IP Library Granted Patent US 10,763,798
Granted Patent B2
US 10,763,798 · App. 16/156,899 · Granted Sep 1, 2020

Variable impedance match and variable harmonic terminations for different modes and frequency bands

Inventors: Gary Frederick Kaatz (Barrington, IL); Chris Olson (Palatine, IL)
Assignee: pSemi Corporation
H03F1/565H03F1/3205H03F3/193H03F3/217H03F3/607H03H7/40H03H7/0123
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Quick Facts
Patent No.
US 10,763,798
App. No.
16/156,899
Filed
Oct 10, 2018
Granted
Sep 1, 2020
Kind
B2
Art Unit
2843
USPC
330/286
Abstract

An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.

Claims (30)

1. An arrangement configured to receive and amplify a first signal, the arrangement comprising:

an amplifier having an amplifier output terminal, the amplifier configured to generate a second signal by amplifying the first signal;

two or more shunt harmonic terminations, configured to be operatively connected between the amplifier output terminal and a reference voltage, and

one or more switches operatively connected to the two or more shunt harmonic terminations,

wherein:

the one or more switches are configured to selectively decouple the amplifier output terminal from the two or more shunt harmonic terminations;

a switch of the one or more switches is configured to selectively decouple the amplifier output terminal from either one of at least one of the two or more shunt harmonic terminations, and including a configuration where the amplifier output terminal is decoupled from all of the at least two shunt harmonic terminations;

a shunt harmonic termination of the two or more shunt harmonic terminations comprises variable elements; and

each of the two or more shunt harmonic terminations is configured to resonate at a corresponding harmonic resonant frequency.

2. The arrangement according to claim 1 , wherein the one or more switches have an ON or OFF state, the ON or OFF state being in correspondence of one of: a) a modulation scheme of the first signal, b) a frequency of operation of the first signal, and c) a desired class of operation of the amplifier.

3. The arrangement according to claim 2 , further comprising an impedance matching network coupled to at least one switch of the one or more switches.

4. The arrangement according to claim 3 , wherein the amplifier is selected from the group consisting of: a) a stacked arrangement of power amplifiers (PA), and b) a scalable periphery amplifier.

5. The arrangement according to claim 3 , wherein one or more switches of the one or more switches are constructed using stacked FETs.

6. The arrangement according to claim 2 , wherein the amplifier is selected from the group consisting of: a) a stacked arrangement of power amplifiers (PA), and b) a scalable periphery amplifier.

7. The arrangement according to claim 2 , wherein one or more switches of the one or more switches are constructed using stacked FETs.

8. The arrangement according to claim 1 , further comprising a variable impedance matching network operatively coupled to the amplifier output terminal and configured to match an impedance at the output terminal of the amplifier to a load impedance coupled to the output of the variable impedance matching network.

9. The arrangement according to claim 8 , wherein the one or more switches have an ON or OFF state, the ON or OFF state being in correspondence of one of: a) a modulation scheme of the first signal, b) a frequency of operation of the first signal, and c) a desired class of operation of the amplifier.

10. The arrangement according to claim 9 , wherein the amplifier is selected from the group consisting of: a) a stacked arrangement of power amplifiers (PA), and b) a scalable periphery amplifier.

11. The arrangement according to claim 9 , wherein one or more switches of the one or more switches are constructed using stacked FETs.

12. The arrangement according to claim 1 , wherein at least one shunt harmonic termination of the one or more shunt harmonic terminations is tunable.

13. The arrangement of claim 1 , wherein the operatively connected between the amplifier output terminal consists of being directly connected to the amplifier output terminal at one end and directly connected to the reference voltage at the other end.

14. An arrangement configured to receive and amplify a first signal, the arrangement comprising:

an amplifier having an amplifier output terminal, the amplifier configured to generate a second signal by amplifying the first signal;

two or more shunt second harmonic terminations, configured to be operatively connected between the amplifier output terminal and a reference voltage, and

one or more switches operatively connected to the two or more shunt second harmonic terminations,

wherein:

the one or more switches are configured to selectively decouple the amplifier output terminal from the two or more second shunt harmonic terminations;

a switch of the one or more switches is configured to selectively decouple the amplifier output terminal from either one of the two or more shunt second harmonic terminations;

a shunt second harmonic termination of the two or more shunt second harmonic terminations comprises variable elements; and

each of the two or more shunt second harmonic terminations is configured to resonate at a corresponding second harmonic resonant frequency.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 3, 2025
From: KAATZ, GARY FREDERICK; OLSON, CHRIS
To: PEREGRINE SEMICONDUCTOR CORPORATION
Reel/Frame 071605/0099 →
CHANGE OF NAME Recorded Jul 3, 2025
From: PEREGRINE SEMICONDUCTOR CORPORATION
To: PSEMI CORPORATION
Reel/Frame 071818/0435 →
Continuity (3)
Continuation 15422282 · Feb 1, 2017
Continuation 13797686 · Mar 12, 2013
Related Publication 20190115879A1 · Apr 18, 2019
Cited By (1)
US 12,719,415