Semiconductor device

1. A semiconductor device, comprising:

a semiconductor substrate;

an interlayer insulating film located on the semiconductor substrate;

a contact plug constituted of a metal, penetrating the interlayer insulating film, and being in contact with the semiconductor substrate;

a first metal layer covering a surface of the interlayer insulating film and a surface of the contact plug;

a protective insulating film covering a part of a surface of the first metal layer; and

a second metal layer covering the surface of the first metal layer, being in contact with an edge portion of the protective insulating film, and constituted of a metal different from that of the first metal layer,

wherein

the semiconductor device comprises a peripheral region, an active region, and an intermediate region in a view along a thickness direction of the semiconductor device,

the peripheral region is a region in which the protective insulating film is located;

the active region is a region in which a plurality of first parts of the contact plug is located; and

the intermediate region is a region which is located between the peripheral region and the active region and in which at least one second part of the contact plug is located,

the first parts extend toward the edge portion of the protective insulating film, and

the at least one second part extends along the edge portion of the protective insulating film.

2. The semiconductor device of claim 1 , wherein a plurality of the second parts of the contact plug is located in the intermediate region.