Semiconductor light-emitting device
A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.
1. A semiconductor light-emitting device, comprising:
a substrate;
a semiconductor stack on the substrate, and having a first width, an upper surface, a first side surface and a second side surface opposite to the first side surface;
a contacting structure, between the substrate and the semiconductor stack, having a side wall;
a first electrode on the upper surface;
a second electrode having a first portion on the upper surface;
a first adhesive layer covering the side wall and having a second width larger than the first width; and
an insulating layer between the semiconductor stack and the second electrode,
wherein the substrate has a portion not overlapped with the semiconductor stack, the insulating layer and the second electrode in a vertical direction.
2. The semiconductor light-emitting device according to claim 1 , wherein the first adhesive layer comprises IZO, ITO, InO, SnO, CTO, ATO, AZO, ZTO, ZnO or GaP.
3. The semiconductor light-emitting device according to claim 1 , wherein the first electrode comprises a first extending portion comprising metal.
4. The semiconductor light-emitting device according to claim 3 , wherein the insulating layer has a first part on the first extending portion and a second part covering the first side surface.
5. The semiconductor light-emitting device according to claim 3 , wherein the first electrode further comprises:
a first connecting portion on the first extending portion; and
a first bonding portion on the first connecting portion.
6. The semiconductor light-emitting device according to claim 5 , wherein the first bonding portion and the first connecting portion comprise Ti, W, Pt, Ni, Sn, Au or an alloy thereof.
7. The semiconductor light-emitting device according to claim 1 , wherein the substrate has a third width larger than the first width.
8. The semiconductor light-emitting device according to claim 1 , wherein the substrate is transparent to a light emitted from the semiconductor stack.
9. The semiconductor light-emitting device according to claim 3 , wherein the second electrode comprises a second connecting portion and a second bonding portion, and the insulating layer directly contacts the first extending portion and the second connecting portion.
10. The semiconductor light-emitting device according to claim 9 , wherein the second bonding portion, the second connecting portion or both comprise Ti, W, Pt, Ni, Sn, Au or an alloy thereof.
11. The semiconductor light-emitting device according to claim 1 , further comprising a second adhesive layer between the substrate and the first adhesive layer.
12. The semiconductor light-emitting device according to claim 11 , wherein the first adhesive layer extends over the first side surface and the second side surface.
13. The semiconductor light-emitting device according to claim 1 , wherein the contacting structure comprises Au, Ge, Be, Ni, Pd, Zn or an alloy thereof.
14. The semiconductor light-emitting device according to claim 3 , further comprising a transparent conduction layer between the first extending portion and the semiconductor stack.
15. The semiconductor light-emitting device according to claim 14 , wherein the transparent conduction layer comprises ITO, InO, SnO, CTO, ATO, AZO, ZTO, ZnO, or GaP.
16. The semiconductor light-emitting device according to claim 1 , wherein the second electrode further has a second portion covering the first side surface.
17. The semiconductor light-emitting device according to claim 5 , wherein the first bonding portion has a material different from the first connecting portion.
18. A light module, comprising:
a carrier; and
a semiconductor light-emitting device according to claim 1 .
19. A semiconductor light-emitting device, comprising:
a substrate;
a semiconductor stack on the substrate, and having a first width, an upper surface, a first side surface and a second side surface opposite to the first side surface;
a contacting structure, between the substrate and the semiconductor stack, having a side wall;
a first electrode on the upper surface;
a second electrode having a first portion on the upper surface;
a first adhesive layer covering the sidewall and having a second width larger than the first width; and
an insulating layer between the semiconductor stack and the second electrode,
wherein the first adhesive layer has a part not covered by the semiconductor stack, the insulating layer and the second electrode.