Organic light-emitting display panel and display device with earth metal dopants

1. An organic light-emitting display panel, comprising:

an array substrate comprising a plurality of driving elements;

a plurality of organic light-emitting components corresponding to the plurality of driving elements, wherein each of the plurality of organic light-emitting components comprises an anode, a cathode and an organic functional layer disposed between the anode and the cathode, wherein the organic functional layer comprises an organic light-emitting layer, a first electron transmission layer disposed between the cathode and the organic light-emitting layer, and a hole injection layer disposed between the anode and the organic light-emitting layer,

wherein the first electron transmission layer comprises an electron transmission matrix and a first dopant, wherein the first dopant comprises an alkaline earth metal element or a rare earth metal element, and the hole injection layer comprises a hole injection matrix and a second dopant;

a lowest unoccupied molecular orbital of the electron transmission matrix in the first electron transmission layer LUMO1 and a lowest unoccupied molecular orbital of a host material in the organic light-emitting layer LUMO4 satisfy: |LUMO1−LUMO4|<1.7 eV,

a highest occupied molecular orbital of a hole injection matrix in the hole injection layer HOMO5 and a highest occupied molecular orbital of the host material in the organic light-emitting layer HOMO4 satisfy: |HOMO5−HOMO4|<1 eV,

a work function φ1 of the first dopant is smaller than a work function φ4 of the cathode,

the second dopant is an inorganic material, and a work function φ2 of the second dopant is greater than a work function φ3 of the anode,

the organic functional layer further comprises a second electron transmission layer disposed between the first electron transmission layer and the organic light-emitting layer, and the second electron transmission is undoped by the first dopant,

a highest occupied molecular orbital of an electron transmission matrix in the second electron transmission layer HOMO2 and the highest occupied molecular orbital of the host material in the organic light-emitting layer HOMO4 satisfy: |HOMO2−HOMO4|<1 eV,

the organic functional layer further comprises a third electron transmission layer disposed between the first electron transmission layer and the second electron transmission layer,

the third electron transmission layer contains the first dopant, and a doping concentration of the first dopant in the third electron transmission layer is smaller than a doping concentration of the first dopant in the first electron transmission layer, and

a material of an electron transmission matrix in the third electron transmission layer is a same material as a material of an electron transmission matrix in the second electron transmission layer;

wherein the organic functional layer further comprises a first hole transmission layer located between the hole injection layer and the organic light-emitting layer, and

wherein a highest occupied molecular orbital of a hole transmission matrix in the first hole transmission layer HOMO6 and the highest occupied molecular orbital of the host material in the organic light-emitting layer HOMO4 satisfy: |HOMO6−HOMO4|<0.8 eV;

wherein the first hole transmission layer and the second electron transmission layer are in direct contact with the organic light-emitting layer, and a hole mobility in the first hole transmission layer and an electron mobility in the second electron transmission layer satisfy:

|log 10 [ Hm (HTL1)]−log 10 [ Em (ETL2)]|<4.

2. The organic light-emitting display panel according to claim 1 , wherein a concentration of the first dopant at a side of the third electron transmission layer close to the first electron transmission layer is greater than a concentration of the first dopant at a side of the third electron transmission layer away from the first electron transmission layer.

3. The organic light-emitting display panel according to claim 2 , wherein the material of the electron transmission matrix in the third electron transmission layer is a same material as a material of the electron transmission matrix in the first electron transmission layer.

4. The organic light-emitting display panel according to claim 1 , wherein the organic functional layer further comprises a second hole transmission layer located between the hole injection layer and the first hole transmission layer.

5. The organic light-emitting display panel according to claim 4 , wherein the second hole transmission layer contains the second dopant, and a doping concentration of the second dopant in the second hole transmission layer is smaller than a doping concentration of the second dopant in the hole injection layer.

6. The organic light-emitting display panel according to claim 4 , wherein the second hole transmission layer contains the second dopant, and

wherein a concentration of the second dopant at a side of the second hole transmission layer close to the hole injection layer is greater than a concentration of the second dopant at a side of the second hole transmission layer away from the hole injection layer.

