Method and system for a vertical junction high-speed phase modulator
Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.
1. A semiconductor device, the device comprising:
a semiconductor waveguide comprising a slab section, a rib section extending in a first direction above the slab section, wherein the rib section is one of fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide in a second direction perpendicular to the first direction, and raised ridges extending in the first direction above the slab section on both sides of the rib section;
a pn junction defined at an interface between the slab section and the rib section in a first plane that is perpendicular to the first direction, the pn junction including p-doped material and n-doped material arranged with respect to each other on opposite sides of the first plane in the rib and slab sections, respectively, wherein the rib section is one of fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide;
electrical contact to the p-doped material and n-doped material via contacts on the raised ridges; and
electrical contact to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide where a cross-section, made in a second plane perpendicular to the first plane, of both the rib section and the slab section in the periodically arranged sections is mostly n-doped with an undoped portion or is mostly p-doped with an undoped portion.
2. The device according to claim 1 , wherein the rib section is fully n-doped or fully p-doped along a full length of the semiconductor waveguide.
3. The device according to claim 1 , wherein the rib section alternates between fully p-doped or fully n-doped in sections along a full length of the semiconductor waveguide.
4. The device according to claim 1 , wherein the slab section alternates between fully p-doped and undoped or fully n-doped and undoped in sections along a full length of the semiconductor waveguide.
5. The device according to claim 1 , wherein the slab section is undoped along a full length of the semiconductor waveguide except for in the periodically arranged sections.
6. The device according to claim 1 , wherein the raised ridges are separated from the rib by trenches.
7. The device according to claim 1 , wherein p-doped material in the slab section under the rib section where the rib section is n-doped is doped less p-type than elsewhere in the p-doped material in the slab section.
8. The device according to claim 1 , wherein the semiconductor waveguide comprises a first phase modulation section of an optical modulator.
9. The device according to claim 1 , wherein the semiconductor waveguide comprises silicon.
10. The device according to claim 1 , wherein the semiconductor waveguide is integrated in a complementary metal-oxide semiconductor (CMOS) die.