SOLID STATE STORAGE DEVICE AND DATA PROCESSING METHOD WHEN A POWER FAILURE OCCURS
A solid state storage device includes a buffer, a non-volatile memory and a control circuit. A write data is temporarily stored in the buffer. The non-volatile memory includes plural dies. The plural dies include respective first spaces as data storage areas. If an amount of the write data in the buffer does not reach a predetermined data amount when a power failure occurs, the control circuit performs a parity check process on the write data to generate a parity data. The control circuit stores the write data in the data storage areas of the plural dies. The control circuit stores the parity data and a position information in a system storage area of the non-volatile memory.
1 . A solid state storage device, comprising:
a buffer, wherein a write data is temporarily stored in the buffer;
a non-volatile memory comprising plural dies, wherein the plural dies comprise respective first spaces as data storage areas, and the data storage areas is divided into plural stripes; and
a control circuit connected with a host, the buffer and the non-volatile memory,
wherein if an amount of the write data in the buffer does not reach a predetermined data amount when a power failure occurs, the control circuit performs a parity check process on the write data to generate a parity data, wherein the control circuit stores the write data in the data storage areas of the plural dies and stores the parity data and a position information corresponding to the parity data in a system storage area of the non-volatile memory.
2 . The solid state storage device as claimed in claim 1 , wherein the position information indicates storage positions of the write data stored in the non-volatile memory.
3 . The solid state storage device as claimed in claim 1 , wherein the solid state storage device further comprises a voltage detector for detecting if the power failure occurs or if a supply voltage of the solid state storage device occurs an electrical brownout.
4 . The solid state storage device as claimed in claim 3 , wherein if the supply voltage of the solid state storage device drops to a specified voltage value, the voltage detector judges that the power failure occurs.
5 . The solid state storage device as claimed in claim 1 , wherein if a total amount of the write data and the parity data is lower than a stripe size, the control circuit judges that the amount of the write data does not reach the predetermined data amount.
6 . The solid state storage device as claimed in claim 1 , wherein the write data is stored in a first stripe corresponding to the data storage areas of the plural dies when the power failure occurs, wherein when the solid state storage device is powered on again to store a new data, the new data is firstly stored in the first stripe.
7 . The solid state storage device as claimed in claim 1 , wherein when the power failure occurs, the control circuit further generates a system data and stores the system data in the system storage area.
8 . The solid state storage device as claimed in claim 1 , wherein the plural dies further comprise respective second spaces, wherein the system storage area is defined by the second spaces of the plural dies collaboratively.
9 . A data processing method for a solid state storage device, the solid state storage device comprising a non-volatile memory with plural dies, the plural dies comprising respective first spaces as data storage areas, the data storage areas is divided into plural stripes, the data processing method comprising steps of:
when the solid state storage device is in a normal working state, storing a write data in a buffer and continuously judging whether a power failure occurs; and
if an amount of the write data in the buffer does not reach a predetermined data amount when the power failure occurs, performing a parity check process on the write data to generate a parity data; storing the write data in the data storage areas of the plural dies; and storing the parity data and a position information corresponding to the parity data in a system storage area of the non-volatile memory.
10 . The data processing method as claimed in claim 9 , wherein the position information indicates storage positions of the write data stored in the non-volatile memory.
11 . The data processing method as claimed in claim 9 , wherein if a supply voltage of the solid state storage device drops to a specified voltage value, it is judged that the power failure occurs.
12 . The data processing method as claimed in claim 9 , wherein if a total amount of the write data and the parity data is lower than a stripe size, it is judged that the amount of the write data does not reach the predetermined data amount.
13 . The data processing method as claimed in claim 9 , wherein the write data is stored in a first stripe corresponding to the data storage areas of the plural dies when the power failure occurs, wherein when the solid state storage device is powered on again to store a new data, the new data is firstly stored in the first stripe.
14 . The data processing method as claimed in claim 9 , wherein when the power failure occurs, the data processing method further comprises a step of generating a system data and storing the system data in the system storage area.
15 . The data processing method as claimed in claim 9 , wherein the plural dies further comprise respective second spaces, wherein the system storage area is defined by the second spaces of the plural dies collaboratively.
16 . The data processing method as claimed in claim 9 , wherein after the power failure occurs, the data processing method further comprises a step of judging whether a supply voltage of the solid state storage device occurs an electrical brownout, wherein if the supply voltage of the solid state storage device occurs the electrical brownout, the solid state storage device is restored to the normal working state.
17 . The data processing method as claimed in claim 16 , wherein if the supply voltage of the solid state storage device is restored to a normal level after the power failure occurs, it is judged that the supply voltage of the solid state storage device occurs the electrical brownout.