Temperature related error management

1. An apparatus, comprising:

an array of memory cells;

a write temperature indicator appended to at least one predetermined number of bytes of stored data in the array of memory cells; and

a controller comprising circuitry and configured to:

determine an error rate during a read of data stored in the array of memory cells;

determine a temperature difference between the write temperature indicator and a read temperature indicator; and

retire a number of memory cells associated with storage of the stored data when the determined error rate is at least equal to a stored retirement error threshold and the determined error rate exceeds an error rate expected at a stored temperature difference threshold.

2. The apparatus of claim 1 , wherein the apparatus is further configured to include a component to receive an ambient temperature measurement to enable storage of the read temperature indicator in a timeframe associated with a read of stored data.

3. The apparatus of claim 1 , wherein the apparatus is further configured to store, in the controller, a write temperature stamp for the at least one predetermined number of bytes of data, wherein the write temperature stamp indicates at least one of:

an ambient temperature range in a timeframe in which the data is written for storage; and

documentation of the timeframe in which the data is written for storage.

4. The apparatus of claim 1 , wherein the apparatus is further configured to sample ambient temperature sequentially in predetermined time increments to enable storage of the write temperature indicator to indicate an ambient temperature range in a timeframe in which the stored data is written.

5. The apparatus of claim 4 , wherein the apparatus is further configured to code subranges of a total temperature range for the write temperature indicator appended as auxiliary data to unused bits of the at least one predetermined number of bytes of the stored data.

6. The apparatus of claim 5 , wherein the subranges of the total temperature range are coded with a variable number of bits that define a granularity of the subrange relative to the total temperature range.

7. The apparatus of claim 1 , wherein the error rate is a raw bit error rate (RBER).

8. An apparatus, comprising:

a first component comprising circuitry to determine a raw bit error rate (RBER) during a read of data stored in an array of memory cells;

a second component comprising circuitry for receipt of an ambient temperature measurement in a timeframe associated with a read of the stored data;

a write temperature indicator appended as auxiliary data to at least one predetermined number of bytes of the stored data; and

a controller comprising circuitry and configured to:

determine a temperature difference between the write temperature indicator and a read temperature; and

refresh a number of memory cells associated with storage of the stored data when an RBER for a read is at least equal to a stored refresh error threshold and the RBER exceeds an RBER expected at a stored temperature difference threshold.

9. The apparatus of claim 8 , wherein the apparatus is further configured to store in a lookup table a plurality of temperature difference thresholds associated with a number of RBERs to be expected for a read at each temperature difference threshold.

10. The apparatus of claim 8 , wherein the apparatus is further configured to retire a number of memory cells associated with storage of the stored data when an RBER for a read is at least equal to a stored retirement error threshold and the RBER exceeds an RBER expected at a stored temperature difference threshold.

11. The apparatus of claim 8 , wherein the apparatus is further configured to not retire a number of memory cells associated with storage of the stored data when an RBER for a read is at least equal to a stored retirement error threshold and the RBER is less than or equal to an RBER expected at a stored temperature difference threshold.

12. The apparatus of claim 8 , wherein the apparatus is further configured to not refresh data from a number of memory cells associated with storage of the stored data when an RBER for a read is at least equal to a stored refresh error threshold and the RBER is less than or equal to an RBER expected at a stored temperature difference threshold.

13. A method for temperature related error management, comprising:

determining that an error rate for a read of stored data is at least equal to a stored threshold; and

determining that a temperature difference is at least equal to a temperature difference threshold, wherein the temperature difference is determined as a difference between a stored indicator of an ambient temperature in a timeframe in which the stored data was written and a received indicator of an ambient temperature in a timeframe in which the stored data is read;

performing a first error management operation to retire a number of memory cells associated with storage of the stored data when the error rate is at least equal to a stored retirement threshold and the error rate exceeds an error rate expected at a particular temperature difference threshold corresponding to the ambient temperature;

performing a second error management operation to not retire the number of memory cells when the error rate is at least equal to the stored retirement threshold and the error rate is less than or equal to the error rate expected at the particular temperature difference threshold corresponding to the ambient temperature;

performing a third error management operation to refresh the number of memory cells when the error rate is at least equal to a stored refresh error threshold and the error rate exceeds an error rate expected at a stored temperature difference threshold corresponding to the ambient temperature; and

performing a fourth error management operation to not refresh data from the number of memory cells when the error rate is at least equal to the stored refresh error threshold and the error rate is less than or equal to the error rate expected at a particular temperature difference threshold corresponding to the ambient temperature.

14. The method of claim 13 , including:

evaluating the number of memory cells associated with storage of the stored data by:

writing, in a particular ambient temperature range, new data for storage in the number of memory cells and reading, in the particular ambient temperature range, the stored new data to determine a new error rate; and

determining, when the new error rate is near a baseline error rate level, that read errors that contributed to being at least equal to the stored retirement threshold are due to the temperature difference.

15. The method of claim 13 , including determining particular memory cells to have auxiliary data with a write temperature indicator having a difference from the ambient read temperature indicator that corresponds to a particular read reference voltage adjustment in order to reduce the error rate to preempt determination of one of the first, second, third, and fourth error management operations.

16. The method of claim 13 , including updating read reference voltage adjustments in a lookup table to improve a preemption of determination of an error management operation.

17. The method of claim 13 , including appending a write temperature indicator as auxiliary data to at least one predetermined number of bytes of the stored data.

18. The method of claim 13 , including storing in a lookup table a plurality of temperature difference thresholds each associated with a read reference voltage to be applied in order to reduce read errors associated with a temperature difference induced shift in a voltage threshold for memory cells that store the data.

19. The method of claim 13 , including accessing a lookup table and applying, by a controller, a read reference voltage to preemptively reduce read errors associated with the temperature difference.

20. The method of claim 19 , wherein the applied read reference voltage differs from a read reference voltage suitable for a read at the temperature at which the stored data was written.