IP Library Granted Patent US 10,564,864
Granted Patent B1
US 10,564,864 · App. 16/151,750 · Granted Feb 18, 2020

Method for estimating data retention time in a solid state drive

Inventors: Justin L. Ha (Hayward, CA); Frederick K. H. Lee (Mountain View, CA); Seungjune Jeon (Santa Clara, CA)
Assignee: DELL PRODUCTS L.P.
G06F3/0617G06F3/0604G06F3/0659G06F3/0679G11C16/34
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Quick Facts
Patent No.
US 10,564,864
App. No.
16/151,750
Granted
Feb 18, 2020
Kind
B1
Abstract

A system for controlling a solid state drive is disclosed that includes a plurality of NAND memory devices, each NAND memory device further comprising at least one die, a plurality of blocks associated with each of the dies, and a plurality of pages associated with each of the blocks. A pseudo clock system configured to determine a pseudo clock value for each of the NAND memory devices. An effective retention time system coupled to the plurality of NAND memory devices and configured to determine a maximum effective retention time for each of the NAND memory devices as a function of the pseudo clock value for the NAND memory device.

Claims (35)

1. A system for controlling a solid state drive, comprising:

a plurality of NAND memory devices, each NAND memory device further comprising at least one die, a plurality of blocks associated with each of the dies, and a plurality of pages associated with each of the blocks;

a pseudo clock system configured to determine a pseudo clock value for each of the NAND memory devices; and

an effective retention time system coupled to the plurality of NAND memory devices and configured to determine a maximum effective retention time for each of the NAND memory devices as a function of the pseudo clock value for the NAND memory device.

2. The system of claim 1 further comprising a read trim analysis system configured to determine an optimal read trim for a NAND memory device.

3. The system of claim 2 further comprising an error correction code system configured to determine an error correction code value for one or more of the pages of each of the NAND memory devices, and wherein the read trim analysis system is configured to receive the error correction code value and to determine the optimal read trim using the error correction code value.

4. The system of claim 1 wherein the effective retention time system is configured to determine a retention time for each page of a plurality of pages of a selected block.

5. The system of claim 1 wherein the effective retention time system is configured to determine a retention time for each page of a plurality of pages of a selected block and to statistically combine the retention time for each page of the selected block to obtain an effective retention time for the selected block.

6. The system of claim 1 wherein the pseudo clock system is further configured to determine a pseudo clock value for each block of a plurality of blocks of a selected NAND memory device.

7. The system of claim 1 wherein the pseudo clock system is further configured to determine a pseudo clock value for each block of a plurality of blocks of a selected NAND memory device and to statistically combine the pseudo clock values to obtain a NAND memory device pseudo clock value.

8. A method for controlling a solid state drive, comprising:

selecting a number of blocks of a NAND memory device for data retention time estimation;

using a predetermined set of read trims to generate a plurality of retention times for each of the blocks; and

generating a pseudo clock value based on the read trims that result in a lowest retention time for each of the blocks.

9. The method of claim 8 wherein using the predetermined set of read trims to generate the plurality of retention times for each of the blocks comprises using the predetermined set of read trims to generate a plurality of retention times for each of a plurality of pages for one or more of the blocks.

10. The method of claim 8 further comprising statistically combining the plurality of retention times for each of the blocks.

11. A system for controlling a solid state drive, comprising:

a plurality of NAND memory devices, each NAND memory device further comprising at least one die, a plurality of blocks associated with each of the dies, and a plurality of pages associated with each of the blocks:

a pseudo clock system configured to determine a pseudo clock value for each of the NAND memory devices;

an effective retention time system coupled to the plurality of NAND memory devices and configured to determine a maximum effective retention time for each of the NAND memory devices as a function of the pseudo clock value for the NAND memory device;

a read trim analysis system configured to determine an optimal read trim for a NAND memory device; and

wherein the effective retention time system is configured to determine a retention time for each page of a plurality of pages of a selected block.

12. The system of claim 11 further comprising an error correction code system configured to determine an error correction code value for one or more of the pages of each of the NAND memory devices, and wherein the read trim analysis system is configured to receive the error correction code value and to determine the optimal read trim using the error correction code value.

13. The system of claim 11 wherein the effective retention time system is configured to determine a retention time for each page of a plurality of pages of a selected block and to statistically combine the retention time for each page of the selected block to obtain an effective retention time for the selected block.

