IP Library › Patent Application 16126823
Patent Application
App. No. 16/126,823

MAGNETIC MEMORY DEVICE

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Patent No.
US None
App. No.
16/126,823
Abstract

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

Claims (53)

1 . A magnetic memory device comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction; and

a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein

the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer provided between the first sub-magnetic layer and the second sub-magnetic layer, and

the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

2 . The device according to claim 1 , wherein

the first magnetic layer further includes a third sub-magnetic layer having a magnetization direction antiparallel to that of the second sub-magnetic layer, and a second intermediate layer provided between the second sub-magnetic layer and the third sub-magnetic layer, and

the second sub-magnetic layer is provided between the first sub-magnetic layer and the third sub-magnetic layer.

3 . The device according to claim 2 , wherein

the third sub-magnetic layer has a magnetization amount smaller than that of the second sub-magnetic layer.

4 . The device according to claim 2 , wherein

a sum of the magnetization amount of the first sub-magnetic layer and a magnetization amount of the third sub-magnetic layer is equal to a magnetization amount of the second sub-magnetic layer.

5 . The device according to claim 1 , further comprising:

a third magnetic layer having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer and canceling a magnetic field applied from the second magnetic layer to the first magnetic layer.

6 . The device according to claim 1 , wherein

the first sub-magnetic layer and the second sub-magnetic layer contain at least cobalt (Co).

7 . The device according to claim 1 , wherein

the first intermediate layer contains at least one element selected from ruthenium (Ru), rhodium (Rh), osmium (Os), and iridium (Ir).

8 . A magnetic memory device comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction; and

a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein

the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer provided between the first sub-magnetic layer and the second sub-magnetic layer, and

the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a thickness smaller than that of the second sub-magnetic layer.

9 . The device according to claim 8 , wherein

the first magnetic layer further includes a third sub-magnetic layer having a magnetization direction antiparallel to that of the second sub-magnetic layer, and a second intermediate layer provided between the second sub-magnetic layer and the third sub-magnetic layer, and

the second sub-magnetic layer is provided between the first sub-magnetic layer and the third sub-magnetic layer.

10 . The device according to claim 9 , wherein

the third sub-magnetic layer has a thickness smaller than that of the second sub-magnetic layer.

11 . The device according to claim 8 , further comprising:

a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer and canceling a magnetic field applied from the second magnetic layer to the first magnetic layer.

12 . The device according to claim 8 , wherein

the first sub-magnetic layer and the second sub-magnetic layer contain at least cobalt (Co).

13 . The device according to claim 8 , wherein

the first intermediate layer contains at least one element selected from ruthenium (Ru), rhodium (Rh), osmium (Os), and iridium (Ir).

14 . A magnetic memory device comprising:

a first magnetic layer having a variable magnetization direction;

a second magnetic layer having a fixed magnetization direction; and

a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein

the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer provided between the first sub-magnetic layer and the second sub-magnetic layer, and

the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a saturation magnetization smaller than that of the second sub-magnetic layer.

15 . The device according to claim 14 , wherein

the first magnetic layer further includes a third sub-magnetic layer having a magnetization direction antiparallel to that of the second sub-magnetic layer and a second intermediate layer provided between the second sub-magnetic layer and the third sub-magnetic layer, and

the second sub-magnetic layer is provided between the first sub-magnetic layer and the third sub-magnetic layer.

16 . The device according to claim 15 , wherein

the third sub-magnetic layer has a saturation magnetization smaller than that of the second sub-magnetic layer.

17 . The device according to claim 14 , further comprising:

a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer and canceling a magnetic field applied from the second magnetic layer to the first magnetic layer.

18 . The device according to claim 14 , wherein

the first sub-magnetic layer and the second sub-magnetic layer contain at least cobalt (Co).

19 . The device according to claim 14 , wherein

the first intermediate layer contains at least one element selected from ruthenium (Ru), rhodium (Rh), osmium (Os), and iridium (Ir).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2019
From: YOSHIKAWA, MASATOSHI
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 049362/0019 →