Semiconductor memory device and operating method thereof
The semiconductor memory device includes a memory cell array, an address decoder, a switch, and a control logic. The memory cell array includes a plurality of memory blocks having a plurality of memory cells. The address decoder is connected to the memory cell array through row lines. The switch is connected non-memory lines among the row lines. The control logic controls operations of the address decoder and the switch. During an erase operation on memory cells included in a selected memory block among the plurality of memory blocks, the control logic controls the switch to precharge non-memory lines connected to an unselected memory block among the plurality of memory blocks and then float the non-memory lines connected to the unselected memory block.
1. A semiconductor memory device comprising:
a memory cell array including a plurality of memory blocks having a plurality of memory cells;
an address decoder connected to the memory cell array through row lines, the row lines including word lines and non-memory lines, each of the word lines being coupled to a gate terminal of a corresponding memory cell among the plurality of memory cells, each of the non-memory lines being at least one of a drain select line and a source select line;
a switch connected to the non-memory lines among the row lines; and
a control logic configured to control operations of the address decoder and the switch,
wherein, during an erase operation on memory cells in a selected memory block among the plurality of memory blocks, the control logic controls the switch to precharge non-memory lines connected to an unselected memory block among the plurality of memory blocks and then float the non-memory lines connected to the unselected memory block.
2. The semiconductor memory device of claim 1 , wherein the control logic controls the address decoder to erase the selected memory block after the non-memory lines connected to the unselected memory block are floated.
3. The semiconductor memory device of claim 1 , wherein the control logic controls the address decoder and the switch such that the non-memory lines are floated before the non-memory lines connected to the unselected memory block are precharged.
4. The semiconductor memory device of claim 1 ,
wherein the non-memory lines further include a pipe line.
5. The semiconductor memory device of claim 1 , wherein the address decoder includes a plurality of block select circuits each connected to a corresponding memory block among the plurality of memory blocks through the row lines,
wherein the switch includes a plurality of switching circuits each connected to non-memory lines connected to a corresponding memory block among the plurality of memory blocks.
6. The semiconductor memory device of claim 5 , wherein each of the plurality of block select circuits connects row lines connected to a corresponding memory block to global lines in response to a block select signal.
7. The semiconductor memory device of claim 6 , wherein each of the switching circuits precharges corresponding non-memory lines by connecting the non-memory lines to a precharge power source in response to a control signal.
8. The semiconductor memory device of claim 7 , wherein each of the plurality of switching circuits includes a first transistor connected between a corresponding drain select line and the precharge power source, a second transistor connected between a corresponding source select line and the precharge power source, and a third transistor connected between a corresponding pipe line and the precharge power source.
9. The semiconductor memory device of claim 8 , wherein at least one of the first transistor, the second transistor, and the third transistor includes an NMOS transistor.
10. The semiconductor memory device of claim 8 , wherein at least one of the first transistor, the second transistor, and the third transistor includes a PMOS transistor.
11. A method for operating a semiconductor memory device including a plurality of memory blocks, each of the plurality of memory blocks being coupled to row lines, the row lines including word lines and non-memory lines, each of the word lines being coupled to a gate terminal of a corresponding memory cell among the plurality of memory cells, each of the non-memory lines being at least one of a drain select line and a source select line, the method comprising:
precharging non-memory lines of an unselected memory block among the plurality of memory blocks;
floating the non-memory lines of the unselected memory block; and
applying an erase voltage to a selected memory block among the plurality of memory blocks.
12. The method of claim 11 , wherein the precharging of the non-memory lines of the unselected memory block comprises:
turning off a block select circuit connected to the unselected memory block; and
connecting the non-memory lines of the unselected memory block to a precharge power source by turning on a switching circuit connected to the non-memory lines of the unselected memory block.
13. The method of claim 12 , wherein the floating of the non-memory lines of the unselected memory block comprises:
maintaining a turn-off state of the block select circuit connected to the unselected memory block, and
turning off the switching circuit connected to the non-memory lines of the unselected memory block.
14. The method of claim 13 , wherein the applying of the erase voltage to the selected memory block among the plurality of memory blocks comprises:
applying an erase permission voltage to a word line connected to the selected memory block, and
applying the erase voltage to a bulk area in which the selected memory block is formed.
15. The method of claim 11 , wherein the precharging of the non-memory lines of the unselected memory block includes connecting the non-memory lines of the unselected memory block to global non-memory lines by turning on a block select circuit connected to the unselected memory block.
16. The method of claim 15 , wherein the floating of the non-memory lines of the unselected memory block includes cutting off connection between the non-memory lines of the unselected memory block and the global non-memory lines by turning off the block select circuit connected to the unselected memory block.
17. A semiconductor memory device comprising:
a memory cell array including a plurality of memory blocks;
an address decoder configured to select at least one of the plurality of memory blocks;
a plurality of row lines coupled between the address decoder and the plurality of memory blocks, the row lines including word lines and non-memory lines, each of the word lines being coupled to a gate terminal of a corresponding memory cell among a plurality of memory cells of the plurality of memory blocks, each of the non-memory lines being at least one of a drain select line and a source select line coupled to the plurality of memory blocks;
a switch configured to selectively couple the plurality of row lines to a power source; and
a control logic configured to control the switch such that the non-memory lines connected to at least one unselected memory block are coupled to the power source to be precharged, and then floated.
18. The semiconductor memory device of claim 17 , wherein, during an erase operation on memory cells included in a selected memory block among the plurality of memory blocks, the control logic controls the switch such that the non-memory lines connected to the selected memory block are coupled to the power source.