Stop-On Silicon Containing Layer Additive
Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.
1 . A polishing composition comprising:
0.01 wt. % to 20 wt.% of colloidal silica particles,
0.01 wt. % to 10 wt. % of a water soluble aluminum compound selected from the group consisting of sodium aluminate, potassium aluminate, aluminum acetate, aluminum hydroxide, and combinations thereof;
optionally,
0.0001 wt % to about 5 wt % of a pH adjusting agent;
0.0001 wt % to 10 wt % of a surfactant selected from the group consisting of a). non-ionic surface wetting agents; b). anionic surface wetting agents; c). cationic surface wetting agents; d). ampholytic surface wetting agents; and mixtures thereof;
0.001% to about 5 wt % of a corrosion inhibitor selected from the group consisting of chemical additive containing nitrogen atoms in the molecules;
0.5 wt % to 10 wt % of an oxidizing agent selected from the group consisting of peroxy-compound comprising at least one peroxy group (O—O), oxidized halide, perboric acid, perborate, percarbonate, peroxyacid, permanganate, chromate, cerium compound, ferricyanide, and mixtures thereof; and
0.1 wt % to 5 wt % of an organic acid selected from the group consisting of benzenesulfonic acid, toluenesulfonic acid or any other suitable organic acid or amino acid or salt thereof;
and
water;
wherein the polishing composition has a pH above 7.
2 . The polishing composition of claim 1 , wherein
the pH-adjusting agent is selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, chloroacetic acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, sulfonic acid, phosphoric acid, fatty acid, polycarboxylic acid, hydrogen chloride, and mixtures thereof; or is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonia, quaternary organic ammonium hydroxide (e.g. tetramethylammonium hydroxide), ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof.
3 . The polishing composition of claim 1 , wherein
the corrosion inhibitor is selected from the group consisting of benzotriazole (BTA) and benzotriazole derivatives, triazole and their relative derivatives;
imidizole and its derivatives, pyrazole and its derivatives, benzoimidizaole and its derivatives, and combinations thereof.
4 . The polishing composition of claim 1 , wherein
the non-ionic surface wetting agent is selected from the group consisting of ethoxylated alcohol, ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether, proplylene glycol alkyl ether, glucoside alkyl ether, polyethylene glycol octylphenyl ether, polyethylene glycol alkylpgenyl ether, glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanol amine, dodecyl dimethylamine oxide, block copolymers of polyethylene glycol and polypropylene glycol, polyethoxylated tallow amines, fluorosurfactant, and combinations thereof;
the anionic surface wetting agent is selected from the group consisting of alkyl carboxylate, alkyl polyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substituted aryl carboxylate, substituted aryl sulfate, substituted aryl phosphate, substituted aryl bicarboxylate, substituted aryl bisulfate, substituted aryl biphosphate, and combinations thereof;
the cationic surface wetting agent is a halide of molecules comprising hydrophobic chain and cationic charge center selected from the group consisting of amine, quaternary ammonium, benzyalkonium and alkylpyridinium ion;
and
the ampholytic surface wetting agent possess both positive (cationic) and negative (anionic) charges on the main molecular chains and with their relative counter ions.
5 . The polishing composition of claim 1 , wherein the polishing composition has a pH of 8 to 12.
6 . The polishing composition of claim 5 , wherein the polishing composition has a pH of 10 to 12.
7 . A polishing method for chemical mechanical planarization of a semiconductor device comprising at least one surface having a first material and a second material, comprising the steps of:
a) contacting the at least one surface with a polishing pad;
b) delivering a polishing composition to the at least one surface, the polishing composition comprising:
0.01 wt. % to 20 wt.% of colloidal silica particles;
0.01 wt. % to 10 wt. % of a water soluble aluminum compound selected from the group consisting of sodium aluminate, potassium aluminate, aluminum acetate, aluminum hydroxide, and combinations thereof;
optionally,
0.0001 wt % to about 5 wt % of a pH adjusting agent;
0.0001 wt % to 10 wt % of a surfactant selected from the group consisting of a). non-ionic surface wetting agents; b). anionic surface wetting agents; c). cationic surface wetting agents; d). ampholytic surface wetting agents; and mixtures thereof;
0.001% to about 5 wt % of a corrosion inhibitor selected from the group consisting of chemical additive containing nitrogen atoms in the molecules;
0.5 wt % to 10 wt % of an oxidizing agent selected from the group consisting of peroxy-compound comprising at least one peroxy group (O—O), oxidized halide, perboric acid, perborate, percarbonate, peroxyacid, permanganate, chromate, cerium compound, ferricyanide, and mixtures thereof; and
0.1 wt % to 5 wt % of an organic acid selected from the group consisting of benzenesulfonic acid, toluenesulfonic acid or any other suitable organic acid or amino acid or salt thereof;
and
water;
wherein the polishing composition has a pH above 7;
c) polishing the at least one surface with the polishing composition to remove the first material and to stop-on the second material with removal rate <100Å/min.;
wherein
the first material is selected from the group consisting of a metal, a barrier or liner material, a dielectric material, and combinations thereof; and the second material comprises at least one silicon containing material.
