Semiconductor device and manufacturing method of the same
A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate. The transistor section has gate trench portions which are provided from an upper surface of the semiconductor substrate to a position deeper than that of an emitter region, and to each of which a gate potential is applied. An upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate in the diode section and a partial region of the boundary section, and is not provided in a region that is overlapped with the gate trench portion in the transistor section in a surface parallel to the upper surface of the semiconductor substrate.
1. A semiconductor device comprising:
a semiconductor substrate;
a transistor section, provided in the semiconductor substrate, having an emitter region of a first conductivity type on an upper surface side of the semiconductor substrate, and having a collector region of a second conductivity type in an lower surface side of the semiconductor substrate;
a diode section provided in the semiconductor substrate to have a cathode region of the first conductivity type on the lower surface side of the semiconductor substrate; and
a boundary section provided between the transistor section and the diode section in the semiconductor substrate to have the collector region on a back surface side of the semiconductor substrate, not having the emitter region on the upper surface side of the semiconductor substrate,
wherein the transistor section has one or more gate trench portions which are provided from an upper surface of the semiconductor substrate to a position deeper than the emitter region, and to each of which a gate potential is applied, and
an upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate in the diode section and a partial region of the boundary section, and any upper-surface-side lifetime reduction region is not provided in a region that is overlapped with the one or more gate trench portion in the transistor section in a surface parallel to the upper surface of the semiconductor substrate,
wherein
the transistor section and the diode section are arranged alternately on the upper surface of the semiconductor substrate along a predetermined array direction, and
an end portion of the upper-surface-side lifetime reduction region in the array direction is arranged nearer to the diode section than the gate trench portion in the transistor section that is arranged nearest to the diode section, and arranged nearer to the transistor section than the cathode region.
2. The semiconductor device according to claim 1 , wherein
the upper-surface-side lifetime reduction region is not provided in a region that is overlapped with the transistor section in a surface parallel to the upper surface of the semiconductor substrate.
3. The semiconductor device according to claim 1 , wherein each of the diode section and the boundary section have one or more dummy trench portions provided from the upper surface of the semiconductor substrate to an inside of the semiconductor substrate to be applied by a potential different from that of the gate potential.
4. The semiconductor device according to claim 3 , wherein
the semiconductor substrate has a plurality of mesa portions, each of which is sandwiched between two trench portions, and
the boundary section has the upper-surface-side lifetime reduction region in at least one of the plurality of mesa portions and does not have the upper-surface-side lifetime reduction region in at least another one of the plurality of mesa portions.
5. The semiconductor device according to claim 3 , wherein
the upper-surface-side lifetime reduction region is provided to cover a region wider than the cathode region of the diode section in a surface parallel to the upper surface of the semiconductor substrate.
6. The semiconductor device according to claim 3 , wherein the diode section has a base region of the second conductivity type that is provided to be exposed on the upper surface of the semiconductor substrate in a region sandwiched between the dummy trench portions, and
the upper-surface-side lifetime reduction region is provided to cover a region wider than the base region in the diode section in a surface parallel to the upper surface of the semiconductor substrate.
7. The semiconductor device according to claim 6 , further comprising:
a well region of the second conductivity type provided inside the semiconductor substrate in an outer side than the base region of the dummy trench portion in a longitudinal direction, and wherein
a region provided with the upper-surface-side lifetime reduction region has a portion to be overlapped with the well region in a surface parallel to the upper surface of the semiconductor substrate.
8. The semiconductor device according to claim 7 , further comprising:
a gate runner portion provided on the upper surface of the semiconductor substrate in an outer side than the base region in the longitudinal direction of the dummy trench portion, and formed of a semiconductor material added with an impurity, wherein
the region provided with the upper-surface-side lifetime reduction region is not overlapped with the gate runner portion in a surface parallel to the upper surface of the semiconductor substrate.
9. The semiconductor device according to claim 8 , wherein
the upper-surface-side lifetime reduction region is also provided in a region between the gate runner portion and an outer peripheral edge of the semiconductor substrate in a surface parallel to the upper surface of the semiconductor substrate.
10. The semiconductor device according to claim 1 , further comprising:
an emitter electrode provided over the upper surface of the semiconductor substrate; and
a protective film of which at least a part is provided over the emitter electrode, wherein
the cathode region is not overlapped with the protective film in a surface parallel to the upper surface of the semiconductor substrate.
11. The semiconductor device according to claim 1 , further comprising:
an emitter electrode provided over the upper surface of the semiconductor substrate; and
a protective film of which at least a part is provided over the emitter electrode, wherein
the upper-surface-side lifetime reduction region is not overlapped with the protective film in a surface parallel to the upper surface of the semiconductor substrate.
12. The semiconductor device according to claim 1 , wherein the diode section is arranged to be surrounded by the boundary section,
the boundary section is arranged to be surrounded by the transistor section, and
the upper-surface-side lifetime reduction region is arranged to be overlapped with the whole of the diode section and the boundary section.
13. The semiconductor device according to claim 1 , wherein the transistor section have one or more dummy trench portions provided from the upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and applied by a potential different from that of the gate potential, and
the upper-surface-side lifetime reduction region is arranged to be overlapped with at least one dummy trench portion in the transistor section, and not overlapped with the two gate trench portions that sandwich the dummy trench portion.
14. The semiconductor device according to claim 1 ,
wherein
the transistor section has a plurality of mesa portions, each of which is sandwiched between two trench portions, and
the upper-surface-side lifetime reduction region is arranged to be overlapped with at least one mesa portion in the transistor section, and not overlapped with the two trench portions that sandwich the mesa portion.
15. A semiconductor device comprising:
a semiconductor substrate;
a transistor section provided in the semiconductor substrate to have an emitter region of a first conductivity type on an upper surface side of the semiconductor substrate, and to have a collector region of a second conductivity type in an lower surface side of the semiconductor substrate;
a diode section provided in the semiconductor substrate to have a cathode region of the first conductivity type on the lower surface side of the semiconductor substrate;
an emitter electrode provided over an upper surface of the semiconductor substrate; and
a protective film provided only over the emitter electrode, wherein
the cathode region is not overlapped with any protective film in a surface parallel to the upper surface of the semiconductor substrate,
at the diode section, an upper-surface-side lifetime reduction region is provided on the upper surface side of the semiconductor substrate, and
in a surface parallel to the upper surface of the semiconductor substrate, the upper-surface-side lifetime reduction region is overlapped with the whole cathode region, and not overlapped with the protective film.
16. The semiconductor device according to claim 15 , wherein
in the surface parallel to the upper surface of the semiconductor substrate, a distance between the protective film and the upper-surface-side lifetime reduction region is equal to or longer than 10 μm.
17. The semiconductor device according to claim 15 , further comprising:
in the surface parallel to the upper surface of the semiconductor substrate, a gate runner portion arranged between element regions each including at least one of the transistor section and the diode section, wherein
the protective film is also provided over the gate runner portion, and
in the surface parallel to the upper surface of the semiconductor substrate, the upper-surface-side lifetime reduction region is not overlapped with the protective film over the gate runner portion.