IP Library Granted Patent US 10,483,183
Granted Patent B2
US 10,483,183 · App. 16/164,112 · Granted Nov 19, 2019

Semiconductor device

Inventor: Norimune Orimoto (Toyota, JP)
Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
H01L23/367H01L22/34H01L23/373H01L23/3735H01L23/4334H01L23/492H01L23/42H01L2224/32245H01L2224/33H01L2924/181
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,483,183
App. No.
16/164,112
Granted
Nov 19, 2019
Kind
B2
Abstract

A semiconductor device may include a semiconductor element; a temperature detecting element provided at a central part of a surface of the semiconductor element, and a heat conductor jointed to the surface of the semiconductor element via a jointing element. The jointing element may include a central part positioned over the temperature detecting element, and a peripheral part positioned on a periphery of the central part of the jointing element. The heat conductor may include a metal part being in contact with the central part of the jointing element, and a graphite part being in contact with the peripheral part of the jointing element.

Claims (21)

1. A semiconductor device comprising:

a semiconductor element;

a temperature detecting element provided at a central part of a surface of the semiconductor element; and

a heat conductor jointed to the surface of the semiconductor element via a jointing element,

wherein

the jointing element comprises a central part positioned over the temperature detecting element, and a peripheral part positioned on a periphery of the central part of the jointing element, and

the heat conductor comprises a metal part being in contact with the central part of the jointing element, and a graphite part being in contact with the peripheral part of the jointing element.

2. The semiconductor device according to claim 1 , further comprising:

a plurality of metal wires embedded in the jointing element,

wherein the plurality of metal wires is arranged along the peripheral part of the jointing element when viewed in a direction orthogonal to the surface of the semiconductor element.

3. The semiconductor device according to claim 1 , wherein

a plurality of recesses is provided in the graphite part, and

the jointing element fills each of the recesses.

4. A semiconductor device comprising:

a semiconductor element;

a temperature detecting element provided at a central part of a surface of the semiconductor element;

a heat conductor jointed to the surface of the semiconductor element via a jointing element; and

a plurality of metal wires embedded in the jointing element,

wherein

the jointing element comprises a central part positioned over the temperature detecting element, and a peripheral part positioned on a periphery of the central part of the jointing element, and

the plurality of metal wires is arranged along the peripheral part of the jointing element when viewed in a direction orthogonal to the surface of the semiconductor element.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2020
From: TOYOTA JIDOSHA KABUSHIKI KAISHA
To: DENSO CORPORATION
Reel/Frame 052285/0419 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2018
From: ORIMOTO, NORIMUNE
To: TOYOTA JIDOSHA KABUSHIKI KAISHA
Reel/Frame 047217/0950 →