Fabrication of correlated electron material devices method to control carbon
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
1. A film deposited on a substrate, comprising:
a correlated electron material comprising a carbon-based material as an electron back-donating material, in an atomic concentration of carbon between 0.1% and 10.0%, the film having an approximate thickness of between 1.5 nm and 150.0 nm and exhibiting a ratio of a first resistance state to a second resistance state of at least 5.0:1.0 when a voltage of between of 0.1 V and 10.0 V is applied across a thickness dimension of the film.
2. The film according to claim 1 , wherein the correlated electron material comprises a thickness of between 10.0 nm and 50.0 nm and exhibits a ratio of a first resistance state to a second resistance state of at least 5.0:1.0 when a voltage of between 0.6 V and 1.5 V is applied across a thickness dimension of the film.
3. The film according to claim 1 , wherein the correlated electron material comprises between 10 and 1000 atom layers.
4. The film according to claim 1 , wherein the carbon-based material provides for p-type doping of the correlated electron material film.
5. The film according to claim 1 , wherein the correlated electron material film comprises a switching region of correlated electron material disposed between a first relatively conductive region of correlated electron material and a second relatively conductive region of correlated electron material.
6. The film according to claim 5 , wherein the switching region has an atomic concentration of carbon less than that of each of the first and the second relatively conductive regions.
7. The film according to claim 5 , wherein the switching region exhibits a first impedance state and the conductive regions exhibit a second impedance state, and wherein the first impedance state and the second impedance are substantially dissimilar from one another.
8. The film according to claim 1 , wherein the correlated electron material film comprises a transition metal or a transition metal oxide.
9. The film according to claim 1 , wherein the correlated electron material film comprises at least one first atom layer of correlated electron material interspersed between at least two second atom layers of correlated electron material, and wherein the at least one first atom layer of correlated electron material comprises a transition metal or a transition metal oxide which is different from that of the correlated electron material of the at least two second atom layers.
10. The film according to claim 1 , wherein the correlated electron material comprises nickel oxide and the carbon-based material comprises carbonyl ligand.
11. A switching device, comprising:
a correlated electron material film comprising a carbon-based material as an electron back-donating material in an atomic concentration of carbon of between 0.1% and 10.0%, the correlated electron material film being disposed between two or more conductive electrodes, the correlated electron material having a thickness of between 1.0 nm and 150.0 nm and exhibiting a ratio of a first resistance state relative to a second resistance state of at least 5.0:1.0 when a voltage of between 0.1 V and 10.0 V is applied across at least two of the two or more conductive electrodes.
12. The switching device according to claim 11 , wherein the correlated electron material film comprises a thickness of between 10.0 nm and 50.0 nm and exhibits a ratio of a first resistance state relative to a second resistance state of at least 5.0:1.0 when a voltage of between 0.6 V and 1.5 V is applied across at least two of the two or more conductive electrodes.
13. The switching device according to claim 11 , wherein one or more of the conductive electrodes comprise titanium nitride, platinum, titanium, copper, aluminum, cobalt, nickel, tungsten, tungsten nitride, cobalt silicide, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver or iridium, or any combination thereof.
14. The switching device according to claim 11 , wherein the carbon-based material provides for p-type doping of the correlated electron material film.
15. The switching device according to claim 11 , wherein the correlated electron material film comprises a switching region of correlated electron material disposed between a first relatively conductive region of correlated electron material and a second relatively conductive region of correlated electron material.
16. The switching device according to claim 15 , wherein the switching region has an atomic concentration of carbon less than that of each of the first and the second relatively conductive regions.
17. The switching device according to claim 15 , wherein the switching region exhibits a first impedance state and the conductive regions exhibit a second impedance state, and wherein the first impedance state and the second impedance are substantially dissimilar from one another.
18. The switching device according to claim 11 , wherein the correlated electron material film comprises a transition metal or a transition metal oxide.
19. The switching device according to claim 11 , wherein the correlated electron material film comprises at least one first atom layer of correlated electron material interspersed between at least two second atom layers of correlated electron material, and wherein the at least one first atom layer of correlated electron material comprises a transition metal or a transition metal oxide which is different from that of the correlated electron material of the at least two second atom layers.
20. The switching device according to claim 11 , wherein the correlated electron material film comprises nickel oxide and the carbon-based material comprises carbonyl ligand.