Quality control method of position measurement light source, semiconductor manufacturing apparatus, and method for manufacturing semiconductor device
According to one embodiment, a quality control method of a position measurement light source includes irradiating light of the position measurement light source on a plurality of marks having different heights and measuring a relationship between the height of the mark and an intensity of light reflected by the mark. The quality control method includes identifying a wavelength of the position measurement light source by comparing measurement data acquired by the measuring to reference data of a relationship between the height of the mark and an intensity of reflected light for each of a plurality of wavelengths.
1. A semiconductor manufacturing apparatus, comprising:
a position measurement light source; and
a controller irradiating light of the position measurement light source on a plurality of marks having different heights, measuring a relationship between the height of the mark and an intensity of light reflected by the mark, and identifying a wavelength of the position measurement light source by comparing measurement data acquired by the measuring to reference data of a relationship between the height of the mark and an intensity of reflected light for each of a plurality of wavelengths.
2. The apparatus according to claim 1 , further comprising memory storing the reference data.
3. The apparatus according to claim 1 , further comprising a wafer stage, the plurality of marks being provided in the wafer stage.
4. The apparatus according to claim 3 , wherein the heights of the marks are different to have not less than three steps and not more than five steps within a range not less than 1/15 and not more than 1/10 of a specification wavelength of the position measurement light source.
5. The apparatus according to claim 3 , wherein the mark is an unevenness pattern including a plurality of protrusions and a plurality of recesses arranged alternately and periodically.
6. The apparatus according to claim 5 , wherein
the mark includes the unevenness pattern, and a film covering the unevenness pattern, and
the height of the mark is a thickness of the film.
7. The apparatus according to claim 1 , further comprising an exposure light source.
8. The apparatus according to claim 1 , wherein the controller graphs the relationship between the height of the mark and the intensity of the light reflected by the mark.