IP Library Granted Patent US 10,497,841
Granted Patent B2
US 10,497,841 · App. 16/176,889 · Granted Dec 3, 2019

Quantum dot based color conversion layer in display device

Inventors: Jason Hartlove (Los Altos, CA); Veeral Hardev (Redwood City, CA); Shihai Kan (San Jose, CA); Jian Chen (Saratoga, CA); Jay Yamanaga (Campbell, CA); Christian Ippen (Sunnyvale, CA); Wenzhou Guo (San Jose, CA); Charles Hotz (San Rafael, CA); Robert Wilson (Palo Alto, CA)
Assignee: Nanosys, Inc.
H01L33/502B01J13/08C09K11/025C09K11/883H01L27/322H05B33/14H05B33/20B82Y20/00B82Y40/00C01P2004/64H01L2251/5369H01L2933/0083Y10S977/774Y10S977/815Y10S977/824Y10S977/892Y10S977/95Y10S977/952
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Quick Facts
Patent No.
US 10,497,841
App. No.
16/176,889
Granted
Dec 3, 2019
Kind
B2
Abstract

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Claims (28)

1. A method of making a quantum dot film, the method comprising:

forming barrier layer coated quantum dots;

forming a homogenous mixture of the barrier layer quantum dots and a matrix material; and

performing an extrusion process on the homogenous mixture comprising:

introducing the homogenous mixture into a hopper;

extruding a film having the barrier layer coated quantum dots and the matrix material through a slot die; and

passing the extruded film through chill rolls.

2. The method of claim 1 , wherein the matrix material includes an extrudable material.

3. The method of claim 1 , wherein the matrix material includes a polymer plastic film.

4. A method of making a quantum dot film, the method comprising:

forming barrier layer coated quantum dots;

forming a homogenous mixture of the barrier layer quantum dots and a matrix material; and

performing an extrusion process on the homogenous mixture;

wherein the quantum dot film has a thickness in a range from about 70 μm to about 40 μm.

5. The method of claim 4 , wherein the matrix material includes an extrudable material.

6. The method of claim 4 , wherein the matrix material includes a polymer plastic film.

7. A method of making a quantum dot film, the method comprising:

forming barrier layer coated quantum dots;

forming a homogenous mixture of the barrier layer quantum dots and a matrix material; and

performing an extrusion process on the homogenous mixture;

wherein the barrier layer coated quantum dots were formed by a method comprising:

forming a solution of reverse micro-micelles using surfactants;

incorporating quantum dots into the reverse micro-micelles;

individually coating the quantum dots with a barrier layer to form barrier layer coated quantum dots; and

isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer,

wherein the barrier layer coated quantum dots exhibit a quantum yield greater than about 80%.

8. The method of claim 7 , wherein the matrix material includes an extrudable material.

9. The method of claim 7 , wherein the matrix material includes a polymer plastic film.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE ADDRESS OF THE ASSIGNEE TO BE: 2-1-1, NISHI-SHINJUKU SHINJUKU-KU TOKYO, JAPAN 163-0043 PREVIOUSLY RECORDED AT REEL: 065114 FRAME: 0769. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 9, 2023
From: NANOSYS, INC.
To: SHOEI CHEMICAL INC.
Reel/Frame 065271/0540 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2023
From: NANOSYS, INC.
To: SHOEI CHEMICAL INC.
Reel/Frame 065114/0769 →
TERMINATION AND RELEASE OF PATENT SECURITY AGREEMENT RECORDED AT REEL 059569 / FRAME 0840 Recorded Sep 7, 2023
From: FORTRESS CREDIT CORP.,
To: NANOSYS, INC.
Reel/Frame 064836/0263 →
SECURITY INTEREST Recorded Apr 1, 2022
From: NANOSYS, INC.
To: FORTRESS CREDIT CORP., AS AGENT
Reel/Frame 059569/0840 →
RELEASE OF SECURITY INTEREST IN INTELLECTUAL PROPERTY COLLATERAL AT REEL/FRAME NO. 49170/0482 Recorded Jul 1, 2021
From: OCEAN II PLO, LLC, AS AGENT
To: NANOSYS, INC.
Reel/Frame 056752/0073 →
SECURITY INTEREST Recorded Jan 17, 2019
From: NANOSYS, INC.
To: OCEAN II PLO, LLC
Reel/Frame 049170/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2018
From: CHEN, JIAN; HARTLOVE, JASON; HARDEV, VEERAL; KAN, SHIHAI; YAMANAGA, JAY; IPPEN, CHRISTIAN; GUO, WENZHUO; HOTZ, CHARLES; WILSON, ROBERT
To: NANOSYS, INC.
Reel/Frame 047651/0211 →