IP Library Granted Patent US 11,012,642
Granted Patent B2
US 11,012,642 · App. 16/123,857 · Granted May 18, 2021

Edgeless large area camera system

Inventors: Farah Fahim (Glen Ellyn, IL); Grzegorz W. Deptuch (Forest Park, IL); Pawel Grybos (Rząska, PL); Robert Szczygiel (Cracow, PL); Piotr Maj (Cracow, PL); Piotr Kmon (Niepołomice, PL); David Peter Siddons (Cutchogue, NY); Joseph Mead (Manorville, NY); Abdul Khader Rumaiz (Nesconset, NY); Robert Kent Bradford (Aurora, IL); John Thomas Weizeorick, III (Naperville, IL)
Assignee: FERMI RESEARCH ALLIANCE, LLC
H04N5/32G01N23/2055
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Quick Facts
Patent No.
US 11,012,642
App. No.
16/123,857
Filed
Sep 6, 2018
Granted
May 18, 2021
Kind
B2
Art Unit
2884
USPC
250/370.09
Abstract

A detecting apparatus includes a multi-tier 3D integrated ASIC comprising one or more analog tiers and one or more digital tiers, and a sensor bonded to the multi-tier 3D integrated ASIC. The detecting apparatus includes an electrical substrate and a group of FPGAs or custom data management ASICs. The detecting apparatus also includes a thermal management system, a power distribution system and one or more connectors to transfer data to a data acquisition system configured for radiation spectroscopy or imaging with zero suppressed or full frame readout.

Claims (43)

1. A method of configuring a detecting apparatus comprising:

electronically and mechanically connecting a motherboard to at least one dead-zone-less detector module having an electrical substrate;

providing a multi-tier 3D integrated ASIC (Application-Specific Integrated Circuit) comprising at least one analog tier and at least one digital tier connected to at least one segmented sensor;

bonding at least one tier of said multi-tier 3D integrated ASIC to said at least one segmented sensor;

bonding at least one tier of said multi-tier 3D integrated ASIC to said electrical substrate of said at least one dead-zone-less detector module;

mounting at least one data processing, computation, and transmission circuit, wherein said at least one data processing, computation, and transmission circuit, onto a side of said at least one dead-zone-less detector module opposite said at least one multi-tier 3D integrated ASIC; and

configuring a thermal management system comprising a cooling system that includes a chiller and a heat exchanger, wherein said heat exchanger is located within a detecting apparatus head and between said motherboard and said at least one dead-zone-less detector module.

2. The method of configuring a detecting apparatus of claim 1 further comprising:

configuring said at least one analog tier and said at least one digital tier utilizing a CMOS process, and subsequently a face-to-face bonded operation.

3. The method of configuring a detecting apparatus of claim 1 wherein said electrical substrate comprises a ceramic or a material based readout board.

4. The method of configuring a detecting apparatus of claim 1 further comprising providing a dead-time-less operation that continuously processes.

5. The method of configuring a detecting apparatus of claim 1 further comprising configuring said at least one segmented sensor with a plurality of sensor pixels and a matching segmented analog tier with a plurality of analog pixels.

6. The method of configuring a detecting apparatus of claim 5 wherein each analog pixel among said plurality of analog pixels includes at least a charge sensitive amplifier with sensor leakage current compensation, a shaping filter, at least one comparator, and at least one trimming digital to analog converter (DAC).

7. The method of configuring a detecting apparatus of claim 5 further comprising configuring said at least one digital tier to comprise a digital functionality for processing signals from said plurality of analog pixels of said at least one analog tier and transferring data off said multi-tier 3D integrated ASIC.

8. The method of configuring a detecting apparatus of claim 2 further comprising die-to-wafer bonding said multi-tier 3D integrated ASIC to a sensor layer on one side and to a ceramic or a material based readout board on the other side to configure an assembly comprising a dead-zone-less detector module.

9. The method of configuring a detecting apparatus of claim 8 further comprising configuring said dead-zone-less detector module to further comprise:

at least one DAC that biases said multi-tier 3D integrated ASIC; and

at least one decoupling capacitor.

10. The method of configuring a detecting apparatus of claim 8 further comprising configuring said dead-zone-less detector module to comprise a plurality of connectors that receive a plurality of signals including power, biases and clocks, and which transmit high speed, multiplexed and concentrated data to a detector head.

11. The method of configuring a detecting apparatus of claim 10 further comprising configuring said detector head to contain a plurality of detector modules, and a thermal management system for power dissipation placed in proximity to said plurality of detector modules.

12. The method of configuring a detecting apparatus of claim 10 further comprising configuring said detector head to transfer high-speed data to a Data Acquisition (DAQ) system for further processing or storage of said data.

13. The method of configuring a detecting apparatus of claim 12 further comprising configuring said detector head to include additional circuitry and components that allow said detector head to function as a data concentrator, receiving data from a plurality of ASICs processing said data and sending said data to said DAQ for further processing.

14. The method of configuring a detecting apparatus of claim 2 further comprising:

thinning said at least one digital tier to a few micrometers of Si.

15. The method of configuring a detecting apparatus of claim 2 further comprising:

adding a TSV in said at least one digital tier.

16. The method of configuring a detecting apparatus of claim 2 further comprising:

adding back metal pads to render connections to TSV's;

adding a handle wafer covering up pads.

17. The method of configuring a detecting apparatus of claim 2 further comprising:

thinning said at least one analog tier to a two or fewer micrometers of Si.

18. The method of configuring a detecting apparatus of claim 2 further comprising:

adding temporary pads to a periphery where test connections were pre-routed;

testing a subset of analog and digital functionalities to verify a design as well as a successful 3D assembly to identify Known Good Dies (KGD); and

removing said temporary pads.

19. The method of configuring a detecting apparatus of claim 2 further comprising:

dicing a 3D assembled wafer without destroying chip edges;

utilizing KGD to die-to-wafer bonding to sensor with minimum gaps;

removing handle material from a digital side to expose buried pads;

flipping and bump-bonding to a ceramic or a material based board; and

flipping and bonding FPGAs on an opposite side.

20. The method of configuring a detecting apparatus of claim 2 further comprising:

populating all other circuit components to create a detector module.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2024
From: FERMI RESEARCH ALLIANCE, LLC
To: FERMI FORWARD DISCOVERY GROUP, LLC
Reel/Frame 069795/0347 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2024
From: FAHIM, FARAH
To: FERMI RESEARCH ALLIANCE, LLC
Reel/Frame 069638/0298 →
Continuity (3)
Division 15214933 · Jul 20, 2016
Provisional Application 62195053 · Jul 21, 2015
Related Publication 20190089913A1 · Mar 21, 2019