IP Library Granted Patent US 10,900,291
Granted Patent B2
US 10,900,291 · App. 16/133,643 · Granted Jan 26, 2021

Polycrystalline diamond elements and systems and methods for fabricating the same

Inventors: Daren Nathaniel Heaton (Spanish Fork, UT); Jeremy Brett Lynn (Nephi, UT)
Assignee: US Synthetic Corporation
E21B10/55B24D3/10B24D3/348B32B18/00C04B35/528C04B35/645C04B37/001C04B41/00C22C26/00E21B10/52E21B10/5673E21B10/5676E21B10/5735B22F7/062B22F7/08B24D18/0009C04B2235/3813C04B2235/3821C04B2235/404C04B2235/405C04B2235/407C04B2235/427C04B2237/363C04B2237/401C04B2237/582C22C2026/005C22C2026/006C22C2026/008
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Quick Facts
Patent No.
US 10,900,291
App. No.
16/133,643
Granted
Jan 26, 2021
Kind
B2
Abstract

Polycrystalline diamond includes a working surface and a peripheral surface extending around an outer periphery of the working surface. The polycrystalline diamond includes a first volume including an interstitial material and a second volume having a leached region that includes boron and titanium. A method of fabricating a polycrystalline diamond element includes positioning a first volume of diamond particles adjacent to a substrate, the first volume of diamond particles including a material that includes a group 13 element, and positioning a second volume of diamond particles adjacent to the first volume of diamond particles such that the first volume of diamond particles is disposed between the second volume of diamond particles and the substrate, the second volume of diamond particles having a lower concentration of material including the group 13 element than the first volume of diamond particles. Various other articles, assemblies, and methods are also disclosed.

Claims (45)

1. Polycrystalline diamond, comprising:

polycrystalline diamond having a working surface and a peripheral surface extending around an outer periphery of the working surface, the polycrystalline diamond comprising:

a first volume comprising an interstitial material; and

a second volume comprising a leached region that comprises boron and titanium, wherein the second volume is disposed between the working surface and the first volume.

2. The polycrystalline diamond of claim 1 , wherein the leached region further comprises a compound comprising two or more of boron, titanium, cobalt, molybdenum, and tungsten.

3. The polycrystalline diamond of claim 2 , wherein the compound in the leached region comprises at least one of a tungsten-cobalt compound, a titanium-cobalt compound, a cobalt-boron compound, a tungsten-cobalt-boron compound, or a titanium-cobalt-boron compound.

4. The polycrystalline diamond of claim 2 , wherein the compound includes the tungsten, and wherein the tungsten comprises an intermetallic compound.

5. The polycrystalline diamond of claim 1 , wherein the leached region comprises non-elemental cobalt.

6. The polycrystalline diamond of claim 1 , wherein at least one of the boron or the titanium in the leached region is located at at least one of the working surface or the peripheral surface.

7. The polycrystalline diamond of claim 1 , wherein the interstitial material of the first volume comprises at least one of boron, titanium, copper, chromium, molybdenum, cobalt, or tungsten.

8. The polycrystalline diamond of claim 1 , wherein the leached region is electrically conductive.

9. The polycrystalline diamond of claim 1 , wherein the leached region exhibits an electrical surface conductivity of at least approximately 700 S/m.

10. The polycrystalline diamond of claim 1 , further comprising a concave boundary between the second volume and the first volume.

11. The polycrystalline diamond of claim 1 , further comprising an arcuate boundary between the second volume and the first volume.

12. The polycrystalline diamond of claim 1 , wherein a portion of the second volume is defined by at least a portion of at least one of the working surface or the peripheral surface.

13. The polycrystalline diamond of claim 1 , wherein the second volume defines at least a portion of the working surface.

14. The polycrystalline diamond of claim 1 , further comprising an arcuate boundary between the leached region and an unleached region, wherein the unleached region is disposed between the first volume and the leached region.

15. The polycrystalline diamond of claim 14 , wherein the arcuate boundary between the leached region and the unleached region generally follows a boundary between the unleached region and the first volume.

16. A method of fabricating a polycrystalline diamond element, the method comprising:

providing the polycrystalline diamond of claim 1 comprising diamond particles;

positioning the first volume of the diamond particles adjacent to a substrate, the first volume of diamond particles including a material comprising a group 13 element;

positioning the second volume of the diamond particles of the polycrystalline diamond adjacent to the first volume of the diamond particles such that the first volume of the diamond particles is disposed between the second volume of the diamond particles and the substrate, the second volume of the diamond particles having a lower concentration of the material comprising the group 13 element than the first volume of the diamond particles;

enclosing the substrate, the first volume of the diamond particles, and the second volume of the diamond particles in a pressure transmitting medium to form a cell assembly; and

subjecting the cell assembly to a high-pressure/high-temperature process to form a polycrystalline diamond table coupled to the substrate.

17. Polycrystalline diamond, comprising:

a working surface;

a peripheral surface extending around an outer periphery of the working surface;

a first volume comprising an interstitial material; and

a second volume comprising a leached region that comprises boron and titanium, wherein the interstitial material of the first volume comprises at least one of boron, titanium, copper, chromium, molybdenum, cobalt, or tungsten, and wherein concentration of at least one of the boron or the titanium in the second volume increases along a direction from a portion of the second volume adjacent the first volume toward the working surface of the polycrystalline diamond.

18. Polycrystalline diamond, comprising:

a working surface;

a peripheral surface extending around an outer periphery of the working surface;

a first volume comprising an interstitial material; and

a second volume comprising a leached region that comprises boron and titanium, wherein the interstitial material of the first volume comprises at least one of BCo, BCo 2 , B 2 Co 3 , Co 2 B, Co 23 B 6 , Co 3 Ti, TiCo 2 , CoW 2 B 2 , Co 21 W 2 B 6 , WC, or TiC.

19. Polycrystalline diamond, comprising:

a working surface;

a peripheral surface extending around an outer periphery of the working surface;

a first volume comprising an interstitial material;

a second volume comprising a leached region that comprises one or more group 13 elements; and

a boundary comprising one of:

an arcuate boundary between the leached region and an unleached region, wherein the unleached region is disposed between the first volume and the leached region;

a concave boundary between the second volume and the first volume; or

an arcuate boundary between the second volume and the first volume.

20. The polycrystalline diamond of claim 19 , wherein the arcuate boundary between the leached region and the unleached region generally follows a boundary between the unleached region and the first volume.

21. The polycrystalline diamond of claim 19 , wherein the second volume at least partially defines the working surface at a location opposing the first volume.

Assignments (6)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →
SECURITY AGREEMENT Recorded Nov 6, 2019
From: APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 050941/0695 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2018
From: HEATON, DAREN NATHANIEL; LYNN, JEREMY BRETT
To: US SYNTHETIC CORPORATION
Reel/Frame 046916/0777 →