Three dimensional memory array
The present disclosure includes three dimensional memory arrays, and methods of processing the same. A number of embodiments include a plurality of conductive lines separated from one other by an insulation material, a plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, and a storage element material formed around each respective one of the plurality of conductive extensions and having two different contacts with each respective one of the plurality of conductive lines, wherein the two different contacts with each respective one of the plurality of conductive lines are at two different ends of that respective conductive line.
1. A method of processing a three dimensional memory array, comprising:
forming a conductive line material in a plurality of planes separated from one other by a first insulation material;
forming a first opening through the conductive line material in the plurality of planes;
forming a second insulation material in the first opening;
forming a second opening through the conductive line material in the plurality of planes and the second insulation material formed in the first opening such that the conductive line material in each respective one of the plurality of planes is divided into a first sub-plane and a second sub-plane; and
forming a storage element material in the second opening such that the storage element material has two different contacts with the conductive line material in each respective one of the plurality of planes, wherein one of the contacts with the conductive line material in each respective plane is with the first sub-plane of that respective plane, and the other one of the contacts with the conductive line material in each respective plane is with the second sub-plane of that respective plane.
2. The method of claim 1 , wherein the method includes forming a conductive extension in the second opening after forming the storage element material in the second opening.
3. The method of claim 1 , wherein the method includes:
forming a conductive cylinder in the second opening after forming the storage element material in the second opening; and
forming a conductive extension in the second opening after forming the conductive cylinder in the second opening.
4. The method of claim 1 , wherein the first opening is square shaped.
5. The method of claim 1 , wherein the method includes forming the first opening such that the conductive line material in the plurality of planes is wider in a first direction than a second direction.
6. The method of claim 1 , wherein forming the second opening includes removing portions of the conductive line material in the plurality of planes and the second insulation material such that a resulting area of the conductive line material in the plurality of planes and the second insulation material excludes an area removed in forming the second opening.