Memory device interconnects and method of manufacture
An integrated circuit memory device, in one embodiment, includes a substrate having a plurality of bit lines. A first and second inter-level dielectric layer are successively disposed on the substrate. Each of a plurality of source lines and staggered bit line contacts extend through the first inter-level dielectric layer. Each of a plurality of source line vias and a plurality of staggered bit line vias extend through the second inter-level dielectric layer to each respective one of the plurality of source lines and the plurality of staggered bit line contacts. The source lines and staggered bit line contacts that extend through the first inter-level dielectric layer are formed together by a first set of fabrication processes. The source line vias and staggered bit line contacts that extend through the second inter-level dielectric layer are also formed together by a second set of fabrication processes.
1. An integrated circuit memory device comprising:
a substrate having a plurality of bit lines;
a first dielectric layer disposed on the substrate and on the plurality of bit lines;
a second dielectric layer disposed on the first dielectric layer;
an anti-reflective coating layer disposed on the second dielectric layer;
a plurality of source lines that extend through the first dielectric layer;
a plurality of source line vias that extend through the second dielectric layer to each respective one of the plurality of source lines;
a plurality of bit line contacts that extend through the first dielectric layer to each respective one of the plurality of bit lines, wherein the plurality of bit line contacts are staggered so that adjacent ones of the bit line contacts are not in a same row;
a plurality of bit line vias that extend through the second dielectric layer to each one of the plurality of bit line contacts, wherein the plurality of bit line vias are staggered so that adjacent ones of the bit line vias are not in a same row; and
a metallization layer coupled to one or more of the plurality of source line vias and one or more of the plurality of bit line vias.
2. The integrated circuit memory device of claim 1 , wherein the plurality of bit line contacts and the plurality of source lines are formed from a first metal layer.
3. The integrated circuit memory device of claim 2 , wherein the plurality of bit line vias and the plurality of source line vias are formed from a second metal layer.
4. The integrated circuit memory device of claim 1 , wherein the plurality of bit line contacts, the plurality of bit line vias, the plurality of source lines, and the plurality of source line vias are formed from a metal or metal alloy.
5. The integrated circuit memory device of claim 1 , wherein the plurality of bit line contacts, the plurality of bit line vias, the plurality of source lines, and the plurality of source line vias comprise one or more metals selected from the group consisting of tungsten, titanium, and titanium nitride.
6. The integrated circuit memory device of claim 1 , wherein each of the plurality of bit line contacts and each of the plurality of bit line vias are tapered.
7. The integrated circuit memory device of claim 1 , wherein each of the plurality of source lines and each of the plurality of source line vias are tapered.