Thin film transistor and display device comprising the same
According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.
1. A thin film transistor comprising:
a gate electrode above an insulating substrate;
a first insulating film on the gate electrode and the insulating substrate;
an oxide semiconductor layer on the first insulating film;
a second insulating film in a region on the oxide semiconductor layer, which corresponds to the gate electrode;
a first protective film on the oxide semiconductor layer and the second insulating film, as an insulating film containing a metal, the first protective film contacting a top surface of the second insulating film across an entirety of the top surface of the second insulating film;
a second protective film on the first protective film;
a third protective film on the second protective film, as an insulating film containing a metal;
an interlayer insulating film on the third protective film;
a pair of electrodes on the interlayer insulating film, and extending through the interlayer insulating film, the third protective film, the second protective film and the first protective film, to electrically connected to the oxide semiconductor layer.
2. The thin film transistor of claim 1 , wherein
the third protective film is thicker than the first protective film.
3. The thin film transistors of claim 1 , wherein
the first protective film and the third protective film include aluminum oxide.
4. The thin film transistor of claim 1 , wherein
the second protective film includes at least one of silicon oxide, silicon nitride or silicon oxynitride.
5. A display device comprising the thin film transistor of claim 1 .
6. The display device of claim 5 , comprising an organic electroluminescence element.
7. The display device of claim 5 , comprising a liquid crystal layer.
8. The thin film transistor of claim 1 , wherein
the second protective film has a thickness greater than that of the third protective film.
9. A thin film transistor comprising:
an oxide semiconductor layer above an insulating substrate;
a first metal oxide layer on the oxide semiconductor layer;
a gate electrode above the insulating substrate;
a first insulating film between the gate electrode and the oxide semiconductor layer;
an inorganic insulating layer on the first metal oxide layer;
a second metal oxide layer on the inorganic insulating layer;
an interlayer insulating film on the second metal oxide layer; and
a pair of electrodes on the interlayer insulating film, and extending through the interlayer insulating film, the second metal oxide layer, the inorganic insulating layer and the first metal oxide layer, to be electrically connected to the oxide semiconductor layer,
wherein
the first metal oxide layer is in contact with the oxide semiconductor layer,
the inorganic insulating layer is in contact with the first metal oxide layer and the second metal oxide layer, and
the pair of electrodes is in contact with the first metal oxide layer, the inorganic insulating layer and the second metal oxide layer.
10. The thin film transistor of claim 9 ,
wherein
the first metal oxide layer is in contact with an upper surface of the oxide semiconductor layer, the first insulating film, and an upper surface of the gate electrode.
11. The thin film transistor of claim 10 , wherein
the first metal oxide layer is in contact with the insulating substrate.
12. The thin film transistor of claim 9 , wherein the gate electrode is between the first metal oxide layer and the oxide semiconductor layer.
13. A thin film transistor comprising:
an oxide semiconductor layer above an insulating substrate;
a first metal oxide layer on the oxide semiconductor layer;
an inorganic insulating layer on the first metal oxide layer;
a second metal oxide layer on the inorganic insulating layer;
an interlayer insulating film on the second metal oxide layer;
a pair of electrodes on the interlayer insulating film, and extending through the interlayer insulating film, the second metal oxide layer, the inorganic insulating layer and the first metal oxide layer, to be electrically connected to the oxide semiconductor layer;
a gate electrode between the oxide semiconductor layer and the insulating substrate;
a first insulating film between the gate electrode and the oxide semiconductor layer; and
a second insulating film above the gate electrode and between the oxide semiconductor layer and the first metal oxide layer,
wherein
the inorganic insulating layer is in contact with the first metal oxide layer and the second metal oxide layer,
the pair of electrodes is in contact with the first metal oxide layer, the inorganic insulating layer, and the second metal oxide layer,
the first insulating film is in contact with the insulating substrate and an upper surface of the gate electrode, and
the first metal oxide layer is in contact with an upper surface of the oxide semiconductor layer and an upper surface of the second insulating film.
14. A display device of claim 13 , wherein
the first metal oxide layer is in contact with the first insulating film.