IP Library Granted Patent US 10,955,747
Granted Patent B2
US 10,955,747 · App. 16/166,788 · Granted Mar 23, 2021

Apparatus and methods of electrically conductive optical semiconductor coating

Inventor: Bradley Dean Schwartz (Brewster, NY)
Assignee: Goodrich Corporation
G03F7/32C23C14/48G02B1/11G02B1/14G03F7/20H01L23/552H01L31/0216
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Quick Facts
Patent No.
US 10,955,747
App. No.
16/166,788
Granted
Mar 23, 2021
Kind
B2
Abstract

A method of coating an optical substrate with a transparent, electrically conductive coating includes depositing a semiconductor coating over a surface of an optical substrate, wherein the semiconductor coating has broadband optical transmittance. A doped semiconductor is applied in a pattern over the semiconductor coating. The doped semiconductor in the pattern is activated for electrical conductivity in the doped semiconductor.

Claims (16)

1. A window comprising:

a transparent substrate with a coating over the transparent substrate, the coating being made of both a transparent semiconductor and an electrically conductive semiconductor, the electrically conductive semiconductor being distributed in a pattern in the transparent semiconductor.

2. The window as recited in claim 1 , wherein the semiconductor coating has broadband optical transmittance.

3. The window as recited in claim 1 , wherein the pattern includes a grid.

4. The window as recited in claim 1 , further comprising a protective coating over the semiconductor coating.

5. The window as recited in claim 4 , further comprising a broadband anti-reflection coating over the protective coating.

6. The window as recited in claim 1 , further comprising a broadband anti-reflection coating over the semiconductor coating.

7. The window as recited in claim 1 , wherein the semiconductor coating includes at least one of In 2 O 3 or ZnO.

8. The window as recited in claim 1 , wherein the electrically conductive semiconductor includes doping portions of the semiconductor coating forming a pattern of doped semiconductor in the semiconductor coating.

9. The window as recited in claim 8 , wherein the doped semiconductor includes at least one of Sn, Mo, W, Ti, Al, or Ga.

10. The method as recited in claim 1 , wherein the semiconductor coating has broadband optical transmittance in at least visible and infrared spectra.

11. The window as recited in claim 1 , wherein a surface of the semiconductor coating is covered in its entirety with the pattern.

12. The window as recited in claim 8 , wherein the doped semiconductor, semiconductor coating, and optical substrate are formed into a window without etching.

13. The window as recited in claim 8 , wherein the doped semiconductor, semiconductor coating, and optical substrate are formed into a window without polishing or post-process planarization.

14. The window as recited in claim 8 , wherein the doped semiconductor and semiconductor coating have closely matched indices of refraction to mitigate light scattering.

15. The window as recited in claim 1 , wherein the pattern is configured to provide electromagnetic interference (EMI) shielding to the optical substrate.

Assignments (3)
ASSIGNMENT AND ASSUMPTION AGREEMENT AND BILL OF SALE Recorded Sep 2, 2020
From: GOODRICH CORPORATION; RAYTHEON TECHNOLOGIES CORPORATION
To: DANBURY MISSION TECHNOLOGIES, LLC (FORMERLY KNOWN AS AMERGINT EO SOLUTIONS, LLC)
Reel/Frame 053680/0799 →
PATENT SECURITY AGREEMENT Recorded Sep 1, 2020
From: DANBURY MISSION TECHNOLOGIES, LLC; TETHERS UNLIMITED, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053663/0239 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 16, 2019
From: SCHWARTZ, BRADLEY DEAN
To: GOODRICH CORPORATION
Reel/Frame 048025/0001 →
Cited By (1)
US 12,399,430