14. The system of claim 11 wherein the pseudo clock system is further configured to determine a pseudo clock value for each block of a plurality of blocks of a selected NAND memory device.

15. The system of claim 11 wherein the pseudo clock system is further configured to determine a pseudo clock value for each block of a plurality of blocks of a selected NAND memory device and to statistically combine the pseudo clock values to obtain a NAND memory device pseudo clock value.

16. The system of claim 1 further comprising a read trim analysis system igured to determine an optimal read trim for a NAND memory device, wherein the effective retention time system is configured to determine a retention time for each page of a plurality of pages of a selected block and to statistically combine the retention time for each page of the selected block to obtain an effective retention time for the selected block.

17. The system of claim 1 further comprising a read trim analysis system configured to determine an optimal read trim for a NAND memory device, wherein the pseudo clock system is further configured to determine a pseudo clock value for each block of a plurality of blocks of a selected NAND memory device.

18. The system of claim 1 further comprising a read trim analysis system configured to determine an optimal read trim for a NAND memory device, wherein the pseudo clock system is further configured to determine a pseudo clock value for each block of a plurality of blocks of a selected NAND memory device and to statistically combine the pseudo clock values to obtain a NAND memory device pseudo clock value.

19. The system of claim 1 further comprising:

a read trim analysis system configured to determine an optimal read trim for a NAND memory device;

an error correction code system configured to determine an error correction code value for one or more of the pages of each of the NAND memory devices, and wherein the read trim analysis system is configured to receive the error correction code value and to determine the optimal read trim using the error correction code value and the effective retention time system is configured to determine a retention time for each page of a plurality of pages of a selected block.

20. The system of claim 1 further comprising:

a read trim analysis system configured to determine an optimal read trim for a NAND memory device;

an error correction code system configured to determine an error correction code value for one or more of the pages of each of the NAND memory devices, and wherein the read trim analysis system is configured to receive the error correction code value and to determine the optimal read trim using the error correction code value and the effective retention time system is configured to determine a retention time for each page of a plurality of pages of a selected block and to statistically combine the retention time for each page of the selected block to obtain an effective retention time for the selected block.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL/FRAME (053546/0001) Recorded Jun 23, 2022
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
To: DELL MARKETING L.P. (ON BEHALF OF ITSELF AND AS SUCCESSOR-IN-INTEREST TO CREDANT TECHNOLOGIES, INC.); DELL INTERNATIONAL L.L.C.; DELL PRODUCTS L.P.; DELL USA L.P.; EMC CORPORATION; DELL MARKETING CORPORATION (SUCCESSOR-IN-INTEREST TO FORCE10 NETWORKS, INC. AND WYSE TECHNOLOGY L.L.C.); EMC IP HOLDING COMPANY LLC
Reel/Frame 071642/0001 →
SECURITY AGREEMENT Recorded Oct 1, 2021
From: DELL PRODUCTS, L.P.; EMC IP HOLDING COMPANY LLC
To: CREDIT SUISSE AG, CAYMAN ISLANDS BRANCH
Reel/Frame 057682/0830 →
SECURITY AGREEMENT Recorded Apr 22, 2020
From: CREDANT TECHNOLOGIES INC.; DELL INTERNATIONAL L.L.C.; DELL MARKETING L.P.; DELL PRODUCTS L.P.; DELL USA L.P.; EMC CORPORATION; FORCE10 NETWORKS, INC.; WYSE TECHNOLOGY L.L.C.; EMC IP HOLDING COMPANY LLC
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.
Reel/Frame 053546/0001 →
SECURITY AGREEMENT Recorded Mar 21, 2019
From: CREDANT TECHNOLOGIES, INC.; DELL INTERNATIONAL L.L.C.; DELL MARKETING L.P.; DELL PRODUCTS L.P.; DELL USA L.P.; EMC CORPORATION; FORCE10 NETWORKS, INC.; WYSE TECHNOLOGY L.L.C.; EMC IP HOLDING COMPANY LLC
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.
Reel/Frame 049452/0223 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2018
From: HA, JUSTIN L.; LEE, FREDERICK K.H.; JEON, SEUNGJUNE
To: DELL PRODUCTS L.P.
Reel/Frame 047069/0381 →
Cited By (2)
US 12,386,738 US 12,547,344