Vertical cavity surface emitting laser
The disclosure relates to a Vertical Cavity Surface Emitting Laser ( 100 ) comprising a first electrical contact ( 105 ), a substrate ( 110 ), a first Distributed Bragg Reflector ( 115 ), an active layer ( 120 ), a second Distributed Bragg Reflector ( 130 ) and a second electrical contact ( 135 ). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers ( 125 ) arranged below or above the active layer ( 120 ), wherein each of the current aperture layers ( 125 ) comprises one Al y Ga (1−y) As-layer, wherein a first current aperture layer ( 125 a ) of the at least two current aperture layers ( 125 ) is arranged nearer to the active layer ( 120 ) as a second current aperture layer ( 125 b ) of the at least two current aperture layers ( 125 ), wherein the first current aperture layer ( 125 a ) comprises a first current aperture ( 122 a ) with a bigger size as a second current aperture ( 122 b ) of the second current aperture layer ( 125 b ). The disclosure also relates to a method of manufacturing such a VCSEL ( 100 ).
1. A Vertical Cavity Surface Emitting Laser comprising:
a first electrical contact;
a substrate;
a first Distributed Bragg Reflector;
an active layer;
a second Distributed Bragg Reflector; and
a second electrical contact,
wherein the Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers arranged below or above the active layer,
wherein each of the current aperture layers comprises a Al y Ga (1−y) As-layer,
wherein a first current aperture layer of the at least two current aperture layers has a first current aperture,
wherein a second current aperture layer of the at least two current aperture layers has a second current aperture,
wherein the first current aperture layer of the at least two current aperture layers is arranged nearer to the active layer than the second current aperture layer of the at least two current aperture layers,
wherein the first current aperture is larger than the second current aperture.
2. The Vertical Cavity Surface Emitting Laser according to claim 1 , further comprising at least one Al y Ga (1−y) As-layer with 0.95≤y≤1, wherein the at least one Al y Ga (1−y) As-layer has a thickness of at least 40 nm,
wherein the at least one Al y Ga (1−y) As-layer is separated into at least two sub-layers,
wherein at least one oxidation control layer is disposed between the at least two sub-layers.
3. The Vertical Cavity Surface Emitting Laser according to claim 2 ,
wherein the at least one oxidation control layer has a by a thickness between 0.7 nm and 3 nm.
4. The Vertical Cavity Surface Emitting Laser according to claim 1 ,
wherein each of the at least two current aperture layers comprises a Al y Ga (1−y) As-layer with one or more oxidation control layers.
5. The Vertical Cavity Surface Emitting Laser according to claim 1 ,
wherein the second current aperture is arranged at a distance corresponding to an integer multiple of half of the emission wavelength of the Vertical Cavity Surface Emitting Laser to the active layer.
6. The Vertical Cavity Surface Emitting Laser according to claim 1 ,
wherein the first Distributed Bragg Reflector or the second Distributed Bragg Reflector comprises the at least one Al y Ga (1−y) As-layer.
7. The Vertical Cavity Surface Emitting Laser according to claim 2 ,
wherein a material of the oxidation control layer comprises Al x Ga (1−x) As, wherein 0≤x≤0.9.
8. The Vertical Cavity Surface Emitting Laser according to claim 2 ,
wherein the at least one Al y Ga (1−y) As-layer has y>0.99, and
wherein the at least one Al y Ga (1−y) As-layer is separated by at least two oxidation control layers, and a material of the oxidation control layer comprises Al x Ga (1−x) As with 0.4≤x≤0.6.
9. The Vertical Cavity Surface Emitting Laser according to claim 2 ,
wherein a thickness of the at least one oxidation control layer comprises between 3% and 10% of a total thickness of the Al y Ga (1−y) As-layer.
10. The Vertical Cavity Surface Emitting Laser according to claim 1 ,
wherein at least one of the at least one Al y Ga (1−y) As-layer comprises a tapered oxidation profile, wherein the current second aperture comprises a tapered oxidation profile.
11. The Vertical Cavity Surface Emitting Laser according to claim 10 ,
wherein the at least one Al y Ga (1−y) As-layer with the tapered oxidation profile comprises at least two oxidation control layers,
wherein the at least two oxidation control layers separate the at least one Al y Ga (1−y) As-layer in at least three sub-layers, and
wherein at least one of the three sub-layers has a different thickness as the other sub-layers.
12. The Vertical Cavity Surface Emitting Laser according to claim 10 ,
wherein a waistline of the tapered oxidation profile is arranged in a range of a node of a standing wave pattern of the Vertical Cavity Surface Emitting Laser when driven at a predefined electrical driving current.
13. The Vertical Cavity Surface Emitting Laser according to claim 2 ,
wherein the first Distributed Bragg Reflector and the second Distributed Bragg Reflector comprise a multitude of high refractive index layers and a multitude of low refractive index layers,
wherein the low refractive index layers comprise said Al y Ga (1−y) As-layers.
14. The laser device comprising at least one Vertical Cavity Surface Emitting Laser according to claim 1 and an electrical driving circuit for electrically driving the Vertical Cavity Surface Emitting Laser.
15. A method of fabricating a Vertical Cavity Surface Emitting Laser, the method comprising:
providing a first electrical contact;
providing a substrate;
providing a first distributed Bragg reflector;
providing an active layer;
providing a second distributed Bragg reflector;
providing a second electrical contact;
providing at least two current aperture layers,
wherein the at least two current aperture layers are arranged below or above the active layer;
arranging a first current aperture layer of the at least two current aperture layers nearer to the active layer as a second current aperture layer the at least two current aperture layers;
providing a first current aperture in the first current aperture layer; and
providing a second current aperture in the second current aperture layer with a smaller size as the first current aperture.
16. The method of fabricating a Vertical Cavity Surface Emitting Laser according to claim 15 ,
wherein each of the current aperture layers comprises at least one Al y Ga (1−y) As-layer.
17. The method of fabricating a Vertical Cavity Surface Emitting Laser according to claim 16 ,
wherein the at least one Al y Ga (1−y) As-layer has a thickness of at least 40 nm,
wherein the at least one Al y Ga (1−y) As-layer is separated into at least two sub-layers,
wherein at least one oxidation control layer is disposed between the at least two sub-layers.
18. The method of fabricating a Vertical Cavity Surface Emitting Laser according to claim 17 ,
wherein the at least one oxidation control layer has a by a thickness between 0.7 nm and 3 nm.
19. The method of fabricating a Vertical Cavity Surface Emitting Laser according to claim 16 ,
wherein each of the first current aperture layer and the second current aperture layer comprises a Al y Ga (1−Y) As-layer with one or more oxidation control layers.
20. The method of fabricating a Vertical Cavity Surface Emitting Laser according to claim 15 ,
wherein the second current aperture is arranged at a distance corresponding to an integer multiple of half of the emission wavelength of the Vertical Cavity Surface Emitting Laser to the active layer.