CEM switching device
Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.
1. A method for the manufacture of a CEM switching device, which method comprises forming a conductive substrate and forming a layer of a correlated electron material (CEM) on the conductive substrate, where the forming of the conductive substrate comprises forming a primary layer of a conductive material and forming a secondary layer of a conductive material such that the primary layer contacts the CEM layer and the secondary layer contacts the primary layer, the thickness of the secondary layer being greater than that of the primary layer and the conductive material of the primary layer being substantially resistant to diffusion or migration of oxygen ion from the CEM layer to the secondary layer.
2. The method according to claim 1 , wherein the method further comprises forming a conductive overlay on the CEM layer, the conductive overlay being a single layer of a conductive material which is resistant to diffusion or migration of oxygen ion.
3. The method according to claim 1 , wherein the primary layer of the conductive substrate is more resistant to etching as compared to the CEM layer.
4. The method according to claim 1 , wherein the work function of the primary layer is matched with that of the CEM layer.
5. The method according to claim 1 , wherein the forming of the primary layer comprises forming a plurality of sub-layers of different noble metals and/or noble metal oxides.
6. The method according to claim 1 , wherein the forming of the primary layer comprises forming monolayers comprising more than one noble metal and/or noble metal oxide.
7. The method according to claim 1 , wherein the conductive material of the primary layer comprises one or more of ruthenium titanium nitride (Ru—TiN), platinum titanium nitride (Pt—TiN), iridium titanium nitride (Ir—TiN), palladium titanium nitride (Pd—TiN), rhodium titanium nitride (Rh—TiN), ruthenium tantalum nitride (Ru—TaN), rhodium tantalum nitride (Rh—TaN), platinum tantalum nitride (Pt—TaN), iridium tantalum nitride (Ir—TaN) and palladium tantalum nitride (Pd—TaN).
8. The method according to claim 1 , wherein the conductive material of the primary layer comprises one or more of ruthenium nickel silicide (Ru—NiSi), platinum nickel silicide (Pt—NiSi), rhodium nickel silicide (Rh—NiSi), iridium nickel silicide (Ir—NiSi) and palladium nickel silicide (Pd—NiSi).
9. The method according to claim 1 , wherein the conductive material of the primary layer comprises one or more of Ru—Al, Ru—Cu, Ru—Co or Ru—Ni, or Ru-polysilicon, Pt-polysilicon or Ir-polysilicon.
10. A switching device comprising a conductive substrate, and a layer of a correlated electron material (CEM), where the conductive substrate comprises a primary layer of a conductive material and a secondary layer of a conductive material, the thickness of the secondary layer being greater than that of the primary layer, the primary layer contacting the CEM layer and the secondary layer contacting the primary layer, the primary layer being substantially resistant to diffusion or migration of oxygen ion from the CEM layer to the secondary layer.
11. The switching device according to claim 10 , further comprising a conductive overlay on the CEM layer, the conductive overlay being a single layer of a conductive material which is resistant to diffusion or migration of oxygen ion.
12. The switching device according to claim 10 , wherein the primary layer of the conductive substrate is more resistant to etching as compared to the CEM layer.
13. The switching device according to claim 10 , wherein the work function of the primary layer is matched with that of the CEM layer.
14. The switching device according to claim 10 , wherein the primary layer comprises a plurality of sub-layers of different noble metals and/or noble metal oxides.
15. The switching device according to claim 10 , wherein the primary layer comprises monolayers comprising more than one noble metal and/or noble metal oxide.
16. The switching device according to claim 10 , wherein the conductive material of the primary layer comprises one or more of ruthenium titanium nitride (Ru—TiN), platinum titanium nitride (Pt—TiN), iridium titanium nitride (Ir—TiN), palladium titanium nitride (Pd—TiN), rhodium titanium nitride (Rh—TiN), ruthenium tantalum nitride (Ru—TaN), rhodium tantalum nitride (Rh—TaN), platinum tantalum nitride (Pt—TaN), iridium tantalum nitride (Ir—TaN) and palladium tantalum nitride (Pd—TaN).
17. The switching device according to claim 10 , wherein the conductive material of the primary layer comprises one or more of ruthenium nickel silicide (Ru—NiSi), platinum nickel silicide (Pt—NiSi), rhodium nickel silicide (Rh—NiSi), iridium nickel silicide (Ir—NiSi) and palladium nickel silicide (Pd—NiSi).
18. The switching device according to claim 10 , wherein the conductive material of the primary layer comprises one or more of Ru—Al, Ru—Cu, Ru—Co or Ru—Ni, or Ru-polysilicon, Pt-polysilicon or Ir-polysilicon.