Vertical cavity surface emitting laser
A vertical cavity surface emitting laser (VCSEL) is formed on a substrate. The VCSEL includes a layer structure and one or more distributed Bragg reflector (DBR) mirrors formed on at least one of the layer structure or the substrate. The layer structure generates an optical signal at a first wavelength based on a control current received from a transistor that is formed on the substrate. Rare earth ions (REIs) are deposited in the one or more DBR mirrors such that the one or more DBR mirrors receive the optical signal at the first wavelength and generate the optical signal at a second wavelength.
1. A device comprising:
a light emitting device disposed between first and second distributed Bragg reflector (DBR) mirrors,
wherein at least one of the first and second DBR mirrors comprises a plurality of rare earth elements incorporated therein,
wherein the plurality of rare earth elements comprises semiconductor nanoparticles.
2. The device of claim 1 ,
wherein the first and second DBR mirrors each comprise the plurality of rare earth elements.
3. The device of claim 1 ,
wherein the at least one of the first and second DBR mirrors comprises a stack of layers having different refractive indexes, and
wherein at least one or more layers of the stack of layers comprises the plurality of rare earth elements.
4. The device of claim 1 ,
wherein the incorporation of the plurality of rare earth elements into the at least one of the first and second DBR mirrors is configured so that the at least one of the first and second DBR mirrors, upon exposure to a first optical signal emitted from the light emitting device, provides a second optical signal at a longer wavelength than a wavelength of the first optical signal.
5. The device of claim 1 ,
wherein the incorporation of the plurality of rare earth elements into the at least one of the first and second DBR mirrors is configured so that the at least one of the first and second DBR mirrors, upon exposure to a first optical signal emitted from the light emitting device, provides a second optical signal at a shorter wavelength than a wavelength of the first optical signal.
6. A device comprising:
a first distributed Bragg reflector (DBR) mirror disposed on a substrate;
a layer structure disposed on the first DBR mirror,
wherein the layer structure is configured to emit a first optical signal at a first wavelength; and
a second DBR mirror disposed on the layer structure,
wherein at least one of the first and second DBR mirrors comprises a plurality of elements incorporated therein, and
wherein the incorporation of the plurality of elements into the at least one of the first and second DBR mirrors is configured so that the at least one of the first and second DBR mirrors, upon exposure to the first optical signal, provides a second optical signal at a second wavelength different from the first wavelength, and
wherein the plurality of elements comprises rare earth elements, and
wherein the plurality of elements comprises semiconductor nanoparticles.
7. The device of claim 6 ,
wherein the at least one of the first and second DBR mirrors comprises the first DBR mirror.
8. The device of claim 6 ,
wherein the at least one of the first and second DBR mirrors comprises the first and second DBR mirrors.
9. The device of claim 6 ,
wherein the at least one of the first and second DBR mirrors comprises a stack of repeated layers having different refractive indexes, and
wherein at least one or more layers of the repeated layers comprise the plurality of elements.
10. The device of claim 6 ,
wherein the at least one of the first and second DBR mirrors comprises a stack of repeated layers having different refractive indexes, and
wherein at least one or more alternate layers of the repeated layers comprise the plurality of elements.
11. The device of claim 6 ,
wherein the device is configured to form a part of at least one of a thyristor vertical cavity surface emitting laser, an asymmetric thyristor vertical cavity surface emitting laser, or a bipolar inversion channel field effect transistor vertical cavity surface emitting laser.
12. The light emitting device of claim 11 , wherein the at least one of the first and second DBR mirrors comprises the first DBR mirror, the second DBR mirror, or the first and second DBR mirrors.
13. The light emitting device of claim 11 , wherein the at least one of the first and second DBR mirrors is configured to perform up-conversion or down-conversion on the first optical signal.
14. The light emitting device of claim 11 , wherein the at least one of the first and second DBR mirrors comprises a stack of layers having different refractive indexes, and
wherein at least one or more layers of the stack of layers comprise the plurality of rare earth elements.
15. The light emitting device of claim 11 , wherein the at least one of the first and second DBR mirrors comprises a stack of layers having different refractive indexes, and
wherein at least one or more alternate layers of the stack of layers comprise the plurality of rare earth elements.
16. The light emitting device of claim 11 , wherein the layer structure comprises a second transistor configured to emit the first optical signal, and
wherein the first and second transistors comprise a similar structure.
17. The device of claim 6 , further comprising a transistor disposed on the substrate,
wherein the device is coupled to the transistor for receiving a current to drive or to control the device.
18. A light emitting device, comprising:
an array of pixels formed on a substrate,
wherein each pixel of the array of pixels includes a first transistor and at least one optical emitter, and
wherein the at least one optical emitter comprises:
a first distributed Bragg reflector (DBR) mirror disposed on the substrate; and
a layer structure disposed on the first DBR mirror,
wherein the layer structure is configured to emit a first optical signal at a first wavelength; and
a second DBR mirror disposed on the layer structure,
wherein at least one of the first and second DBR mirrors comprises a plurality of rare earth elements configured to, upon exposure to the first optical signal, provide a second optical signal at a second wavelength that is different from the first wavelength; and
wherein the plurality of rare earth elements comprises semiconductor nanoparticles.