SEMICONDUCTOR DEVICE
A semiconductor device includes: an insulating substrate including an insulating layer of which a first metal layer and a second metal layer are provided on both surfaces; a semiconductor element provided on the first metal layer; and an external connection terminal bonded to the first metal layer, the external connection terminal being electrically insulated from the second metal layer, wherein: the first metal layer includes a main portion being in contact with the insulating layer, the semiconductor element being provided in the main portion, and a protruding portion protruding from the main portion, the external connection terminal being bonded to the protruding portion; and at least a part of the protruding portion is provided to protrude from an outer peripheral edge of the insulating layer in a plan view of the insulating substrate.
1 . A semiconductor device comprising:
an insulating substrate including an insulating layer of which a first metal layer and a second metal layer are provided on both surfaces;
a semiconductor element provided on the first metal layer; and
an external connection terminal bonded to the first metal layer, the external connection terminal being electrically insulated from the second metal layer, wherein:
the first metal layer includes
a main portion being in contact with the insulating layer, the semiconductor element being provided in the main portion, and
a protruding portion protruding from the main portion, the external connection terminal being bonded to the protruding portion; and
at least a part of the protruding portion is provided to protrude from an outer peripheral edge of the insulating layer in a plan view of the insulating substrate.
2 . The semiconductor device according to claim 1 , wherein the protruding portion is located to be spaced apart from the outer peripheral edge of the insulating layer.
3 . The semiconductor device according to claim 1 , wherein the protruding portion protrudes from a peripheral side surface of the main portion.
4 . The semiconductor device according to claim 3 , wherein the protruding portion extends along a direction parallel to the insulating layer.
5 . The semiconductor device according to claim 1 , wherein, in a section of at least a part between a base end and a distal end of the protruding portion, a sectional area of the protruding portion increases toward the base end.
6 . The semiconductor device according to claim 1 , wherein a contact area between the insulating layer and the second metal layer is larger than a contact area between the insulating layer and the first metal layer.
7 . The semiconductor device according to claim 1 , wherein a contact area between the insulating layer and the first metal layer is larger than a contact area between the insulating layer and the second metal layer.
8 . The semiconductor device according to claim 1 , wherein a contact area between the insulating layer and the first metal layer is equal to a contact area between the insulating layer and the second metal layer.
9 . The semiconductor device according to claim 1 , further comprising an insulating sealing body configured to seal the semiconductor element, wherein:
the first metal layer is located inside the sealing body; and
the second metal layer is exposed to a surface of the sealing body.
10 . The semiconductor device according to claim 1 , wherein the insulating substrate is a direct bonded copper substrate.