Integrated assemblies having a portion of a transistor gate extending into a recessed region of a semiconductor base, and methods of forming integrated assemblies

1. An integrated assembly, comprising:

a semiconductor base having a horizontally-extending upper surface, and having a recessed region with an upper surface beneath the horizontally-extending upper surface; an opening extending into the recessed region;

a transistor gate supported by the semiconductor base; the transistor gate, along a cross-section, having a first segment over the horizontally-extending upper surface, and having a second segment over the recessed region and extending into the opening; the first segment having a first vertically-extending surface along an outer edge; the second segment having a ledge along an edge of the recessed region; the ledge having an upper surface which is lower than the horizontally-extending upper surface of the semiconductor base; the second segment having a second vertically-extending surface extending upwardly from an inner portion of the ledge; an outer portion of the ledge being outward of the second vertically-extending surface;

a first spacer along the first vertically-extending surface; the first spacer having a bottom edge over the horizontally-extending upper surface of the base;

a second spacer along the second vertically-extending surface, the second spacer having a bottom edge beneath the horizontally-extending upper surface of the base and directly over the outer portion of the ledge;

wherein the second spacer is laterally wider than the first spacer; and

wherein the second spacer comprises a vertically-extending second material sandwiched between vertically-extending first material and a vertically-extending third material.

2. The integrated assembly of claim 1 wherein the transistor gate comprises doped silicon.

3. The integrated assembly of claim 1 wherein:

the first, second and third materials form first, second and third portions, respectively, of the second spacer;

wherein the second spacer has a first part having an upper surface at a first height over the upper surface of the ledge, and has second part having an upper surface at a second height over the upper surface of the ledge, with the first height being at least double the second height; and

wherein a transition from the first part of the second spacer to the second part of the second spacer is at an interface where the second portion joins the third portion.

4. The integrated assembly of claim 1 wherein:

the first, second and third materials form first, second and third portions, respectively, of the second spacer;

wherein the second spacer has a first part having an upper surface at a first height over the upper surface of the ledge, and has second part having an upper surface at a second height over the upper surface of the ledge, with the first height being at least double the second height; and

wherein a transition from the first part of the second spacer to the second part of the second spacer is over the third portion.

5. The integrated assembly of claim 1 wherein:

the first, second and third materials form first, second and third portions, respectively, of the second spacer;

wherein the second spacer has a first part having an upper surface at a first height over the upper surface of the ledge, and has second part having an upper surface at a second height over the upper surface of the ledge, with the first height being at least double the second height; and

wherein a transition from the first part of the second spacer to the second part of the second spacer is over the second portion.

6. The integrated assembly of claim 1 comprising:

a first heavily-doped source/drain region outward of the first vertically-extending surface;

a second heavily-doped source/drain region outward of the second vertically-extending surface;

a first lightly-doped diffusion region inward of the first heavily-doped source/drain region and extending to under the first vertically-extending surface; and

a second lightly-doped diffusion region under the second heavily-doped source/drain region and extending to under a bottom of the recessed region.

7. The integrated assembly of claim 6 wherein:

the first lightly-doped diffusion region extends to a first depth beneath the horizontally-extending upper surface of the base;

the second lightly-doped diffusion region extends to a second depth beneath the horizontally-extending upper surface of the base; and

the second depth is at least about double the first depth.

8. The integrated assembly of claim 6 wherein the first heavily-doped source/drain region, the second heavily-doped source/drain region, the first lightly-doped diffusion region and the second lightly-doped diffusion region are n-type regions.

9. The integrated assembly of claim 6 wherein the first heavily-doped source/drain region, the second heavily-doped source/drain region, the first lightly-doped diffusion region and the second lightly-doped diffusion region are p-type regions.

10. An integrated assembly, comprising:

a semiconductor base having a substantially planar upper surface, and having a recessed region with an upper surface lower than the substantially planar upper surface;

a transistor gate material supported by the semiconductor base; the transistor gate material, along a cross-section, having a first region across a portion of the substantially planar upper surface, and having a second region across the recessed region; the second region having a post portion along the first region and extending into a recess of the recessed region; the second region having a ledge portion adjacent the post portion, with the ledge portion having an upper surface beneath the substantially planar upper surface of the base; the transistor gate material having a first sidewall surface along the first region and having a second sidewall surface along the post portion;

a first heavily-doped source/drain region outward of the first sidewall surface;

a second heavily-doped source/drain region outward of the second sidewall surface;

a first lightly-doped diffusion region inward of the first heavily-doped source/drain region and extending to under the first sidewall surface;

a second lightly-doped diffusion region under of the second heavily-doped source/drain region and extending to under a bottom of the recessed region of the semiconductor base; and

wherein:

the first lightly-doped diffusion region extends to a first depth beneath the substantially planar upper surface of the base;

the second lightly-doped diffusion region extends to a second depth beneath the substantially planar upper surface of the base; and

the second depth is at least about double the first depth.

11. The integrated assembly of claim 10 wherein the upper surface of the ledge portion is substantially planar.

12. The integrated assembly of claim 10 wherein the transistor gate material comprises silicon.

13. The integrated assembly of claim 10 wherein the transistor gate material comprises polycrystalline silicon.

14. The integrated assembly of claim 10 wherein:

a first spacer is along the first sidewall surface, with the first spacer having a bottom edge over the substantially planar upper surface of the base; and

a second spacer is along the second sidewall surface, with the second spacer having a bottom edge beneath the substantially planar upper surface of the base and on the ledge portion.

