IP Library Granted Patent US 10,784,103
Granted Patent B2
US 10,784,103 · App. 16/128,120 · Granted Sep 22, 2020

Water level sequencing flow cell fabrication

Inventors: Shifeng Li (Fremont, CA); Jian Gong (Danville, CA); Yan-You Lin (Fremont, CA); Cheng Frank Zhong (Menlo Park, CA)
Assignee: MGI TECH CO., LTD.
H01L21/022B01L3/502707G01N21/05G01N21/6454G01N33/48707H01L21/02131H01L21/02175H01L21/02266H01L21/02422H01L21/28264H01L29/20B01L3/502715B01L3/502784B01L2300/0663B01L2300/0816B01L2300/0861B01L2300/0877B01L2300/165G01N2021/058
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,784,103
App. No.
16/128,120
Granted
Sep 22, 2020
Kind
B2
Abstract

A method for forming sequencing flow cells can include providing a semiconductor wafer covered with a dielectric layer, and forming a patterned layer on the dielectric layer. The patterned layer has a differential surface that includes alternating first surface regions and second surface regions. The method can also include attaching a cover wafer to the semiconductor wafer to form a composite wafer structure including a plurality of flow cells. The composite wafer structure can then be singulated to form a plurality of dies. Each die forms a sequencing flow cell. The sequencing flow cell can include a flow channel between a portion of the patterned layer and a portion of the cover wafer, an inlet, and an outlet. Further, the method can include functionalizing the sequencing flow cell to create differential surfaces.

Claims (51)

1. A method for forming sequencing flow cells, comprising:

providing a semiconductor wafer covered with a dielectric layer;

forming a patterned layer on the dielectric layer, the patterned layer having differential surface regions that include first surface regions and second surface regions, wherein the first surface regions are hydrophilic surfaces and the second surface regions are hydrophobic surfaces;

attaching a cover wafer to the semiconductor wafer to form a composite wafer structure that includes a plurality of sequencing flow cells, wherein each sequencing flow cell includes:

a flow channel between the patterned layer and the cover wafer;

one or more first surface regions in the patterned layer;

one or more second surface regions in the patterned layer; and

an inlet and an outlet coupled to the flow channel; and

singulating the composite wafer structure to form a plurality of dies, each die including a sequencing flow cell.

2. The method of claim 1 , further comprising forming inlets and outlets in the cover wafer before attaching the cover wafer to the semiconductor wafer.

3. The method of claim 1 , wherein the semiconductor wafer further comprises a CMOS layer underlying the dielectric layer.

4. The method of any of claim 1 , wherein forming a patterned layer comprises:

forming a metal oxide layer overlying the dielectric layer on the semiconductor wafer; and

patterning the metal oxide layer into a plurality of metal oxide regions,

wherein the metal oxide regions are configured to receive nucleic acid macromolecules.

5. The method of claim 1 , further comprising forming a support structure on the semiconductor wafer before attaching the cover wafer to the semiconductor wafer.

6. The method of claim 5 , further comprising bonding the cover wafer to the support structure.

7. The method of claim 1 , wherein the cover wafer comprises a glass wafer.

8. The method of claim 1 , further comprising functionalizing the sequencing flow cell, wherein functionalizing the sequencing flow cell comprises exposing the flow channel to materials supplied through the inlet and outlet.

9. The method of claim 1 , wherein singulating the composite wafer structure comprises separating the composite wafer structure into individual dies using a wafer cutting process.

10. A method for forming sequencing flow cells, comprising:

providing a semiconductor wafer covered with a dielectric layer;

forming a patterned layer on the dielectric layer, the patterned layer having differential surface regions that include first surface regions and second surface regions;

attaching a cover wafer to the semiconductor wafer to form a composite wafer structure that includes a plurality of sequencing flow cells, wherein each sequencing flow cell includes:

a flow channel between the patterned layer and the cover wafer;

one or more first surface regions in the patterned layer;

one or more second surface regions in the patterned layer; and

an inlet and an outlet coupled to the flow channel; and

singulating the composite wafer structure to form a plurality of dies, each die including a sequencing flow cell;

wherein the first surface regions are hydrophobic surfaces and the second surface regions are hydrophilic surfaces.

11. A method for forming sequencing flow cells, comprising:

providing a semiconductor wafer having a dielectric layer overlying a complementary metal-oxide-semiconductor (CMOS) layer, wherein the CMOS layer includes:

a photo sensing layer, the photo sensing layer including a plurality of photodiodes;

an electronic circuit layer coupled to the photo sensing layer for processing sensed signals; and

forming a patterned layer on the dielectric layer, the patterned layer having metal oxide regions and silicon oxide regions;

attaching a glass wafer to the semiconductor wafer to form a composite wafer structure, the glass wafer including a plurality of holes and the composite wafer structure including a plurality of sequencing flow cells, wherein each sequencing flow cell includes:

a glass layer having holes configured as an inlet and an outlet of the sequencing flow cell;

multiple metal oxide regions and silicon oxide regions; and

a flow channel between the glass layer and the multiple metal oxide regions and silicon oxide regions; and

singulating the composite wafer structure to form a plurality of dies, each die including a sequencing flow cell.

12. The method of claim 11 , wherein forming a patterned layer comprises:

forming a metal oxide layer overlying the dielectric layer on the semiconductor wafer; and

patterning the metal oxide layer into a plurality of metal oxide regions,

wherein the metal oxide regions are configured to receive nucleic acid macromolecules.

13. The method of claim 11 , wherein forming a patterned layer comprises:

forming a metal oxide layer;

forming a silicon oxide layer overlying the metal oxide layer; and

patterning the silicon oxide layer,

wherein regions of the metal oxide layer not covered by the silicon oxide layer are configured to receive a nucleic acid macromolecule.

14. The method of claim 11 , further comprising bonding the glass wafer to the semiconductor wafer.

15. The method of claim 11 , further comprising functionalizing the sequencing flow cell, wherein functionalizing the sequencing flow cell comprises exposing the sequencing flow cell to materials supplied through the inlet and outlet.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION NUMBERS BY REMOVING APLLICATIONS 62843972 AND 62798378 PREVIOUSLY RECORDED AT REEL: 049933 FRAME: 0896. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 19, 2021
From: BGI SHENZHEN CO., LTD.
To: MGI TECH CO., LTD.
Reel/Frame 057857/0110 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2019
From: BGI SHENZHEN CO., LTD.
To: MGI TECH CO., LTD.
Reel/Frame 049933/0896 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2019
From: COMPLETE GENOMICS, INC.
To: BGI SHENZHEN CO., LTD.
Reel/Frame 049933/0911 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2018
From: LI, SHIFENG; GONG, JIAN; LIN, YAN-YOU; ZHONG, CHENG FRANK
To: COMPLETE GENOMICS, INC.
Reel/Frame 046871/0368 →
Continuity (3)
Provisional Application 62669890 · May 10, 2018
Provisional Application 62560585 · Sep 19, 2017
Related Publication 20190088463A1 · Mar 21, 2019