CEM switching device
Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.
1. A method for the manufacture of a CEM switching device, which method comprises forming a conductive substrate and forming a layer of correlated electron material (CEM) on or over the conductive substrate, wherein the forming of the CEM layer comprises forming a layer of a correlated electron material comprising a doped metal compound of a d- or f-block element comprising ions of the same d- or f-block element in different oxidation states and less than 5 atom % of free d- or f-block element, the free d- or f-block element being unbound and in a zero oxidation state.
2. The method according to claim 1 , wherein the doped metal compound comprises two different ions of the same d- or f-block element.
3. The method according to claim 2 , wherein the doped metal compound comprises three different ions of the same d- or f-block element.
4. The method according to claim 1 , wherein the different ions of the same d- or f-block element have oxidation states +2 and +3.
5. The method according to claim 1 , wherein the doped metal compound is a doped nickel oxide comprising Ni 2+ and Ni 3+ ions.
6. The method according to claim 5 , wherein the doped nickel oxide is absent a peak in the X-ray photoelectron spectroscopy spectrum of the CEM layer corresponding to unbound nickel in zero oxidation state.
7. The method according to claim 1 , wherein the doped metal compound is a doped nickel oxide comprising Nit, Ni 2+ and Ni 3+ ions.
8. The method according to claim 1 , further comprising forming a conductive overlay on the CEM layer.
9. The method according to claim 1 , wherein the dopant is carbonyl ligand.
10. The method according to claim 9 , wherein the doped metal compound provides a carbon content of between 10 atom % and 20 atom % in the fully formed device.
11. A method for the manufacture of a CEM switching device, which method comprises forming a layer of correlated electron material (CEM) on a substrate and forming a conductive overlay on the CEM layer, wherein the forming of the CEM layer comprises forming a layer of a correlated electron material comprising a doped metal compound of a d- or f-block element comprising ions of the same d- or f-block element in different oxidation states and less than 5 atom % of free d- or f-block element, the free d- or f-block element being unbound and in a zero oxidation state.
12. The method according to claim 11 , wherein the doped metal compound comprises two different ions of the same d- or f-block element.
13. The method according to claim 12 , wherein the doped metal compound comprises three different ions of the same d- or f-block element.
14. The method according to claim 11 , wherein the different ions of the same d- or f-block element have oxidation states +2 and +3.
15. The method according to claim 11 , wherein the doped metal compound is a doped nickel oxide comprising Ni 2+ and Ni 3+ ions.
16. The method according to claim 15 , wherein the doped nickel oxide is absent a peak in the X-ray photoelectron spectroscopy spectrum of the CEM layer corresponding to unbound nickel in zero oxidation state.
17. The method according to claim 11 , wherein the doped metal compound is a doped nickel oxide comprising Nit, Ni 2+ and Ni 3+ ions.
18. The method according to claim 17 , wherein the doped nickel oxide is absent a peak in the X-ray photoelectron spectroscopy spectrum of the CEM layer corresponding to unbound nickel in zero oxidation state.
19. The method according to claim 11 , wherein the substrate is a conductive substrate.
20. The method according to claim 11 , wherein the dopant is carbonyl ligand.
21. The method according to claim 20 , wherein the doped metal compound provides a carbon content of between 10 atom % and 20 atom % in the fully formed device.