IP Library Granted Patent US 10,892,240
Granted Patent B2
US 10,892,240 · App. 16/126,009 · Granted Jan 12, 2021

Semiconductor fabrication apparatus and semiconductor fabrication method

Inventor: Keiichi Niwa (Yokkaichi, JP)
Assignee: TOSHIBA MEMORY CORPORATION
H01L24/11B23K1/203H01L24/05H01L24/742B23K3/082B23K2101/40H01L2224/022H01L2224/05647H01L2224/117H01L2224/119H01L2224/742
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Quick Facts
Patent No.
US 10,892,240
App. No.
16/126,009
Granted
Jan 12, 2021
Kind
B2
Abstract

A semiconductor fabrication apparatus has a transfer plate having a plurality of transfer pins to transfer a flux onto a plurality of lands on a semiconductor substrate, a holder movable with the transfer plate, to hold the transfer plate, a positioning mechanism to perform positioning of the holder so that the plurality of lands and the respective transfer pins contact each other; and a pitch adjuster to adjust a pitch of at least part of the plurality of transfer pins.

Claims (11)

1. A semiconductor fabrication method comprising:

adjusting a pitch of at least part of a plurality of transfer pins of a transfer plate, the plurality of transfer pins transferring a flux onto a plurality of lands on a semiconductor substrate; and

contacting the plurality of transfer pins after the pitch is adjusted, with the corresponding one of the lands to transfer fluxes attached to tips of the plurality of transfer pins onto the respective plurality of lands,

wherein adjusting the pitch heats at least one of the transfer plate and a holder movable with the transfer plate.

2. The semiconductor fabrication method of claim 1 , wherein a heater is disposed at an end side of the transfer plate and of the holder so that, among the plurality of transfer pins, a pitch between transfer pins at a periphery side of the transfer plate becomes wider than a pitch between transfer pins at a center side of the transfer plate.

3. The semiconductor fabrication method of claim 1 , wherein a heater is disposed to surround a periphery of the transfer plate, and

the holder holds the transfer plate and the heater movable with each other.

4. The semiconductor fabrication method of claim 1 , wherein the adjusting the pitch adjusts the pitch of the at least part of the transfer pins when a pitch between at least one of the plurality of lands and a reference position on the semiconductor substrate exceeds a predetermined threshold value.

5. The semiconductor fabrication method of claim 1 , wherein the adjusting the pitch applies tensile stress to at least one of the transfer plate and the holder to adjust the pitch of the at least part of the transfer pins.

6. The semiconductor fabrication method of claim 5 , wherein at least one of the transfer plate and the holder is a rectangular body, and

the adjusting the pitch applies the tensile stress to the rectangular body from four corner thereof in a diagonal direction.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058905/0582 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 10, 2018
From: NIWA, KEIICHI
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 046825/0828 →