7. The organic light-emitting display panel according to claim 4 , wherein a material of a hole transmission matrix in the second hole transmission layer is a same material as a material of the hole injection matrix in the hole injection layer.

8. The organic light-emitting display panel according to claim 4 , wherein a thickness d 6 of the second hole transmission layer and a thickness d 2 of the second electron transmission layer satisfy: d 6 >6d 2 .

9. The organic light-emitting display panel according to claim 1 , wherein the first dopant is doped in the first electron transmission layer in a volume percentage of 0.5%-7%.

10. The organic light-emitting display panel according to claim 1 , wherein the first dopant comprises at least one of Mg, Ga, Yb, Sm, Tm, Y, Gd or Lu.

11. The organic light-emitting display panel according to claim 1 , wherein the first dopant is an alkaline earth elementary metal or a rare earth elementary metal.

12. The organic light-emitting display panel according to claim 1 , wherein the first dopant is a metallic compound.

13. The organic light-emitting display panel according to claim 1 , wherein the second dopant is a P-type dopant having a lowest occupied molecular orbital LUMO deeper than 4.5 eV, and the second dopant is doped in the hole injection layer in a volume percentage of 0.2% to 5%.

14. An organic light-emitting display device, comprising the organic light-emitting display panel according to claim 1 .

15. An organic light-emitting display panel, comprising:

an array substrate comprising a plurality of driving elements;

a plurality of organic light-emitting components corresponding to the plurality of driving elements, wherein each of the plurality of organic light-emitting components comprises an anode, a cathode and an organic functional layer disposed between the anode and the cathode, wherein the organic functional layer comprises an organic light-emitting layer, a first electron transmission layer disposed between the cathode and the organic light-emitting layer, and a hole injection layer disposed between the anode and the organic light-emitting layer,

wherein the first electron transmission layer comprises an electron transmission matrix and a first dopant, wherein the first dopant comprises an alkaline earth metal element or a rare earth metal element, and the hole injection layer comprises a hole injection matrix and a second dopant;

a lowest unoccupied molecular orbital of the electron transmission matrix in the first electron transmission layer LUMO1 and a lowest unoccupied molecular orbital of a host material in the organic light-emitting layer LUMO4 satisfy: |LUMO1−LUMO4|<1.7 eV,

a highest occupied molecular orbital of a hole injection matrix in the hole injection layer HOMO5 and a highest occupied molecular orbital of the host material in the organic light-emitting layer HOMO4 satisfy: |HOMO5−HOMO4|<1 eV,

a work function φ1 of the first dopant is smaller than a work function φ4 of the cathode,

the second dopant is an organic material, and a lowest unoccupied molecular orbital LUMO of the second dopant and the work function φ3 of the anode satisfy |LUMO−φ3|<0.8 eV,

the organic functional layer further comprises a second electron transmission layer disposed between the first electron transmission layer and the organic light-emitting layer, and the second electron transmission is undoped by the first dopant,

a highest occupied molecular orbital of an electron transmission matrix in the second electron transmission layer HOMO2 and the highest occupied molecular orbital of the host material in the organic light-emitting layer HOMO4 satisfy: |HOMO2−HOMO4|<1 eV,

the organic functional layer further comprises a third electron transmission layer disposed between the first electron transmission layer and the second electron transmission layer,

the third electron transmission layer contains the first dopant, and a doping concentration of the first dopant in the third electron transmission layer is smaller than a doping concentration of the first dopant in the first electron transmission layer,

a material of an electron transmission matrix in the third electron transmission layer is a same material as a material of an electron transmission matrix in the second electron transmission layer;

wherein the organic functional layer further comprises a first hole transmission layer located between the hole injection layer and the organic light-emitting layer, and

wherein a highest occupied molecular orbital of a hole transmission matrix in the first hole transmission layer HOMO6 and the highest occupied molecular orbital of the host material in the organic light-emitting layer HOMO4 satisfy: |HOMO6−HOMO4|<0.8 eV;

wherein the first hole transmission layer and the second electron transmission layer are in direct contact with the organic light-emitting layer, and a hole mobility in the first hole transmission layer and an electron mobility in the second electron transmission layer satisfy:

|log 10 [ Hm (HTL1)]−log 10 [ Em (ETL2)]|<4.