Heat spreaders for multiple semiconductor device modules
A heat spreader for use in a memory system is provided, including a thermally conductive body having a first planar side surface and a second planar side surface opposite the first planar side surface, the first planar side surface configured to attach to a first plurality of co-planar semiconductor devices of a first memory module of the memory system, the second planar side surface configured to attach to a second plurality of co-planar semiconductor devices of a second memory module of the memory system, wherein the first planar side surface and the second planar side surface are separated by a body width w substantially equal to a distance between the first plurality of co-planar semiconductor devices and the second plurality of co-planar semiconductor devices.
1. A heat spreader configured for use in a memory system, comprising:
a monolithic thermally conductive body having a first planar side surface and a second planar side surface opposite the first planar side surface, the first planar side surface configured to attach to a first plurality of co-planar semiconductor devices of a first memory module of the memory system, the second planar side surface configured to attach to a second plurality of co-planar semiconductor devices of a second memory module of the memory system,
wherein the first planar side surface and the second planar side surface are separated by a body width w substantially equal to a distance between the first plurality of co-planar semiconductor devices and the second plurality of co-planar semiconductor devices.
2. The heat spreader of claim 1 , wherein the thermally conductive body includes a plurality of air channels extending between the first and second planar side surfaces.
3. The heat spreader of claim 2 , wherein the plurality of air channels is configured to receive a forced air flow from a fan disposed at an end surface of the thermally conductive body.
4. The heat spreader of claim 2 , wherein the plurality of air channels is defined by an internal corrugation of the thermally conductive body.
5. The heat spreader of claim 1 , further comprising:
a first layer of thermally conductive adhesive disposed on the first planar side surface and configured to attach the first planar side surface to the first plurality of co-planar semiconductor devices; and
a second layer of thermally conductive adhesive disposed on the second planar side surface and configured to attach the second planar side surface to the second plurality of co-planar semiconductor devices.
6. The heat spreader of claim 1 , wherein the thermally conductive body is a first thermally conductive body further including a top surface configured to be attached to a second thermally conductive body.
7. The heat spreader of claim 1 , wherein the first and second memory modules are DDR5 DRAM memory modules.
8. The heat spreader of claim 1 , wherein the body width w is between 2 and 6 mm.
9. The heat spreader of claim 1 , wherein the thermally conductive body comprises copper, aluminum, a combination thereof, or an alloy thereof.
10. A memory system comprising:
a first memory module including a first plurality of co-planar semiconductor devices;
a second memory module including a second plurality of co-planar semiconductor devices; and
a heat spreader including a monolithic thermally conductive body having a first planar side surface attached to the first plurality of co-planar semiconductor devices and a second planar side surface attached to the second plurality of co-planar semiconductor devices,
wherein the first planar side surface and the second planar side surface are separated by a body width w substantially equal to a distance between the first plurality of co-planar semiconductor devices and the second plurality of co-planar semiconductor devices.
11. The memory system of claim 10 , wherein the thermally conductive body includes a plurality of air channels extending between the first and second planar side surfaces.
12. The memory system of claim 11 , wherein the plurality of air channels is configured to receive a forced air flow from a fan disposed at an end surface of the thermally conductive body.
13. The memory system of claim 11 , wherein the plurality of air channels is defined by an internal corrugation of the thermally conductive body.
14. The memory system of claim 10 , further comprising:
a first layer of thermally conductive adhesive attaching the first planar side surface to the first plurality of co-planar semiconductor devices; and
a second layer of thermally conductive adhesive attaching the second planar side surface to the second plurality of co-planar semiconductor devices.
15. The memory system of claim 10 , wherein the heat spreader is a first heat spreader and the thermally conductive body is a first thermally conductive body, and further including a second heat spreader having a second thermally conductive body attached to a top surface of the first thermally conductive body.
16. The memory system of claim 15 , wherein the second thermally conductive body includes a plurality of radiating structures configured to exchange heat.
17. The memory system of claim 15 , further comprising a fan configured to direct a forced air flow over the second thermally conductive body.
18. The memory system of claim 10 , wherein the first and second memory modules are DDR5 DRAM memory modules.
19. The memory system of claim 10 , wherein the body width w is between 2 and 6 mm.
20. The memory system of claim 10 , wherein the thermally conductive body comprises copper, aluminum, a combination thereof, or an alloy thereof.