IP Library Granted Patent US 10,741,490
Granted Patent B2
US 10,741,490 · App. 16/147,897 · Granted Aug 11, 2020

Device and package structure

Inventors: Hsien-Wei Chen (Hsinchu, TW); An-Jhih Su (Taoyuan, TW); Li-Hsien Huang (Hsinchu County, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01L23/5226H01L24/19H01L24/20H01L25/105H01L25/50H01L21/311H01L21/568H01L23/3128H01L25/0657H01L2224/04105H01L2224/12105H01L2224/32145H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2224/73267H01L2224/92244H01L2225/0651H01L2225/06568H01L2225/1035H01L2225/1041H01L2225/1058H01L2924/15311H01L2924/181
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,741,490
App. No.
16/147,897
Granted
Aug 11, 2020
Kind
B2
Abstract

Device, package structure and method of forming the same are disclosed. The device includes a die encapsulated by an encapsulant, a conductive structure aside the die, and a dielectric layer overlying the conductive structure. The conductive structure includes a through via in the encapsulant, a redistribution line layer overlying the through via, and a seed layer overlying the redistribution line layer. The dielectric layer includes an opening, wherein the opening exposes a surface of the conductive structure, the opening has a scallop sidewall, and an included angle between a bottom surface of the dielectric layer and a sidewall of the opening is larger than about 60 degrees.

Claims (32)

1. A package structure, comprising:

a die, encapsulated by an encapsulant;

a conductive structure disposed aside the die, wherein the conductive structure comprises a through via in the encapsulant;

a dielectric layer overlying the die and the conductive structure; and

a conductive connector, connected with the conductive structure and inlaid in the dielectric layer, wherein the conductive connector protrudes from the dielectric layer and penetrates through the dielectric layer to connect with the underlying conductive structure, an included angle between a bottom surface of the dielectric layer and an interface between the conductive connector and the dielectric layer is larger than about 60 degrees, and wherein the conductive connector extends into the encapsulant and physically contacts the through via.

2. The package structure according to claim 1 , wherein the conductive structure further comprises a seed layer overlying the through via, and the conductive connector physically contacts the seed layer.

3. The package structure according to claim 1 , further comprising another package structure connected to the conductive connector.

4. The package structure according to claim 1 , wherein the included angle ranges from about 65 degrees to about 90 degrees.

5. The package structure according to claim 1 , wherein the conductive connector physically contacts an upper sidewall and a top surface of the through via.

6. The package structure according to claim 1 , wherein the conductive structure further comprises a seed layer overlying the through via, and the conductive connector physically contacts the seed layer and an upper sidewall of the through via.

7. The package structure according to claim 1 , further comprising a redistribution structure connected with the through via, wherein the redistribution structure and the conductive connector are located at two opposite sides of the through via.

8. The package structure according to claim 7 , further comprising connector terminals connected to the redistribution structure.

9. The package structure according to claim 1 , further comprising a die attach film disposed between a backside of the die and the dielectric layer.

10. A device, comprising:

a die, encapsulated by an encapsulant;

a conductive structure aside the die, wherein the conductive structure comprises a through via in the encapsulant, a redistribution line layer overlying the through via, and a seed layer overlying the redistribution line layer,

a dielectric layer overlying the die and the encapsulant; and

a conductive connector, disposed on and connected with the conductive structure and penetrating through the dielectric layer, wherein the conductive connector has a scallop sidewall, and the conductive connector extends into the encapsulant and physically contacts the seed layer.

11. The device according to claim 10 , wherein the conductive connector penetrating through the seed layer reaching the redistribution line layer and the conductive connector physically contact the redistribution line layer and the seed layer.

12. The device according to claim 10 , further comprising a redistribution structure connected with the through via, wherein the redistribution structure and the conductive connector are located at two opposite sides of the through via.

13. The device according to claim 12 , wherein the redistribution structure comprises under-bump metallization (UBM) layers and connectors located on the UBM layers.

14. The device according to claim 10 , further comprising a package structure disposed on and electrically connected to the conductive connector.

15. A device, comprising:

a die, encapsulated by an encapsulant;

a conductive structure aside the die, wherein the conductive structure comprises a through via in the encapsulant and a seed layer on the through via;

a dielectric layer overlying the die and the encapsulant; and

a conductive connector, disposed on and connected with the conductive structure and penetrating through the dielectric layer, wherein the conductive connector has a scallop sidewall, and the conductive connector extends into the encapsulant and physically contacts the seed layer and the though via.

16. The device according to claim 15 , further comprising a die attach film disposed between a backside of the die and the dielectric layer.

17. The device according to claim 15 , wherein the conductive connector wraps around the seed layer and an upper sidewall of the through via.

18. The device according to claim 15 , further comprising a redistribution structure connected with the through via, wherein the redistribution structure and the conductive connector are located at two opposite sides of the through via.

19. The device according to claim 18 , wherein the redistribution structure comprises under-bump metallization (UBM) layers and connectors located on the UBM layers.

20. The device according to claim 15 , further comprising a package structure disposed on and electrically connected to the conductive connector.

Continuity (2)
Continuation 14724817 · May 29, 2015
Related Publication 20190035730A1 · Jan 31, 2019