IP Library Granted Patent US 10,871,916
Granted Patent B2
US 10,871,916 · App. 16/207,375 · Granted Dec 22, 2020

Memory controller and method of operating the same

Inventor: Young Kyun Shin (Seoul, KR)
Assignee: SK hynix Inc.
G06F3/0655G06F3/0604G06F3/0616G06F3/0679G11C16/0483
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Quick Facts
Patent No.
US 10,871,916
App. No.
16/207,375
Granted
Dec 22, 2020
Kind
B2
Abstract

Provided herein may be a memory controller and a method of operating the same. The memory controller may control a memory device in response to a command received from a host. The memory controller may include a write amplification factor (WAF) storage and a standby state controller. The WAF storage may store a WAF of the memory device. The standby state controller may control entry of the memory controller into a standby state based on a value of the WAF stored in the WAF storage.

Claims (44)

1. A memory controller for controlling a memory device in response to a command received from a host, the memory controller comprising:

a write amplification factor (WAF) storage configured to store a WAF of the memory device; and

a standby state controller configured to control entry of the memory controller into a standby state based on a value of the WAF stored in the WAF storage.

2. The memory controller according to claim 1 , wherein the standby state controller compares the value of the WAF with a standby-prevention threshold value, and controls entry of the memory controller into the standby state based on a result of the comparison.

3. The memory controller according to claim 2 , wherein the standby state controller determines an operating mode of the memory controller as any one of a normal mode and a standby-prevention mode based on the result of the comparison.

4. The memory controller according to claim 3 , wherein the standby state controller is configured to:

when the value of the WAF is greater than the standby-prevention threshold value, control the memory controller so that the memory controller operates in the standby-prevention mode, and

when the value of the WAF is less than or equal to the standby-prevention threshold value, control the memory controller so that the memory controller operates in the normal mode.

5. The memory controller according to claim 3 , wherein the memory controller enters the standby state at a lower frequency in the standby-prevention mode than that in the normal mode.

6. The memory controller according to claim 5 , wherein:

the standby state controller determines whether to enter the standby state based on a remaining power capacity of a power source for supplying power to the memory controller,

in the normal mode, the standby state controller controls the memory controller so that, when the remaining power capacity of the power source is less than a first level, the memory controller enters the standby state,

in the standby-prevention mode, the standby state controller controls the memory controller so that, when the remaining power capacity of the power source is less than a second level, the memory controller enters the standby state, and

the second level is less than the first level.

7. The memory controller according to claim 5 , wherein:

the standby state controller determines whether to enter the standby state, based on a waiting period measured from a time at which a command is last-received from the host,

in the normal mode, the standby state controller controls the memory controller so that, when the waiting period is longer than a first period, the memory controller enters the standby state,

in the standby-prevention mode, the standby state controller controls the memory controller so that, when the waiting period is longer than a second period, the memory controller enters the standby state, and

the second period is longer than the first period.

8. The memory controller according to claim 3 , wherein the memory controller is prevented from entering the standby state in the standby-prevention mode.

9. A method of operating a memory controller, the memory controller controlling an operation of a memory system including at least one memory device, the method comprising:

determining a write amplification factor (WAF) of the memory system;

comparing a value of the WAF with a standby-prevention threshold value; and

controlling entry of the memory system into a standby state based on a result of the comparison.

10. The method according to claim 9 , wherein controlling entry of the memory system into the standby state based on the result of the comparison comprises controlling the memory system so that the memory system operates in any one of a normal mode and a standby-prevention mode based on relative magnitudes of the value of the WAF and the standby-prevention threshold value.

11. The method according to claim 10 , wherein controlling entry of the memory system into the standby state based on the result of the comparison comprises:

when the value of the WAF is greater than the standby-prevention threshold value, controlling the memory system so that the memory system operates in the standby-prevention mode, and

when the value of the WAF is less than or equal to the standby-prevention threshold value, controlling the memory system so that the memory system operates in the normal mode.

12. The method according to claim 10 , wherein the memory system enters the standby state at a lower frequency in the standby-prevention mode than that in the normal mode.

13. The method according to claim 12 , wherein controlling entry of the memory system into the standby state comprises:

in the normal mode, when a remaining power capacity of a power source for supplying power to the memory system is less than a first level, controlling the memory system to enter the standby state,

in the standby-prevention mode, when the remaining power capacity of the power source is less than a second level, controlling the memory system to enter the standby state, and

wherein the second level is less than the first level.

14. The method according to claim 12 , wherein controlling entry of the memory system into the standby state comprises:

in the normal mode, when a waiting period measured from a time at which a command is last-received from the host is longer than a first period, controlling the memory system to enter the standby state,

in the standby-prevention mode, when the waiting period is longer than a second period, controlling the memory system to enter the standby state, and

wherein the second period is longer than the first period.

15. The method according to claim 12 , wherein, in the standby-prevention mode, the memory system is prevented from entering the standby state.

16. A memory system comprising:

a memory device; and

a memory controller configured to control the memory device,

wherein the memory controller:

detects a write amplification factor of the memory device; and

controls a frequency or number of times the memory system is permitted to transition from an operation state to a standby state based on the write amplification factor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067335/0246 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2018
From: SHIN, YOUNG KYUN
To: SK HYNIX INC.
Reel/Frame 047653/0028 →
Cited By (1)
US 12,619,365