semiconductor.
12 . The laser of claim 15 having a laser gain medium that is crystal.
13 . The laser of claim 15 having a laser gain medium that is gas.
14 . A vertical cavity surface emitting semiconductor laser, with an intra-cavity wavefront shaping device comprising a plurality of CGHs at one end of the cavity, with each CGH having a plurality of cascaded layers with a buffer layer between each cascaded layer.
15 . A vertical cavity surface emitting semiconductor laser, comprising a plurality of wavefront shaping devices, within a cavity said wavefront shaping devices being diffractive elements consisting of a plurality of interior CGHs at an end of the cavity; said CGHs each having a plurality of cascaded layers with a buffer layer between each layer.
16 . The device of claim 15 wherein the diffractive elements comprises 2-20 layers of AlGaAs with buffer layers of GaAs.