Light-emitting diode with light extracting structure

1. A light-emitting diode (LED) comprising:

a semiconductor junction for emitting light upon application of electric current, the semiconductor junction comprising positive (p) and negative (n) regions; and

a structured metamaterial layer coupled to the semiconductor junction and supported by one of the p- or n-regions, the structured metamaterial layer comprising an optical surface for outputting at least a portion of the light emitted by the semiconductor junction, the structured metamaterial layer comprising at least one of: an array of tilted features having parallel sidewalls extending from the optical surface at an acute angle thereto; or an array of tilted voids having parallel sidewalls extending into the optical surface at an acute angle thereto, and configured to increase the portion of the light outputted by the optical surface.

2. The LED of claim 1 further comprising a substrate supporting the semiconductor junction, wherein the optical surface is a top surface of the one of the p- or n-regions.

3. The LED of claim 1 further comprising a substrate supporting the semiconductor junction and a dielectric layer on top of the structured metamaterial layer.

4. The LED of claim 3 , wherein the dielectric layer comprises a plurality of dielectric nanoantennas.

5. The LED of claim 1 , further comprising a substrate supporting the semiconductor junction.

6. The LED of claim 1 , wherein the array of tilted features or voids comprises at least one of: rectangular features or voids; annular features or voids; cross-shaped features or voids; or chevron-shaped features or voids, respectively.

7. The LED of claim 1 , wherein the tilted features or voids are inclined towards a center of the optical surface.

8. The LED of claim 1 , wherein at least one of: a number of tilted features in the array is between 4 and 16 features; a number of tilted voids in the array is between 4 and 16 voids; or a size of the array of features or voids is no greater than 6 microns by 6 microns.

9. A light-emitting diode (LED) array comprising:

a substrate;

an array of semiconductor junctions supported by the substrate and configured to emit light upon application of electric current; and

a structured metamaterial layer coupled to at least one of the array of semiconductor junctions, the structured metamaterial layer comprising an optical surface for outputting at least a portion of the light emitted thereby, the structured metamaterial layer comprising at least one of: an array of tilted features having parallel sidewalls extending from the optical surface at an acute angle thereto; or an array of tilted voids having parallel sidewalls extending into the optical surface at an acute angle thereto, and configured to increase the portion of the light outputted by the optical surface;

wherein the semiconductor junctions of the array each comprise positive (p) and negative (n) regions, wherein the optical surface is supported by one of the p- or n-regions.

10. The LED array of claim 9 , wherein the optical surface comprises a top surface of the one of the p- or n-regions.

11. The LED array of claim 9 further comprising a plurality of layers on top of the one of the p- or n-regions, wherein the optical surface comprises a top surface of the plurality of layers.

12. The LED array of claim 9 , wherein the features or voids are oriented to provide a pre-defined divergence of the portion of the light outputted by the optical surface.

13. The LED array of claim 9 , wherein the structural metamaterial layer comprises comprising a plurality of optical surfaces, wherein each optical surface of the plurality of optical surfaces is coupled to one of the array of semiconductor junctions for outputting at least a portion of the light emitted thereby, each optical surface of the plurality of optical surfaces comprising a grating structure configured to increase the portion of the light outputted thereby;

wherein the slanted features or voids of each optical surface of the plurality of optical surfaces are inclined towards a center of the LED array.

14. The LED array of claim 9 , wherein the optical surface is coupled to each semiconductor junction of the array.

15. A method of manufacturing a light-emitting diode (LED), the method comprising:

providing a semiconductor junction for emitting light;

providing a structured metamaterial layer comprising an optical surface for outputting at least a portion of the light, wherein the structured metamaterial layer is coupled to the semiconductor junction; and

forming, in the optical surface or on the optical surface, at least one of: an array of tilted features having parallel sidewalls extending from the optical surface at an acute angle thereto; or an array of tilted voids having parallel sidewalls extending into the optical surface at an acute angle thereto, and configured to increase the portion of the light outputted by the optical surface.

16. The method of claim 15 , wherein the forming is performed using nanoimprint lithography.