8 . The method of claim 7 , wherein
the pH-adjusting agent in the polishing composition is selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, chloroacetic acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, sulfonic acid, phosphoric acid, fatty acid, polycarboxylic acid, hydrogen chloride, and mixtures thereof; or is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonia, quaternary organic ammonium hydroxide (e.g. tetramethylammonium hydroxide), ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof;
the corrosion inhibitor in the polishing composition is selected from the group consisting of benzotriazole (BTA) and benzotriazole derivatives, triazole and their relative derivatives; imidizole and its derivatives, pyrazole and its derivatives, benzoimidizaole and its derivatives, and combinations thereof;
the non-ionic surface wetting agent is selected from the group consisting of ethoxylated alcohol, ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether, proplylene glycol alkyl ether, glucoside alkyl ether, polyethylene glycol octylphenyl ether, polyethylene glycol alkylpgenyl ether, glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanol amine, dodecyl dimethylamine oxide, block copolymers of polyethylene glycol and polypropylene glycol, polyethoxylated tallow amines, fluorosurfactant, and combinations thereof;
the anionic surface wetting agent is selected from the group consisting of alkyl carboxylate, alkyl polyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substituted aryl carboxylate, substituted aryl sulfate, substituted aryl phosphate, substituted aryl bicarboxylate, substituted aryl bisulfate, substituted aryl biphosphate, and combinations thereof;
the cationic surface wetting agent is a halide of molecules comprising hydrophobic chain and cationic charge center selected from the group consisting of amine, quaternary ammonium, benzyalkonium and alkylpyridinium ion;
and
the ampholytic surface wetting agent possess both positive (cationic) and negative (anionic) charges on the main molecular chains and with their relative counter ions.
9 . The method of claim 7 , wherein the polishing composition further comprising the corrosion inhibitor selected from the group consisting of benzotriazole (BTA) and benzotriazole derivatives, triazole or triazole derivatives, and combinations thereof; potassium hydroxide; benzenesulfonic acid; optionally a peroxy-compound comprising at least one peroxy group.
10 . The method of claim 7 , wherein the polishing composition further comprising the pH-adjusting agent selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, chloroacetic acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, sulfonic acid, phosphoric acid, fatty acid, polycarboxylic acid, hydrogen chloride, and mixtures thereof; or is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonia, quaternary organic ammonium hydroxide (e.g. tetramethylammonium hydroxide), ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof.
11 . The method of claim 7 , wherein the polishing composition further comprising the surfactant; wherein
the non-ionic surface wetting agent is selected from the group consisting of ethoxylated alcohol, ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether, proplylene glycol alkyl ether, glucoside alkyl ether, polyethylene glycol octylphenyl ether, polyethylene glycol alkylpgenyl ether, glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanol amine, dodecyl dimethylamine oxide, block copolymers of polyethylene glycol and polypropylene glycol, polyethoxylated tallow amines, fluorosurfactant, and combinations thereof;
the anionic surface wetting agent is selected from the group consisting of alkyl carboxylate, alkyl polyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substituted aryl carboxylate, substituted aryl sulfate, substituted aryl phosphate, substituted aryl bicarboxylate, substituted aryl bisulfate, substituted aryl biphosphate, and combinations thereof;
the cationic surface wetting agent is a halide of molecules comprising hydrophobic chain and cationic charge center selected from the group consisting of amine, quaternary ammonium, benzyalkonium and alkylpyridinium ion;
and
the ampholytic surface wetting agent possess both positive (cationic) and negative (anionic) charges on the main molecular chains and with their relative counter ions.
12 . The method of claim 7 , wherein the polishing composition further comprising the organic acid.
13 . The method of claim 7 , wherein the polishing composition further comprising the pH-adjusting agent selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, chloroacetic acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, sulfonic acid, phosphoric acid, fatty acid, polycarboxylic acid, hydrogen chloride, and mixtures thereof; or is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonia, quaternary organic ammonium hydroxide (e.g. tetramethylammonium hydroxide), ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof;
the corrosion inhibitor selected from the group consisting of benzotriazole (BTA) and benzotriazole derivatives, triazole and their relative derivatives; imidizole and its derivatives, pyrazole and its derivatives, benzoimidizaole and its derivatives, and combinations thereof;
the surfactant; wherein
the non-ionic surface wetting agent is selected from the group consisting of ethoxylated alcohol, ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether, proplylene glycol alkyl ether, glucoside alkyl ether, polyethylene glycol octylphenyl ether, polyethylene glycol alkylpgenyl ether, glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanol amine, dodecyl dimethylamine oxide, block copolymers of polyethylene glycol and polypropylene glycol, polyethoxylated tallow amines, fluorosurfactant, and combinations thereof;
the anionic surface wetting agent is selected from the group consisting of alkyl carboxylate, alkyl polyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substituted aryl carboxylate, substituted aryl sulfate, substituted aryl phosphate, substituted aryl bicarboxylate, substituted aryl bisulfate, substituted aryl biphosphate, and combinations thereof;
the cationic surface wetting agent is a halide of molecules comprising hydrophobic chain and cationic charge center selected from the group consisting of amine, quaternary ammonium, benzyalkonium and alkylpyridinium ion;
and
the ampholytic surface wetting agent possess both positive (cationic) and negative (anionic) charges on the main molecular chains and with their relative counter ions;
and
the organic acid;
wherein the polishing composition has a pH of 8 to 12.
