IP Library Granted Patent US 10,916,939
Granted Patent B2
US 10,916,939 · App. 16/149,614 · Granted Feb 9, 2021

Low leakage transient overvoltage protection circuit using a series connected metal oxide varistor (MOV) and silicon controlled rectifier (SCR)

Inventors: Romain Pichon (Reugny, FR); Yannick Hague (Mettray, FR); Sean Choi (Seoul, KP)
Assignees: STMicroelectronics (Tours) SAS; STMicroelectronics Asia Pacific Pte Ltd
H02H9/046H01C7/108H01C7/12H02H9/005H02H9/042H02H9/044
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Quick Facts
Patent No.
US 10,916,939
App. No.
16/149,614
Granted
Feb 9, 2021
Kind
B2
Abstract

Transient overvoltage suppression is provided by discharging through a Metal Oxide Varistor (MOV) and Silicon Controlled Rectifier (SCR) which are connected in series between power supply lines. The SCR has a gate that receives a trigger signal generated by a triggering circuit coupled to the power supply lines. A trigger voltage of the triggering circuit is set by a Transil™ avalanche diode.

Claims (25)

1. A circuit, comprising:

a first power supply line and a second power supply line configured to receive a direct current (DC) voltage;

a Metal Oxide Varistor (MOV) connected between the first power supply line and a first node;

a Silicon Controlled Rectifier (SCR) having an anode terminal connected to the first node and a cathode terminal connected to the second power supply line, the SCR having a gate terminal; and

a trigger circuit connected between the first and second power supply lines and having an output connected to the gate terminal of the SCR, wherein the triggering circuit comprises:

a unidirectional Transil™ avalanche diode having a cathode directly electrically connected to the first power supply line and an anode directly electrically connected to an intermediate node;

a first resistor having a first terminal directly electrically connected to the intermediate node and a second terminal directly electrically connected to the second power supply line; and

a second resistor having a first terminal directly electrically connected to the intermediate node and a second terminal directly electrically connected to the gate terminal;

wherein the trigger circuit has a trigger voltage for detecting a transient voltage surge of the DC voltage that is set by the unidirectional Transil™ avalanche diode.

2. The circuit of claim 1 , wherein the gate terminal is a cathode gate terminal.

3. The circuit of claim 1 , wherein a break down voltage of the unidirectional Transil™ avalanche diode is substantially equal to a voltage drop across the MOV.

4. The circuit of claim 1 , wherein the first resistor and second resistor each have a resistance that is greater than a kilohm.

5. A circuit, comprising:

a first power supply line and a second power supply line configured to receive a direct current (DC) voltage;

a Metal Oxide Varistor (MOV) connected between the first power supply line and a first node;

a Silicon Controlled Rectifier (SCR) having an anode terminal connected to the first node and a cathode terminal connected to the second power supply line, the SCR having a gate terminal; and

a trigger circuit, comprising:

a unidirectional avalanche diode having a cathode directly electrically connected to the first power supply line and an anode directly electrically connected to an intermediate node;

a first resistor having a first terminal directly electrically connected to the intermediate node and a second terminal directly electrically connected to the second power supply line; and

a second resistor having a first terminal directly electrically connected to the intermediate node and a second terminal directly electrically connected to the gate terminal;

wherein the trigger circuit has a trigger voltage set by the unidirectional avalanche diode, the trigger circuit configured to generate a trigger signal at the gate terminal to control turn on of the SCR in response to a transient overvoltage condition of the DC voltage which exceeds the trigger voltage.

6. The circuit of claim 5 , wherein the unidirectional avalanche diode is a Transil™ avalanche diode.

7. The circuit of claim 5 , wherein the gate terminal is a cathode gate terminal.

8. The circuit of claim 5 , wherein a break down voltage of the unidirectional avalanche diode is substantially equal to a voltage drop across the MOV.

9. The circuit of claim 5 , wherein the first resistor and second resistor each have a resistance that is greater than a kilohm.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2018
From: PICHON, ROMAIN; HAGUE, YANNICK
To: STMICROELECTRONICS (TOURS) SAS
Reel/Frame 047038/0623 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2018
From: CHOI, SEAN
To: STMICROELECTRONICS ASIA PACIFIC PTE LTD
Reel/Frame 047182/0498 →
Continuity (1)
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