Copper manganese sputtering target
A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400° C., allowing the copper material to cool to a temperature from about 325° C. to about 350° C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.
1. A method of forming a high strength copper manganese alloy, the method comprising:
heating a copper material including manganese to a temperature above 400° C., the copper material comprising from about 2 wt % to about 20 wt % manganese;
allowing the copper material to cool to a temperature from about 325° C. to about 350° C. to form a cooled copper material; and
extruding the cooled copper material with equal channel angular extrusion (ECAE) to form a cooled copper manganese alloy.
2. The method of claim 1 , wherein the copper material comprises from about 3 wt % to about 12 wt % manganese.
3. The method of claim 1 , wherein the copper material comprises from about 8 wt % to about 10 wt % manganese.
4. The method of claim 1 , wherein extruding the cooled copper material comprises at least 4 passes of equal channel angular extrusion.
5. The method of claim 1 , wherein the high strength copper manganese alloy has a mean grain size up to about 15 μm in diameter.
6. The method of claim 1 , wherein the high strength copper alloy has a mean grain size of less than about 1 μm in diameter.
7. The method of claim 1 , wherein the high strength copper manganese alloy has a mean grain size up to about 2 μm in diameter after heating to a temperature from about 400° C. to about 450° C. for at least one hour.
8. The method of claim 1 , wherein the high strength copper alloy has a mean grain size from about 12 μm in diameter to about 15 μm in diameter after heating to a temperature from about 500° C. to about 550° C. for at least one hour.
9. The method of claim 1 , wherein the high strength copper manganese alloy has a mean yield strength of between about 475 MPa and about 700 MPa.
10. The method of claim 1 , wherein the high strength copper manganese alloy has substantially refined secondary phases such that the secondary phases have a mean diameter that is at least about 1.5 times smaller than a mean diameter obtained by conventional thermo-mechanical processing methods.
11. The method of claim 1 , the method further comprising:
subjecting the cooled copper manganese alloy to a first rolling step,
heating the cooled copper manganese alloy to a temperature from about 400° C. to about 575° C. for at least 0.5 hours to form a heated copper manganese alloy, and
subjecting the heated copper manganese alloy to a second rolling step to form a hardened copper manganese alloy.
12. The method of claim 11 , wherein the hardened copper manganese alloy has a mean grain size from about 1.5 μm in diameter to about 15 μm in diameter.
13. A sputtering assembly comprising a sputtering target comprising:
a copper alloy with copper as a primary component and containing manganese, wherein the manganese is present at a weight percentage from about 2 wt % to about 20 wt % by weight of the copper alloy, and wherein the sputtering target has substantially refined secondary phases such that the secondary phases have a mean diameter that is at least about 1.5 times smaller than a mean diameter of an as-cast copper alloy.
14. The sputtering assembly of claim 13 , wherein the copper alloy comprises from about 3 wt % to about 12 wt % manganese.
15. The sputtering assembly of claim 13 , wherein the copper alloy comprises from about 8 wt % to about 10 wt % manganese.
16. The sputtering assembly of claim 13 , wherein the copper alloy has a mean grain size of up to about 15 μm in diameter.
17. The method of claim 13 , wherein the high strength copper alloy has a mean grain size of less than about 1 μm in diameter.
18. The sputtering assembly of claim 13 , wherein the copper alloy has a mean grain size up to about 2 μm in diameter after heating to a temperature from about 400° C. to about 450° C. for at least one hour.
19. The sputtering assembly of claim 13 , wherein the copper alloy has a mean grain size from about 12 μm in diameter to about 15 μm in diameter after heating to a temperature from about 500° C. to about 550° C. for at least one hour.
20. The sputtering assembly of claim 13 , wherein the copper alloy has a mean yield strength of between about 475 MPa and about 700 MPa.
21. The sputtering assembly of claim 13 , further comprising a backing plate connected to a back surface of the sputtering target.
22. The sputtering assembly of claim 20 , wherein the backing plate is diffusion bonded to the back surface of the sputtering target.