14 . The method of claim 7 , wherein
removal rate ratio between the first material and the second material is greater than 10.
15 . The method of claim 7 , wherein
the first material is selected from the group consisting of metal film selected from the group consisting of Cu, W, Co, Al and combinations thereof; barrier or liner film selected from the group consisting of Ta, TaN, Ti, TiN, Ru and combinations thereof; low-k material dielectric film; and combinations thereof; and the at least one silicon containing material is selected from the group consisting of silicon nitride, silicon oxide, silicon carbide, and combinations thereof.
16 . The method of claim 15 , wherein removal rate for the second material is less than 10 Å/min.
17 . The method of claim 15 , wherein
removal rate ratio between the first material and the second material is greater than 100.
18 . A system for chemical mechanical planarization, comprising:
a patterned substrate comprising at least one surface having a first material selected from the group consisting of a metal, a barrier or liner material, a dielectric material and combinations thereof; and a second material comprising at least one silicon containing material;
a polishing pad; and
a polishing composition to the at least one surface, the polishing composition comprising:
0.01 wt. % to 20 wt.% of colloidal silica particles;
0.01 wt. % to 10 wt. % of a water soluble aluminum compound selected from the group consisting of sodium aluminate, potassium aluminate, aluminum acetate, aluminum hydroxide, and combinations thereof;
optionally,
0.0001 wt % to about 5 wt % of a pH adjusting agent;
0.0001 wt % to 10 wt % of a surfactant selected from the group consisting of a). non-ionic surface wetting agents; b). anionic surface wetting agents; c). cationic surface wetting agents; d). ampholytic surface wetting agents; and mixtures thereof;
0.001% to about 5 wt % of a corrosion inhibitor selected from the group consisting of chemical additive containing nitrogen atoms in the molecules;
0.5 wt % to 10 wt % of an oxidizing agent selected from the group consisting of peroxy-compound comprising at least one peroxy group (O—O), oxidized halide, perboric acid, perborate, percarbonate, peroxyacid, permanganate, chromate, cerium compound, ferricyanide, and mixtures thereof; and
0.1 wt % to 5 wt % of an organic acid selected from the group consisting of benzenesulfonic acid, toluenesulfonic acid or any other suitable organic acid or amino acid or salt thereof;
and
water;
wherein the polishing composition has a pH above 7
and
the at least one surface is in contact with the polishing pad and the polishing composition.
19 . The system of claim 18 , wherein
the pH-adjusting agent in the polishing composition is selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, chloroacetic acid, tartaric acid, succinic acid, citric acid, malic acid, malonic acid, sulfonic acid, phosphoric acid, fatty acid, polycarboxylic acid, hydrogen chloride, and mixtures thereof; or is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonia, quaternary organic ammonium hydroxide (e.g. tetramethylammonium hydroxide), ethylenediamine, piperazine, polyethyleneimine, modified polyethyleneimine, and mixtures thereof;
the corrosion inhibitor in the polishing composition is selected from the group consisting of benzotriazole (BTA) and benzotriazole derivatives, triazole and their relative derivatives; imidizole and its derivatives, pyrazole and its derivatives, benzoimidizaole and its derivatives, and combinations thereof;
the non-ionic surface wetting agent is selected from the group consisting of ethoxylated alcohol, ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether, proplylene glycol alkyl ether, glucoside alkyl ether, polyethylene glycol octylphenyl ether, polyethylene glycol alkylpgenyl ether, glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanol amine, dodecyl dimethylamine oxide, block copolymers of polyethylene glycol and polypropylene glycol, polyethoxylated tallow amines, fluorosurfactant, and combinations thereof;
the anionic surface wetting agent is selected from the group consisting of alkyl carboxylate, alkyl polyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substituted aryl carboxylate, substituted aryl sulfate, substituted aryl phosphate, substituted aryl bicarboxylate, substituted aryl bisulfate, substituted aryl biphosphate, and combinations thereof;
the cationic surface wetting agent is a halide of molecules comprising hydrophobic chain and cationic charge center selected from the group consisting of amine, quaternary ammonium, benzyalkonium and alkylpyridinium ion;
and
the ampholytic surface wetting agent possess both positive (cationic) and negative (anionic) charges on the main molecular chains and with their relative counter ions.
20 . The system of claim 18 , wherein
the metal film is selected from the group consisting of Cu, W, Co, Al and combinations thereof; the barrier or liner film is selected from the group consisting of Ta, TaN, Ti, TiN, Ru and combinations thereof; and the dielectric film is a low-k material; and
the at least one silicon containing material is selected from the group consisting of silicon nitride, silicon oxide, silicon carbide, and combinations thereof;
wherein the polishing composition has a pH of 8 to 12.