15. The integrated assembly of claim 14 wherein the second spacer is laterally wider than the first spacer.

16. The integrated assembly of claim 15 wherein the second spacer has a first part having an upper surface at a first height over the upper surface of the ledge portion, and has second part having an upper surface at a second height over the upper surface of the ledge portion, with the first height being at least 5 times greater than the second height.

17. The integrated assembly of claim 16 wherein the second spacer has a first lateral width, and there the second part of the second spacer has a second lateral width; the second lateral width being less than or equal to about one-half of the first lateral width.

18. The integrated assembly of claim 17 wherein the second lateral width is at least about one-fifth of the first lateral width.

19. The integrated assembly of claim 16 wherein:

the second spacer comprises first, second and third portions laterally adjacent to one another, with the second portion being laterally between the first and third portions; and

wherein a transition from the first part of the second spacer to the second part of the second spacer is at an interface where the second portion joins to the third portion.

20. The integrated assembly of claim 16 wherein:

the second spacer comprises first, second and third portions laterally adjacent to one another, with the second portion being laterally between the first and third portions; and

wherein a transition from the first part of the second spacer to the second part of the second spacer is over the third portion.

21. The integrated assembly of claim 16 wherein:

the second spacer comprises first, second and third portions laterally adjacent to one another, with the second portion being laterally between the first and third portions; and

wherein a transition from the first part of the second spacer to the second part of the second spacer is over the second portion.

22. The integrated assembly of claim 10 wherein the first heavily-doped source/drain region, the second heavily-doped source/drain region, the first lightly-doped diffusion region and the second lightly-doped diffusion region are n-type regions.

23. The integrated assembly of claim 10 wherein the first heavily-doped source/drain region, the second heavily-doped source/drain region, the first lightly-doped diffusion region and the second lightly-doped diffusion region are p-type regions.

24. An integrated assembly, comprising:

a semiconductor base having a horizontally-extending upper surface, and having a recessed region with an upper surface beneath the horizontally-extending upper surface; an opening extending into the recessed region;

a transistor gate supported by the semiconductor base; the transistor gate, along a cross-section, having a first segment over the horizontally-extending upper surface, and having a second segment over the recessed region and extending into the opening; the first segment having a first vertically-extending surface along an outer edge; the second segment having a ledge along an edge of the recessed region; the ledge having an upper surface which is lower than the horizontally-extending upper surface of the semiconductor base; the second segment having a second vertically-extending surface extending upwardly from an inner portion of the ledge; an outer portion of the ledge being outward of the second vertically-extending surface;

a first spacer along the first vertically-extending surface; the first spacer having a bottom edge over the horizontally-extending upper surface of the base;

a second spacer along the second vertically-extending surface, the second spacer having a bottom edge beneath the horizontally-extending upper surface of the base and directly over the outer portion of the ledge;

a first heavily-doped source/drain region outward of the first vertically-extending surface;

a second heavily-doped source/drain region outward of the second vertically-extending surface;

a first lightly-doped diffusion region inward of the first heavily-doped source/drain region and extending to under the first vertically-extending surface;

a second lightly-doped diffusion region under the second heavily-doped source/drain region and extending to under a bottom of the recessed region;

wherein:

the first lightly-doped diffusion region extends to a first depth beneath the horizontally-extending upper surface of the base;

the second lightly-doped diffusion region extends to a second depth beneath the horizontally-extending upper surface of the base; and

the second depth is at least about double the first depth.

25. An integrated assembly, comprising:

a semiconductor base having a substantially planar upper surface, and having a recessed region with an upper surface lower than the substantially planar upper surface;

a transistor gate material supported by the semiconductor base; the transistor gate material, along a cross-section, having a first region across a portion of the substantially planar upper surface, and having a second region across the recessed region; the second region having a post portion along the first region and extending into a recess of the recessed region; the second region having a ledge portion adjacent the post portion, with the ledge portion having an upper surface beneath the substantially planar upper surface of the base; the transistor gate material having a first sidewall surface along the first region and having a second sidewall surface along the post portion;

a first heavily-doped source/drain region outward of the first sidewall surface;

a second heavily-doped source/drain region outward of the second sidewall surface;

a first lightly-doped diffusion region inward of the first heavily-doped source/drain region and extending to under the first sidewall surface;

a second lightly-doped diffusion region under of the second heavily-doped source/drain region and extending to under a bottom of the recessed region of the semiconductor base;

wherein:

a first spacer is along the first sidewall surface, with the first spacer having a bottom edge over the substantially planar upper surface of the base;

a second spacer is along the second sidewall surface, with the second spacer having a bottom edge beneath the substantially planar upper surface of the base and on the ledge portion;

wherein the second spacer is laterally wider than the first spacer; and

wherein the second spacer has a first part having an upper surface at a first height over the upper surface of the ledge portion, and has second part having an upper surface at a second height over the upper surface of the ledge portion, with the first height being at least 5 times greater than the second height.