IP Library Granted Patent US 10,473,597
Granted Patent B2
US 10,473,597 · App. 16/139,281 · Granted Nov 12, 2019

Neutron grid, neutron grid stack, neutron grid device, and method of manufacturing neutron grid

Inventors: Yukihiro Fukuta (Yokohama, JP); Yoshitaka Adachi (Yokohama, JP); Nobuaki Nakashima (Yokohama, JP); Koichi Nittoh (Yokohama, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
G01N23/05G01N23/09G01T1/29G01T3/00G01T7/00G01N2223/106
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Quick Facts
Patent No.
US 10,473,597
App. No.
16/139,281
Granted
Nov 12, 2019
Kind
B2
Abstract

A neutron grid, comprises: a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions. A thermal expansion coefficient difference between one of the spacers and one of the absorbers is ±9×10 −6 /° C. or less, or Young's modulus of the spacer is 100 GPa or more.

Claims (33)

1. A neutron grid, comprising:

a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and

a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions, wherein

the spacers contain W and at least one selected from the group consisting of Si, Al 2 O 3 , AlN, SiC, and Y 2 O 3 ,

the absorbers contain Ta, or Ta and at least one selected from the group consisting of B, Gd, Sm, Li, Cd, Gd 2 O 3 , and 10 B 4 C,

the covers contain Al, or Al and at least one selected from the group consisting of W, Pb and Bi, and

a thermal expansion coefficient difference between one of the spacers and one of the absorbers is ±9×10 −6 /° C. or less, or Young's modulus of one of the spacers is 100 GPa or more.

2. The neutron grid according to claim 1 , wherein

the thermal expansion coefficient difference is ±9×10 −6 /° C. or less, and the Young's modulus of one of the spacers is 100 GPa or more.

3. The neutron grid according to claim 1 , wherein

the first neutrons and the second neutrons include thermal neutrons.

4. The neutron grid according to claim 3 , wherein

a thermal neutron mass attenuation coefficient of one of the absorbers is 100 times or more as large as a thermal neutron mass attenuation coefficient of one of the spacers.

5. The neutron grid according to claim 1 , wherein

a width of one of the absorbers in the first direction is 0.01 μm or more and 30 μm or less.

6. The neutron grid according to claim 1 , wherein

a width of one of the absorbers in the first direction is 100 μm or more and 500 μm or less.

7. The neutron grid according to claim 1 , wherein

at least one of the spacers and the absorbers extend along an incident direction of the first neutrons.

8. The neutron grid according to claim 1 , wherein

at least one of the spacers and the absorbers extend in parallel with each other from one of the covers to the other thereof.

9. The neutron grid according to claim 1 , wherein

at least one of the spacers and the absorbers extend to widen an interval therebetween from one of the covers to the other of the covers.

10. A neutron grid stack, comprising:

a first neutron grid according to claim 1 ; and

a second neutron grid according to claim 1 , being stacked on the first neutron grid.

11. A neutron grid device, comprising:

a neutron grid according to claim 1 ; and

a controller to adjust a direction of a center axis of the neutron grid onto an incident direction of the first neutrons.

12. A method of manufacturing the neutron grid according to claim 1 , comprising:

forming the absorbers on the spacers using a vapor deposition method, a precipitation method, or a printing method;

arranging the spacers and the absorbers along the first direction to form the grid; and

sandwiching the grid with the covers along the third direction.

Assignments (4)
NUNC PRO TUNC ASSIGNMENT Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MATERIALS CO. LTD.
Reel/Frame 074940/0511 →
CHANGE OF NAME Recorded Feb 19, 2026
From: TOSHIBA MATERIALS CO. LTD.
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 074941/0803 →
CHANGE OF ADDRESS Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 074941/0846 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2018
From: FUKUTA, YUKIHIRO; ADACHI, YOSHITAKA; NAKASHIMA, NOBUAKI; NITTOH, KOICHI
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO., LTD.
Reel/Frame 047131/0980 →
Priority Claims (1)
JP 2016-065758 · Mar 29, 2016 · national
Continuity (2)
Continuation PCTJP2017012604 · Mar 28, 2017
Related Publication 20190025230A1 · Jan 24, 2019