IP Library Granted Patent US 10,615,359
Granted Patent B2
US 10,615,359 · App. 16/203,462 · Granted Apr 7, 2020

Organic light-emitting display panel and device

Inventors: Xiangcheng Wang (Shanghai, CN); Jinghua Niu (Shanghai, CN); Yuji Hamada (Shanghai, CN); Wei He (Shanghai, CN); Wanming Hua (Shanghai, CN); Shuang Cheng (Shanghai, CN)
Assignee: SHANGHAI TIANMA AM-OLED CO., LTD.
H01L51/5064H01L51/506H01L51/5076H01L51/5206H01L51/5221H01L2251/5353H01L2251/552H01L2251/558
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Quick Facts
Patent No.
US 10,615,359
App. No.
16/203,462
Granted
Apr 7, 2020
Kind
B2
Abstract

Disclosed are an organic light-emitting display panel and an organic light-emitting display device. The organic light-emitting display panel comprises: a substrate, a second electrode, a light-emitting layer, a first hole transport layer and a first electrode that are successively laminated, wherein, the materials of both the first electrode and the second electrode are silver or silver-containing metallic materials, the material of the first hole transport layer is a conductive material doped with a P-type semiconductor material or a P-type semiconductor material layer is set between the first hole transport layer and the first electrode.

Claims (57)

1. An organic light-emitting display panel, comprising:

a substrate, a second electrode, a light-emitting layer, a first hole transport layer, a first electrode and an optical coupling layer, wherein the substrate, the second electrode, the light-emitting layer, the first hole transport layer and the first electrode are successively laminated;

wherein the first electrode and the second electrode are both made of silver or silver-containing metallic materials;

wherein the first hole transport layer is made of a conductive material doped with a P-type semiconductor material;

wherein at least one of the first electrode and the second electrode is an emergent light side electrode of the organic light-emitting display panel; and

wherein the optical coupling layer is located on one side of the emergent light side electrode of the organic light-emitting display panel that is facing away from the light-emitting layer;

wherein the organic light-emitting display panel further comprises:

an electron transport layer, located between the second electrode and the light-emitting layer; a second hole transport layer, located between the first hole transport layer and the light-emitting layer; and at least one of an electron blocking layer, a hole injection layer, an electron injection layer and a hole blocking layer;

wherein the electron blocking layer is located between the light-emitting layer and the second hole transport layer;

wherein the hole injection layer is located between the first hole transport layer and the first electrode;

wherein the electron injection layer is located between the electron transport layer and the second electrode; and

wherein the hole blocking layer is located between the electron transport layer and the light-emitting layer.

2. The organic light-emitting display panel as claimed in claim 1 , wherein

a mass percent of the P-type semiconductor material in the first hole transport layer ranges from 1% to 10%.

3. The organic light-emitting display panel as in claim 1 , wherein

a lowest unoccupied molecular orbital energy level of the P-type semiconductor material is less than −5 eV.

4. The organic light-emitting display panel as in claim 1 , wherein

a thickness of the first hole transport layer is ranges from 50 Å to 300 Å.

5. The organic light-emitting display panel as in claim 1 , wherein

the electron transport layer is doped with at least one of an alkali metal, an alkaline earth metal and a rare earth metal.

6. The organic light-emitting display panel as in claim 5 , wherein

the electron transport layer is doped with at least one of lithium, cesium and ytterbium.

7. The organic light-emitting display panel as in claim 5 , wherein

a mass percent of the metal doped in the electron transport layer ranges from 5% to 50%.

8. The organic light-emitting display panel as in claim 1 , wherein

the thickness of the electron transport layer is greater than 200 Å.

9. The organic light-emitting display panel as in claim 1 , wherein

at least one of the first electrode and the second electrode is made of a silver-magnesium alloy or a silver-ytterbium alloy.

10. The organic light-emitting display panel as in claim 9 , wherein

a mass percent of silver in at least one of the first electrode and the second electrode is greater than or equal to 10%.

11. The organic light-emitting display panel as in claim 1 , wherein

a thickness of the emergent light side electrode is less than 30 nm.

12. An organic light-emitting display panel, comprising:

a substrate, a second electrode, a light-emitting layer, a first hole transport layer, a first electrode and an optical coupling layer, wherein the substrate, the second electrode, the light-emitting layer, the first hole transport layer and the first electrode are successively laminated;

wherein the first electrode and the second electrode are both made of silver or silver-containing metallic materials; and

wherein a P-type semiconductor material layer is provided between the first hole transport layer and the first electrode;

wherein at least one of the first electrode and the second electrode is an emergent light side electrode of the organic light-emitting display panel;

wherein the optical coupling layer is located on one side of the emergent light side electrode of the organic light-emitting display panel that is facing away from the light-emitting layer;

wherein the organic light-emitting display panel further comprises:

an electron transport layer, located between the second electrode and the light-emitting layer; a second hole transport layer, located between the first hole transport layer and the light-emitting layer; and at least one of an electron blocking layer, a hole injection layer, an electron injection layer and a hole blocking layer;

wherein the electron blocking layer is located between the light-emitting layer and the second hole transport layer;

wherein the hole injection layer is located between the first hole transport layer and the first electrode;

wherein the electron injection layer is located between the electron transport layer and the second electrode; and

wherein the hole blocking layer is located between the electron transport layer and the light-emitting layer.

13. The organic light-emitting display panel as in claim 12 , wherein a thickness of the emergent light side electrode is less than 30 nm.

14. An organic light-emitting display device, comprising an organic light-emitting display panel comprising:

a substrate, a second electrode, a light-emitting layer, a first hole transport layer, a first electrode and an optical coupling layer, wherein the substrate, the second electrode, the light-emitting layer, the first hole transport layer and the first electrode are successively laminated;

wherein the first electrode and the second electrode are both made of silver or silver-containing metallic materials;

wherein the first hole transport layer is made of a conductive material doped with a P-type semiconductor material, or wherein a P-type semiconductor material layer is provided between the first hole transport layer and the first electrode;

wherein at least one of the first electrode and the second electrode is an emergent light side electrode of the organic light-emitting display panel; and

wherein the optical coupling layer is located on one side of the emergent light side electrode of the organic light-emitting display panel that is facing away from the light-emitting layer;

wherein the organic light-emitting display panel further comprises:

an electron transport layer, located between the second electrode and the light-emitting layer; a second hole transport layer, located between the first hole transport layer and the light-emitting layer; and at least one of an electron blocking layer, a hole injection layer, an electron injection layer and a hole blocking layer;

wherein the electron blocking layer is located between the light-emitting layer and the second hole transport layer;

wherein the hole injection layer is located between the first hole transport layer and the first electrode;

wherein the electron injection layer is located between the electron transport layer and the second electrode; and

wherein the hole blocking layer is located between the electron transport layer and the light-emitting layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2022
From: SHANGHAI TIANMA AM-OLED CO.,LTD.
To: WUHAN TIANMA MICRO-ELECTRONICS CO., LTD.; WUHAN TIANMA MICROELECTRONICS CO., LTD. SHANGHAI BRANCH
Reel/Frame 059498/0307 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2018
From: WANG, XIANGCHENG; NIU, JINGHUA; HAMADA, YUJI; HE, WEI; HUA, WANMING; CHENG, SHUANG
To: SHANGHAI TIANMA AM-OLED CO., LTD.
Reel/Frame 047629/0001 →
Priority Claims (1)
CN 2017 1 0028398 · Jan 16, 2017 · national
Continuity (2)
Continuation 15717798 · Sep 27, 2017
Related Publication 20190109292A1 · Apr 11, 2019