Sensitive x-ray and gamma-ray detectors including perovskite single crystals
Perovskite single crystal X-ray and gamma-ray radiation detector devices include an X-ray and gamma-ray wavelength responsive active layer including a perovskite single crystal. The perovskite single crystal is a perovskite single crystal having a structure of ABX 3 , wherein A is methylammonium (CH 3 NH 3 +), C S +, formamidinum (H 2 NCHNH 2 +), or Rb + or a mixture thereof, B is Pb 2+ which can be partially or completely replaced by other ions including Bi 3+ , Sb 3+ , Sn 2+ or a mixture thereof, and X is a halide anion, thiocyanate (SCN−) or a mixture thereof.
1. A perovskite single crystal X-ray and gamma-ray radiation detector device, comprising:
an X-ray and gamma-ray wavelength responsive active layer including a perovskite single crystal;
a first electrode disposed on a first surface of the perovskite single crystal; and
a second electrode disposed on the first surface or on a second surface of the perovskite single crystal opposite the first surface;
wherein the perovskite single crystal is a perovskite single crystal having a structure of APbBr 3-x Cl x , wherein A is methylammonium (CH 3 NH 3 +) and
wherein x is a fractional number between 0 and 0.6.
2. The device of claim 1 , wherein a thickness of the perovskite single crystal is between about 0.01 mm and about 100 mm.
3. The device of claim 1 , wherein perovskite single crystal is responsive to photons having energy in the range of about 1 eV to about 10 MeV.
4. The device of claim 1 , wherein the perovskite single crystal includes a MAPbBr 3 single crystal, and wherein the MAPbBr 3 single crystal is synthesized with a ratio of PbBr 2 :MABr around 0.8 in a precursor solution, wherein MA is methylammonium (CH 3 NH 3 +).
5. The device of claim 1 , wherein the first and second electrodes each comprise C 60 , BCP, gold, silver, aluminum, gallium, chromium, or copper.
6. The device of claim 1 , wherein perovskite structure includes a MAPbBr 3-x Cl x structure formed by incorporating n-type MAPbCl 3 into p-type MAPbBr 3 .
7. A method of improving the sensitivity or signal-to-noise ratio of a perovskite single crystal device, the method comprising:
incorporating Y ions into a perovskite single crystal having a structure of ABX 3 , where the Y ions include one kind of ion or many kinds of ions together, and wherein A is methylammonium (CH 3 NH 3 + ), Cs + , formamidinum (H 2 NCHNH 2 + ), or Rb + or a mixture thereof, wherein B is Pb 2+ , Bi 3+ , Sb 3+ , or Sn 2+ or a mixture thereof, and X is a halide anion(s), thiocyanate (SCN − ) or a mixture thereof;
wherein the resulting perovskite single crystal is a perovskite single crystal having a structure of MABI 3-x-y-z Br x Cl y SCN z , wherein MA is methylammonium (CH 3 NH 3 + ), Cs + , formamidinum (H 2 NCHNH 2 + ), or Rb + or a mixture thereof, B is Pb 2+ , Bi 3+ , Sb 3+ , or Sn 2+ or a mixture thereof, and wherein x, y and z are each fractional numbers between, and including, 0 and 3.
8. The method of claim 7 , wherein a thickness of the perovskite single crystal structure is between about 0.01 mm and about 100 mm.
9. The method of claim 7 , further comprising applying a treatment to a top surface of the single crystal that results in a suppression of a leakage current of the single crystal device.
10. The method of claim 9 , wherein the treatment includes an oxidation treatment or thermal annealing of the single crystal under a temperature of between about 20° C. and about 3000° C.
11. The method of claim 7 , wherein the perovskite single crystal is a perovskite single crystal having a structure of MABI 3-x-y-z Br x Cl y SCN z , wherein MA is methylammonium (CH 3 NH 3 + ), Cs + , formamidinum (H 2 NCHNH 2 + ), or Rb + or a mixture thereof, B is Pb 2+ , Bi 3+ , Sb 3+ , or Sn 2+ or a mixture thereof, and wherein x, y and z are each fractional numbers between 0 and 3.
12. A perovskite single crystal X-ray and gamma-ray radiation detector device, comprising:
an X-ray and gamma-ray wavelength responsive active layer including a perovskite single crystal;
a first electrode disposed on a first surface of the perovskite single crystal; and
a second electrode disposed on the first surface or on a second surface of the perovskite single crystal opposite the first surface;
wherein the perovskite single crystal is a perovskite single crystal having a structure of MABI 3-x-y-z Br x Cl y SCN z , wherein MA is methylammonium (CH 3 NH 3 + ), Cs + , formamidinum (H 2 NCHNH 2 + ), or Rb + or a mixture thereof, B is Pb 2+ , Bi 3+ , Sb 3+ , or Sn 2+ or a mixture thereof, and wherein x, y and z are each fractional numbers between, and including, 0 and 3.
13. The method of claim 12 , wherein the perovskite single crystal is a perovskite single crystal having a structure of MABI 3-x-y-z Br x Cl y SCN z , wherein MA is methylammonium (CH 3 NH 3 + ), Cs + , formamidinum (H 2 NCHNH 2 + ), or Rb + or a mixture thereof, B is Pb 2+ , Bi 3+ , Sb 3+ , or Sn 2+ or a mixture thereof, and wherein x, y and z are each fractional numbers between 0 and 3.
14. The device of claim 12 , wherein perovskite structure includes a MAPbBr 3-x Cl x structure formed by incorporating n-type MAPbCl 3 into p-type MAPbBr 3 .