Elastic wave device and method for manufacturing the same

1. An elastic wave device comprising:

a piezoelectric substrate;

first, second, and third IDT electrodes that are provided on the piezoelectric substrate; and

a dielectric film that is provided on the piezoelectric substrate such that the dielectric film covers the first, second, and third IDT electrodes, and such that a thickness of the dielectric film in a region in which the dielectric film covers the first IDT electrode is different from a thickness of the dielectric film in a region in which the dielectric film covers the second IDT electrode and a thickness of the dielectric film in a region in which the dielectric film covers the third IDT electrode; wherein

first, second, and third elastic wave elements that include the first, second, and third IDT electrodes and the dielectric film are provided; and

when a thickness is converted into a density equivalent thickness on an assumption that materials of the first, second, and third IDT electrodes have a same or substantially a same density, the density equivalent thicknesses of the first and second IDT electrodes are equal or substantially equal to each other, and the density equivalent thickness of the third IDT electrode is different from each of the density equivalent thicknesses of the first and second IDT electrodes.

2. The elastic wave device according to claim 1 , wherein the first, second, and third IDT electrodes have electrode finger pitches that are different from one another.

3. The elastic wave device according to claim 1 , wherein, when the density equivalent thickness of the dielectric film is a thickness converted on an assumption that materials of the dielectric film and the first, second, and third IDT electrodes have the same or substantially the same density, a ratio of a sum of the density equivalent thickness of the dielectric film located on the first IDT electrode and the density equivalent thickness of the first IDT electrode to the electrode finger pitch of the first IDT electrode, a ratio of a sum of the density equivalent thickness of the dielectric film located on the second IDT electrode and the density equivalent thickness of the second IDT electrode to the electrode finger pitch of the second IDT electrode, and a ratio of a sum of the density equivalent thickness of the dielectric film located on the third IDT electrode and the density equivalent thickness of the third IDT electrode to the electrode finger pitch of the third IDT electrode are different from one another.

4. The elastic wave device according to claim 1 , wherein the first, second, and third elastic wave elements are first, second, and third elastic wave filters.

5. The elastic wave device according to claim 1 , wherein the materials of the first and second IDT electrodes and the material of the third IDT electrode are different from each other.

6. A method for manufacturing an elastic wave device comprising:

preparing a piezoelectric substrate;

providing first and second IDT electrodes on the piezoelectric substrate;

providing a third IDT electrode on the piezoelectric substrate; and

forming a dielectric film on the piezoelectric substrate such that the dielectric film covers the first, second, and third IDT electrodes and such that a thickness of the dielectric film in a region in which the dielectric film covers the first IDT electrode is different from a thickness of the dielectric film in a region in which the dielectric film covers the second IDT electrode and a thickness of the dielectric film in a region in which the dielectric film covers the third IDT electrode; wherein

first, second, and third elastic wave elements that include the first, second and third IDT electrodes and the dielectric film are formed; and

in the step of providing the first and second IDT electrodes and in the step of providing the third IDT electrode, when a thickness is converted into a density equivalent thickness on an assumption that materials of the first, second, and third IDT electrodes have the same or substantially the same density, the density equivalent thicknesses of the first and second IDT electrodes are set to be equal or substantially equal to each other, and the density equivalent thickness of the third IDT electrode is set to be different from each of the density equivalent thicknesses of the first and second IDT electrodes.

7. The method for manufacturing an elastic wave device according to claim 6 , wherein, in the step of providing the first and second IDT electrodes and in the step of providing the third IDT electrode, the first, second, and third IDT electrodes have electrode finger pitches that are different from one another.

8. The method for manufacturing an elastic wave device according to claim 6 , wherein, in the step of forming the dielectric film, after a first dielectric film made of a same dielectric material as the dielectric film has been formed so as to cover the first, second, and third IDT electrodes, a resist layer is formed on the first dielectric film in a region in which the first dielectric film covers the first IDT electrode, and the first dielectric film is etched.

9. The method for manufacturing an elastic wave device according to claim 6 , wherein, in the step of forming the dielectric film, after a first dielectric film made of a same dielectric material as the dielectric film has been formed so as to cover the first, second, and third IDT electrodes, a resist layer is formed on the first dielectric film in a region in which the first dielectric film covers the second and third IDT electrodes, and in addition, a second dielectric film made of a same dielectric material as the first dielectric film is formed on the first dielectric film, and then the resist layer is removed.

10. The method for manufacturing an elastic wave device according to claim 6 , wherein, when the density equivalent thickness of the dielectric film is a thickness converted on an assumption that materials of the dielectric film and the first to third IDT electrodes have a same or substantially a same density, in the step providing the first and second IDT electrodes, in the step of providing the third IDT electrode, and in the step of providing the dielectric film, a ratio of a sum of the density equivalent thickness of the dielectric film located on the first IDT electrode and the density equivalent thickness of the first IDT electrode to the electrode finger pitch of the first IDT electrode, a ratio of a sum of the density equivalent thickness of the dielectric film located on the second IDT electrode and the density equivalent thickness of the second IDT electrode to the electrode finger pitch of the second IDT electrode, and a ratio of a sum of the density equivalent thickness of the dielectric film located on the third IDT electrode and the density equivalent thickness of the third IDT electrode to the electrode finger pitch of the third IDT electrode are set to be different from one another.

11. The method for manufacturing an elastic wave device according to claim 6 , wherein the first, second, and third elastic wave elements are first, second, and third elastic wave filters.

12. The method for manufacturing an elastic wave device according to of claim 6 , wherein the materials of the first and second IDT electrodes and the material of the third IDT electrode are different from each other.