Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
1. A multilayer plate assembly for use in semiconductor processing, said multilayer plate assembly comprising:
an upper plate layer, said upper plate layer comprising ceramic;
a lower plate layer, said lower plate layer comprising ceramic; and
an annular brazing layer disposed between said upper plate layer and said lower plate layer between an outer periphery of said upper plate layer and said lower plate layer thereby defining an inner space between said upper plate layer and said lower plate layer within said annular brazing layer, wherein said annular brazing layer hermetically seals said inner space from an area outside of said annular brazing layer across a joint, and wherein said annular brazing layer consists of a nickel alloy with an alloying element selected from the group consisting of aluminum, titanium, silicon, and chromium.
2. The multilayer plate assembly of claim 1 , wherein said upper plate layer and said lower plate layer comprise aluminum nitride.
3. The multilayer plate assembly of claim 2 , wherein said alloying element is aluminum in the range of 1.5 to 7 weight percent aluminum.
4. The multilayer plate assembly of claim 2 , wherein said alloying element is silicon in the range of 1 to 9 weight percent silicon.
5. The multilayer plate assembly of claim 1 , wherein said alloying element is chromium in the range of 1.0 to 10.0 weight percent chromium.
6. The multilayer plate assembly of claim 3 further comprising an electrode between said upper plate layer and said lower plate layer, wherein said electrode is comprised of the same material as said annular brazing layer.
7. The multilayer plate assembly of claim 1 further comprising an electrode between said upper plate layer and said lower plate layer, wherein said electrode is comprised of the same material as said annular brazing layer.
8. The multilayer plate assembly of claim 4 further comprising an electrode between said upper plate layer and said lower plate layer, wherein said electrode is comprised of the same material as said annular brazing layer.
9. The multilayer plate assembly of claim 5 further comprising an electrode between said upper plate layer and said lower plate layer, wherein said electrode is comprised of the same material as said annular brazing layer.
10. The multilayer plate assembly of claim 6 wherein said annular brazing layer is an annular ring around the outer periphery of said electrode.
11. The multilayer plate assembly of claim 7 wherein said annular brazing layer is an annular ring around the outer periphery of said upper plate layer and said lower plate layer.
12. The multilayer plate assembly of claim 8 , wherein said annular brazing layer is an annular ring around the outer periphery of said upper plate layer and said lower plate layer.
13. The multilayer plate assembly of claim 9 , wherein said annular brazing layer is an annular ring around the outer periphery of said upper plate layer and said lower plate layer.