Method and system for a focused field avalanche photodiode
Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.
1. A method for communication, the method comprising:
in an avalanche photodiode formed in a silicon layer of a silicon-on-insulator (SOI) substrate, the avalanche photodiode comprising an absorbing region of germanium deposited in the silicon layer, the avalanche photodiode further comprising an anode, a cathode, an N-doped region, a P-doped charge region that extends beneath the absorbing region, and a multiplication region that are defined in silicon of the silicon layer, wherein the multiplication region is arranged between the N-doped region and the P-doped charge region, wherein oxide interfaces are at opposing surfaces above and below the silicon layer and contact the anode and the cathode:
absorbing a received optical signal in the absorbing region to generate carriers; and
directing the carriers through the P-doped charge region, the multiplication region, and the N-doped region toward a center of the cathode defined along a height of the silicon layer between the opposing surfaces using doping profiles in the N-doped region and the P-doped charge region that vary along the height.
2. The method according to claim 1 , wherein the doping profiles in the N-doped region and the P-doped charge region have a peak concentration at a center height of the silicon layer.
3. The method according to claim 1 , wherein the doping profile in the N-doped region has a peak concentration at the center height, and wherein the doping profile in the P-doped charge region has a minimum concentration at the center height.
4. The method according to claim 1 , wherein the avalanche photodiode comprises a waveguide photodiode.
5. The method according to claim 1 , wherein the P-doped charge region directly contacts the multiplication region and lateral and bottom surfaces of the absorbing region.
6. The method according to claim 5 , wherein the P-doped charge region also directly contacts a lateral surface of an intrinsic or lightly doped layer that is arranged below the absorbing region.
7. The method according to claim 1 , further comprising:
multiplying the carriers through impact ionization that is centered at a center height of the silicon layer.
8. An apparatus comprising:
an avalanche photodiode formed in a silicon layer of a silicon-on-insulator (SOI) substrate, the avalanche photodiode comprising:
an absorbing region of germanium deposited in the silicon layer; and
an anode, a cathode, an N-doped region, a P-doped charge region that extends beneath the absorbing region, and a multiplication region that are defined in silicon of the silicon layer, wherein the multiplication region is arranged between the N-doped region and the P-doped charge region;
a first oxide layer contacting a top surface of the silicon layer, wherein the first oxide layer contacts the anode and the cathode; and
a second oxide layer contacting a bottom surface of the silicon layer, wherein the second oxide layer contacts the anode and the cathode,
wherein doping profiles in the N-doped region and the P-doped charge region vary along a height of the silicon layer between the top surface and the bottom surface, and
wherein, as carriers are directed through the P-doped charge region, the multiplication region, and the N-doped region toward the cathode, the doping profiles direct the carriers toward a center of the cathode defined along the height of the silicon layer.
9. The apparatus of claim 8 , wherein the doping profiles in the N-doped region and the P-doped charge region have a peak concentration at a center height of the silicon layer.
10. The apparatus of claim 8 ,
wherein the doping profile in the N-doped region has a peak concentration at the center height, and
wherein the doping profile in the P-doped charge region has a minimum concentration at the center height.
11. The apparatus of claim 8 , wherein the avalanche photodiode comprises a waveguide photodiode.
12. The apparatus of claim 8 ,
wherein the P-doped charge region directly contacts the multiplication region and lateral and bottom surfaces of the absorbing region.
13. The apparatus of claim 12 , wherein the P-doped charge region also directly contacts a lateral surface of an intrinsic or lightly doped layer that is arranged below the absorbing region.
14. The apparatus of claim 8 , wherein the multiplication region is configured to multiply the carriers through impact ionization that is centered at a center height of the silicon layer.