CONFIGURING AN EMITTER PATTERN FOR AN EMITTER ARRAY TO AVOID A POTENTIAL DISLOCATION LINE

1 . A die, comprising:

a plurality of adjacent emitters; and

a potential dislocation line,

wherein the plurality of adjacent emitters and the potential dislocation line are offset from each other within a range of angles based on a relative rotation of the plurality of adjacent emitters and the potential dislocation line.

2 . The die of claim 1 , wherein the relative rotation is a result of a rotation of a mask used to manufacture the plurality of adjacent emitters relative to the die.

3 . The die of claim 1 , wherein the relative rotation is a result of a rotation of the die relative to a mask used to manufacture the plurality of adjacent emitters.

4 . The die of claim 1 , wherein an angle, of the range of angles, is determined based on at least one of:

a diameter of emitters of the plurality of adjacent emitters,

a distance between the emitters of the plurality of adjacent emitters,

a distance from a first end of the plurality of adjacent emitters to a second end of the plurality of adjacent emitters, or

a distance between the plurality of adjacent emitters and another plurality of adjacent emitters.

5 . The die of claim 1 , wherein the range of angles is from one degree to 15 degrees (inclusive).

6 . The die of claim 1 , wherein the plurality of adjacent emitters is arranged in a regular two-dimensional pattern.

7 . The die of claim 1 , wherein the relative rotation causes less than a threshold quantity of emitters, of the plurality of adjacent emitters, to intersect the potential dislocation line.

8 . A vertical cavity surface emitting laser (VCSEL) array, comprising:

a plurality of adjacent VCSELs; and

a potential dislocation line,

wherein the plurality of adjacent VCSELs and the potential dislocation line are offset from each other based on a relative rotation of a die associated with the VCSEL array and the potential dislocation line.

9 . The VCSEL array of claim 8 , wherein the relative rotation is a result of the die being rotated relative to a mask associated with the VCSEL array.

10 . The VCSEL array of claim 8 , wherein the relative rotation is a result of a mask associated with the VCSEL array being rotated relative to the die.

11 . The VCSEL array of claim 8 , wherein the relative rotation prevents one dislocation from intersecting a threshold quantity of VCSELs, of the plurality of VCSELs, and prevents the threshold quantity of VCSELs from outputting less than 50 percent of an expected amount of power.

12 . The VCSEL array of claim 8 , wherein the potential dislocation line is associated with a crystallographic axis of the die.

13 . The VCSEL array of claim 8 , wherein an angle, of the range of angles, for the relative rotation is based on a quantity of VCSELs, of the plurality of VCSELs, to be offset from the potential dislocation line.

14 . The VCSEL array of claim 8 , wherein the relative rotation prevents a threshold quantity of VCSELs, of the plurality of VCSELs, from failing due to propagation of a defect along the potential dislocation line.

15 . A wafer, comprising:

a plurality of die that include a plurality of adjacent emitters; and

a potential dislocation line,

wherein the plurality of adjacent emitters and the potential dislocation line are offset from each other based on a relative rotation of the plurality of adjacent emitters and the potential dislocation line.

16 . The wafer of claim 15 , wherein the plurality of adjacent emitters and the plurality of die are offset by an angle within a range of angles,

wherein the angle is based on at least one of:

a dimension of emitters of the plurality of adjacent emitters,

a dimension of the plurality of adjacent emitters, or

a distance between the plurality of adjacent emitters and another plurality of adjacent emitters.

17 . The wafer of claim 15 , wherein the relative rotation reduces a likelihood that propagation of a defect along the potential dislocation line will cause a threshold quantity of emitters, of the plurality of adjacent emitters, to fail.

18 . The wafer of claim 15 , wherein the plurality of adjacent emitters form a row of emitters.

19 . The wafer of claim 15 , wherein the plurality of adjacent emitters form a column of emitters.

20 . The wafer of claim 15 , wherein the relative rotation causes less than a threshold quantity of emitters, of the plurality of adjacent emitters, to intersect the potential dislocation line.