Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
1. A method of manufacturing a laser diode device, the method comprising:
providing a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
forming an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
forming an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
forming a p-type cladding material overlying the active region, the p-type cladding material being free from AlGaN;
forming a p-type material overlying the p-type cladding material;
forming a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
forming a first facet on the first end; and
forming a second facet on the second end.
2. The method of claim 1 , wherein the active region comprises at least six quantum well regions.
3. The method of claim 1 , wherein the active region is configured operably for a forward voltage of less than 7 v for an output power of 60 mW and greater.
4. The method of claim 1 , wherein the plurality of barrier layers is at least about 2.5 nm in thickness.
5. The method of claim 1 , wherein each of the plurality of barrier layers is at least about 1.5 nm to about 2.5 nm in thickness.
6. The method of claim 1 , wherein the {20-21} crystalline surface region is off-cut less than less than +/−10 deg towards a c-plane and/or an a-plane.
7. The method of claim 1 , wherein one or more of the plurality of barrier layers is made of a material selected from GaN, InGaN, AlGaN, or InAlGaN.
8. The method of claim 1 , wherein each of the quantum wells comprises at least InGaN.
9. The method of claim 1 , wherein each of the plurality of barrier layers is substantially free from a dopant species.
10. A method of manufacturing a laser diode device, the method comprising:
providing a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
forming an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
forming an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of lnm and greater, and each of the plurality of barrier layers having a p-type characteristic and a thickness ranging from lnm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
forming a p-type cladding material overlying the active region, the p-type cladding material being substantially free from AlGaN;
forming a p-type material overlying the p-type cladding material;
forming a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end such that a first facet is formed on the first end, and a second facet is formed on the second end.
11. The method of claim 10 , wherein the active region is configured operably for a forward voltage of less than 7 v for an output power of 60 mW and greater.
12. The method of claim 10 , wherein each of the plurality of barrier layers is at least about 2.5 nm in thickness.
13. The method of claim 10 , wherein each of the plurality of barrier layers is at least about 1.5 nm to about 2.5 nm in thickness.
14. The method of claim 10 , wherein the {20-21} crystalline surface region is off-cut less than less than +/−8 deg towards a c-plane and/or an a-plane.
15. The method of claim 10 , wherein the active region comprises at least six quantum well regions.