Semiconductor apparatus and method of manufacturing the same

1. A method for fabricating a semiconductor apparatus, comprising:

forming a dielectric isolation layer on a driver circuit wafer, the driver circuit wafer including a plurality of driver circuits arranged in an array, the dielectric isolation layer including first protrusion structures and second protrusion structures, each one of first protrusion structures being formed over one of the driver circuits and having a through hole formed from an upper surface of the first protrusion structure to a lower surface of the first protrusion structure, and each of the second protrusion structures surrounding one of the first protrusion structures to define a continuous recess surrounding the first protrusion structure;

forming a first pre-bonding metal layer over the driver circuit wafer;

patterning the first pre-bonding metal layer to form a plurality of first pre-bonding metal pads, each one of the first pre-bonding metal pads being arranged over one of the first protrusion structures, and at least a portion of the first pre-bonding metal pad being arranged in the through-hole of the first protrusion structure;

forming a second pre-bonding metal layer over a functional device wafer, the functional device wafer including a functional device epi-structure layer epitaxially grown on a growth substrate;

patterning the second pre-bonding metal layer to form a plurality of second pre-bonding metal pads;

bonding the functional device wafer onto the driver circuit wafer through the first and second pre-bonding metal layers to form a plurality of bonding metal pads; and

removing the growth substrate to expose the functional device epi-structure layer.

2. The method according to claim 1 , wherein bonding the functional device wafer onto the driver circuit wafer includes:

arranging the functional device wafer over the driver circuit wafer so that the first pre-bonding metal pads are aligned with the second pre-bonding metal pads;

pressing the functional device wafer against the driver circuit wafer such that each of the second pre-bonding metal pads contacts one of the first pre-bonding metal pads; and

conducting a bonding process to bond the second pre-bonding metal pads with the first pre-bonding metal pads.

3. The method of claim 2 , further comprising:

patterning, after patterning the second pre-bonding metal layer and before bonding the functional device wafer onto the driver circuit wafer, the functional device epi-structure layer to form a plurality of functional device mesas, the functional device mesas being electrically isolated from each other.

4. The method of claim 2 , further comprising:

patterning, before forming the second pre-bonding metal layer, the functional device epi-structure layer to form a plurality of functional device mesas, the functional device mesas being electrically isolated from each other,

wherein patterning the second pre-bonding metal layer includes patterning the second pre-bonding metal layer such that each of the second pre-bonding metal pads is formed over one of the functional device mesas.

5. The method of claim 1 ,

wherein:

the functional device wafer is a first opto-electronic device wafer,

the functional device epi-structure layer is a first opto-electronic device epi-structure layer associated with a first wavelength, and

the growth substrate is a first growth substrate,

the method further comprising:

forming a third pre-bonding metal layer over the first opto-electronic device epi-structure layer; and

forming a fourth pre-bonding metal layer over a second opto-electronic device wafer, the second opto-electronic device wafer including a second opto-electronic device epi-structure layer epitaxially grown on a second growth substrate and associated with a second wavelength;

wherein the bonding includes bonding the second opto-electronic device wafer onto the first opto-electronic device epi-structure layer through the third and fourth pre-bonding metal layers; and

removing the second growth substrate to expose the second opto-electronic device epi-structure layer.

6. The method of claim 5 , further comprising:

forming a fifth pre-bonding metal layer over the second opto-electronic device epi-structure layer;

forming a sixth pre-bonding metal layer over a third opto-electronic device wafer, the third opto-electronic device wafer including a third opto-electronic device epi-structure layer epitaxially grown on a third growth substrate and associated with a third wavelength;

bonding the third opto-electronic device wafer onto the second opto-electronic device epi-structure layer through the fifth and sixth pre-bonding metal layers; and

removing the third growth substrate to expose the third opto-electronic device epi-structure layer.